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IRS2110STRPBF
+BOMIC GATE DRVR HALF-BRIDGE 16SOIC
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メーカーインフィニオンテクノロジーズ
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メーカー品番 #IRS2110STRPBF
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データシート IRS2110STRPBF DataSheet
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在庫状況3264
365 日間品質保証
7*24 日間の品質保証
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1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Part Status | Active |
| Base Product Number | IRS2110 |
| DigiKey Programmable | Not Verified |
| Driven Configuration | Half-Bridge |
| Channel Type | Independent |
| Number of Drivers | 2 |
| Gate Type | IGBT, MOSFET (N-Channel) |
| Voltage - Supply | 10V ~ 20V |
| Logic Voltage - VIL, VIH | 6V, 9.5V |
| Current - Peak Output (Source, Sink) | 2.5A, 2.5A |
| Input Type | Non-Inverting |
| Rise / Fall Time (Typ) | 25ns, 17ns |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package | 16-SOIC (0.295", 7.50mm Width) |
| Supplier Device Package | 16-SOIC |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
| High Side Voltage - Max (Bootstrap) | 500 V |
概要
Description
The IRS2110STRPBF is a high-voltage, high-speed power MOSFET and IGBT driver designed for use in various electronic applications, such as motor control and power supply systems. It features a single channel and is capable of driving both the high-side and low-side of a half-bridge configuration. The driver can handle voltages up to 600V, making it suitable for applications requiring efficient and robust power management.
Key features of the IRS2110STRPBF include:
- High-side floating capability with a voltage range of up to 600V.
- Gate drive outputs capable of sourcing and sinking up to 2.5A.
- Under-voltage lockout protection for both high and low sides.
- Integrated dead-time circuitry to prevent shoot-through.
- Compatible with both logic-level and standard MOSFETs/IGBTs.
The device is often used in environments where space and energy efficiency are priorities. Its compact design and protection features make it a popular choice for engineers designing power electronics circuits requiring reliable and efficient high-voltage switching.
Key features of the IRS2110STRPBF include:
- High-side floating capability with a voltage range of up to 600V.
- Gate drive outputs capable of sourcing and sinking up to 2.5A.
- Under-voltage lockout protection for both high and low sides.
- Integrated dead-time circuitry to prevent shoot-through.
- Compatible with both logic-level and standard MOSFETs/IGBTs.
The device is often used in environments where space and energy efficiency are priorities. Its compact design and protection features make it a popular choice for engineers designing power electronics circuits requiring reliable and efficient high-voltage switching.
Equivalent
The IRS2110STRPBF is a high-voltage, high-speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Equivalent products include the IR2110, IR2113 and IR2117 from Infineon Technologies, as well as drivers like the FAN7392 from ON Semiconductor and the UCC27201A from Texas Instruments, which offer similar functionalities. Always verify the specific requirements and specifications for compatibility in your application.
Features
The IRS2110STRPBF is a high-voltage, high-speed power MOSFET and IGBT driver. It is designed to drive N-channel power MOSFETs and IGBTs in half-bridge configurations. Key features include:
1. High-Voltage Capability: It can handle up to 600V, making it suitable for high-power applications.
2. Floating Channel: Operates up to 600V with a floating channel designed for bootstrap operation.
3. High-Speed Switching: Provides fast switching times with matched propagation delays for the high and low side outputs.
4. Under-Voltage Lockout (UVLO): Protects the driver from low supply voltage conditions, ensuring reliability.
5. Integrated Deadtime and Shoot-Through Protection: Enhances safety by preventing simultaneous conduction of the high-side and low-side transistors.
6. Wide Supply Voltage Range: Operates from 10V to 20V, providing flexibility in power supply design.
7. Drive Capability: Can source and sink 2A peak current, suitable for driving large power transistors.
These features make the IRS2110STRPBF ideal for applications like motor drives, power supplies, and inverters.
1. High-Voltage Capability: It can handle up to 600V, making it suitable for high-power applications.
2. Floating Channel: Operates up to 600V with a floating channel designed for bootstrap operation.
3. High-Speed Switching: Provides fast switching times with matched propagation delays for the high and low side outputs.
4. Under-Voltage Lockout (UVLO): Protects the driver from low supply voltage conditions, ensuring reliability.
5. Integrated Deadtime and Shoot-Through Protection: Enhances safety by preventing simultaneous conduction of the high-side and low-side transistors.
6. Wide Supply Voltage Range: Operates from 10V to 20V, providing flexibility in power supply design.
7. Drive Capability: Can source and sink 2A peak current, suitable for driving large power transistors.
These features make the IRS2110STRPBF ideal for applications like motor drives, power supplies, and inverters.
Pinout
The IRS2110STRPBF is a high-voltage, high-speed power MOSFET and IGBT driver with independent high and low side referenced output channels. The device comes in a 14-pin package. Here's a quick overview of its pin functions:
1. VCC: Logic supply voltage.
2. VB: High-side floating supply voltage.
3. VS: High-side floating supply return.
4. HO: High-side gate drive output.
5. LO: Low-side gate drive output.
6. VDD: Low-side supply voltage.
7. COM: Low-side return.
8. IN: Logic input for controlling the high-side and low-side outputs.
9. SD: Shutdown input.
10. NC (No Connect): Unused pins.
11. BYPASS (VBIAS): Internally connected to the Vcc supply.
The IRS2110 is used for driving high-voltage, high-speed applications like motor drives and switching power supplies, providing efficient level shifting and gate driving.
1. VCC: Logic supply voltage.
2. VB: High-side floating supply voltage.
3. VS: High-side floating supply return.
4. HO: High-side gate drive output.
5. LO: Low-side gate drive output.
6. VDD: Low-side supply voltage.
7. COM: Low-side return.
8. IN: Logic input for controlling the high-side and low-side outputs.
9. SD: Shutdown input.
10. NC (No Connect): Unused pins.
11. BYPASS (VBIAS): Internally connected to the Vcc supply.
The IRS2110 is used for driving high-voltage, high-speed applications like motor drives and switching power supplies, providing efficient level shifting and gate driving.
Manufacturer
The IRS2110STRPBF is manufactured by Infineon Technologies. Infineon is a global semiconductor company headquartered in Neubiberg, Germany. It specializes in designing, developing, and manufacturing a wide range of semiconductor products, including power semiconductors, microcontrollers, sensors, and security ICs. The company serves various sectors such as automotive, industrial, communications, and consumer electronics. Infineon is known for its innovations in energy efficiency, mobility, and security technologies.
Application
The IRS2110STRPBF is a high-voltage, high-speed power MOSFET and IGBT driver designed for applications requiring efficient electric power conversion. Its primary applications include motor drives, uninterruptible power supplies (UPS), solar inverters, and induction heating systems. It can be used in industrial automation equipment, electric vehicles, and consumer electronics where precise control of high-power devices is necessary. The driver is suitable for half-bridge, full-bridge, and three-phase bridge configurations, making it versatile for various switching applications. Its ability to drive both low-side and high-side transistors improves efficiency and performance in power management systems.
Package
The IRS2110STRPBF is a high-side/low-side driver IC from Infineon Technologies, packaged in a 16-lead Small Outline Package (SOP) with a narrow body, often referred to as SOIC-16. This package is suitable for surface-mount technology (SMT) applications.
