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IRLML6402TR
+BOMMOSFET P-CH 20V 3.7A SOT-23
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メーカーインフィニオンテクノロジーズ
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メーカー品番 #IRLML6402TR
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データシート IRLML6402TR DataSheet
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在庫状況21491
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Supplier | Infineon Technologies |
| Package / Case | Cut Tape (CT) |
| Part Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain(Id) @ 25°C | 3.7A (Ta) |
| Rds On(Max) @ Id Vgs | 65mOhm @ 3.7A, 4.5V |
| Vgs(th)(Max) @ Id | 1.2V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 12 nC @ 5 V |
| Input Capacitance(Ciss)(Max) @ Vds | 633 pF @ 10 V |
| Mounting Type | Surface Mount |
| Supplier Device Package | Micro3™/SOT-23 |
概要
Description
Key features of the IRLML6402TR include a low threshold voltage, making it suitable for low-voltage applications, and an SOT-23 package that provides a compact form factor for space-constrained designs. The MOSFET is typically used in DC-DC converters, load switches, and battery-powered devices, where efficient power management is critical.
Additionally, the IRLML6402TR is designed to handle moderate current levels and is often chosen for its reliability and ease of integration into various circuits. Its common applications are in consumer electronics, automotive systems, and other devices requiring efficient power control. Overall, the IRLML6402TR is a versatile and reliable component for designers seeking efficient power management solutions.
Equivalent
1. IRF5305 - Another P-channel MOSFET with similar voltage and current ratings.
2. FDS6675 - Offers similar characteristics and is also a P-channel MOSFET.
3. SI2301 - Commonly used as an alternative in compact applications.
4. AO3401 - Provides similar functionality and specifications.
5. BSS84 - Suitable for similar low-power applications.
Verify specifications to ensure they match your application's requirements.
Features
1. Type: P-channel MOSFET.
2. V_DS: -20V, representing the maximum drain-source voltage.
3. I_D: -3.7A, indicating the maximum continuous drain current.
4. R_DS(on): Typically 0.045Ω at V_GS = -4.5V, which indicates the resistance between the drain and source when the MOSFET is on.
5. V_GS(th): Threshold voltage is typically around -1V, marking the gate-source voltage needed to start conducting.
6. Package: Supplied in a compact SOT-23 package for surface-mount applications.
7. Applications: Suitable for load switching and battery-powered applications due to its low on-resistance and compact size.
8. Operational Temperature: -55°C to +150°C, allowing for functionality in a wide range of temperatures.
9. Lead-Free and RoHS Compliant: Environmentally friendly and safe for use in various electronics.
These features make the IRLML6402TR suitable for efficient power management in compact, portable devices.
Pinout
1. Gate (G): This pin is used to control the MOSFET, turning it on or off by providing the necessary voltage to create an electric field and enable conduction.
2. Source (S): The source pin is the terminal through which the current enters the MOSFET. For a P-channel MOSFET, conventional current flows out of the source.
3. Drain (D): The drain pin is the terminal through which the current exits the MOSFET.
The IRLML6402TR is designed for low voltage applications and is commonly used for switching and amplification purposes. It has a low on-resistance and is well-suited for battery-powered devices.
Manufacturer
Application
1. Power Management: Used in power supply circuits for efficient load switching.
2. Switching Circuits: Ideal for switching applications in consumer electronics.
3. Battery-Powered Devices: Utilized in portable devices for power conservation.
4. DC-DC Converters: Serves in voltage regulation tasks.
5. Motor Control: Employed in controlling small motors, especially in low-voltage scenarios.
6. Protection Circuits: Used to safeguard circuits from overcurrent conditions.
Its small footprint makes it suitable for space-constrained designs.