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IRLML6402
+BOM20V 3.7A 1.3W [email protected],3.7A 950
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メーカーUMW社
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メーカー品番 #IRLML6402
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データシート IRLML6402 DataSheet
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在庫状況18521
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Series | UMW |
| PartStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 20 V |
| Current-ContinuousDrain(Id)@25°C | 3.7A (Ta) |
| DriveVoltage(MaxRdsOn,MinRdsOn) | 2.5V, 4.5V |
| RdsOn(Max)@Id,Vgs | 65mOhm @ 3.7A, 4.5V |
| Vgs(th)(Max)@Id | 950mV @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 12 nC @ 5 V |
| Vgs(Max) | ±12V |
| InputCapacitance(Ciss)(Max)@Vds | 633 pF @ 10 V |
| PowerDissipation(Max) | 1.3W (Ta) |
| OperatingTemperature | 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-23 |
| Package/Case | TO-236-3, SC-59, SOT-23-3 |
概要
Description
The IRLML6402 is a type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) known for its low on-resistance and high efficiency. This makes it ideal for applications in power management, switching regulators, and DC-DC converters. The device is typically packaged in a small form factor, such as the SO-8 package, which is suitable for space-constrained applications while still providing excellent thermal performance.
Key characteristics include a low gate charge, which improves switching performance, and a high current capacity, often reaching several tens of amps, depending on the specific variant. This MOSFET is designed to operate in environments with a wide range of temperatures, maintaining stability and reliability.
The IRLML6402 is widely used in portable electronics, computing equipment, and automotive applications due to its robust design and energy efficiency. Its ability to handle high frequencies and voltages makes it an essential component in modern electronic circuit design, providing a balance between performance and power consumption.
Key characteristics include a low gate charge, which improves switching performance, and a high current capacity, often reaching several tens of amps, depending on the specific variant. This MOSFET is designed to operate in environments with a wide range of temperatures, maintaining stability and reliability.
The IRLML6402 is widely used in portable electronics, computing equipment, and automotive applications due to its robust design and energy efficiency. Its ability to handle high frequencies and voltages makes it an essential component in modern electronic circuit design, providing a balance between performance and power consumption.
Equivalent
The IRLML6402 is a P-channel MOSFET. Equivalent products include PMV48XP, Si2305, BSS84, and FDN306P. When selecting an equivalent, ensure that the replacement has similar voltage, current, and thermal characteristics to fit your application requirements. Always consult the datasheets for detailed specifications to confirm compatibility.
Features
The IRLML6402 is a P-channel MOSFET known for its compact size and efficient performance, making it suitable for various electronic applications. Here are its key features:
1. Technology: Utilizes TrenchFET technology for enhanced performance.
2. Voltage Rating: The MOSFET has a drain-source voltage (V_DS) rating of -20V.
3. Current Rating: It can handle a continuous drain current (I_D) of -3.7A at 25°C.
4. R_DS(on): Offers low on-state resistance, typically around 0.045Ω at -4.5V gate-source voltage.
5. Package: Comes in a compact SOT-23 package, making it ideal for space-constrained designs.
6. Temperature Range: Operates efficiently within a wide temperature range, from -55°C to +150°C.
7. Applications: Commonly used in load switch applications and DC-DC converters.
These features make the IRLML6402 a reliable choice for designers looking for a small, efficient, and robust P-channel MOSFET for various power management applications.
1. Technology: Utilizes TrenchFET technology for enhanced performance.
2. Voltage Rating: The MOSFET has a drain-source voltage (V_DS) rating of -20V.
3. Current Rating: It can handle a continuous drain current (I_D) of -3.7A at 25°C.
4. R_DS(on): Offers low on-state resistance, typically around 0.045Ω at -4.5V gate-source voltage.
5. Package: Comes in a compact SOT-23 package, making it ideal for space-constrained designs.
6. Temperature Range: Operates efficiently within a wide temperature range, from -55°C to +150°C.
7. Applications: Commonly used in load switch applications and DC-DC converters.
These features make the IRLML6402 a reliable choice for designers looking for a small, efficient, and robust P-channel MOSFET for various power management applications.
Pinout
The IRLML6402 is a P-channel MOSFET transistor. It typically comes in a SOT-23 package, which has three pins. Here is a brief description of its pin configuration and function:
1. Pin 1 (Gate): This is the control pin used to turn the MOSFET on or off. Applying a voltage to the gate relative to the source controls the conductivity between the source and drain.
2. Pin 2 (Source): This is the terminal through which current enters the MOSFET when it is in the "on" state. For a P-channel MOSFET like the IRLML6402, the source is typically connected to a positive voltage supply.
3. Pin 3 (Drain): This is the terminal through which current exits the MOSFET when it is conducting. In the circuit, the load is usually connected to the drain.
The IRLML6402 is used in applications requiring low voltage and high efficiency, such as power management circuits in portable devices. Its low on-resistance and fast switching capabilities make it suitable for such applications.
1. Pin 1 (Gate): This is the control pin used to turn the MOSFET on or off. Applying a voltage to the gate relative to the source controls the conductivity between the source and drain.
2. Pin 2 (Source): This is the terminal through which current enters the MOSFET when it is in the "on" state. For a P-channel MOSFET like the IRLML6402, the source is typically connected to a positive voltage supply.
3. Pin 3 (Drain): This is the terminal through which current exits the MOSFET when it is conducting. In the circuit, the load is usually connected to the drain.
The IRLML6402 is used in applications requiring low voltage and high efficiency, such as power management circuits in portable devices. Its low on-resistance and fast switching capabilities make it suitable for such applications.
Manufacturer
The IRLML6402 is manufactured by Infineon Technologies, a German semiconductor company. Infineon is a key player in the semiconductor industry, known for developing and producing a wide range of semiconductor solutions including microcontrollers, sensors, power semiconductors, and security solutions. The company serves various sectors such as automotive, industrial, and chip card and security industries. Infineon is recognized for its innovation and commitment to providing energy-efficient and sustainable technologies.
Application
The IRLML6402 is a P-channel MOSFET commonly used in applications where efficient power management is crucial. Its application areas include load switching, DC-DC converters, power management in portable devices, and battery-operated equipment. Due to its low on-resistance and compact SOT-23 package, it is ideal for space-constrained designs in consumer electronics, communication devices, and automotive systems. Additionally, it is used in reverse polarity protection circuits, LED drivers, and other applications that require high-speed switching and low power loss.
Package
The IRLML6402 is a P-channel MOSFET typically housed in a surface-mount SOT-23 package. This compact package is suitable for applications requiring efficient space utilization on printed circuit boards.
