IS43LR32640A-6BLI

The IS43LR32640A-6BLI is a high-speed, low-power synchronous dynamic random-access memory (SDRAM) module commonly used in various electronic applications requiring efficient temporary data storage. It features a 64M x 32-bit memory configuration, effectively providing 2 gigabits of storage capacity. Operating at a 166 MHz clock speed, the module offers a data transfer rate of up to 333 Mbps, making it suitable for applications demanding quick data retrieval and processing.
This SDRAM supports a 2.5V power supply, contributing to its low-power consumption profile, which is ideal for systems prioritizing energy efficiency. The IS43LR32640A-6BLI also incorporates a burst access mode, which enhances data access speed by prefetching data in blocks.
The component is designed for industrial applications, evident from its operational temperature range, which can withstand extreme conditions. It is typically used in consumer electronics, communications systems, and computing devices. Its compact packaging and robust performance make it a reliable choice for designers and engineers aiming to optimize system performance while maintaining cost-effectiveness.

The IS43LR32640A-6BLI is a 64Mb SDRAM chip. Equivalent products include:
1. Micron MT48LC32M16A2 – A 64Mb SDRAM with similar speed and features.
2. Samsung K4S641632H – Another 64Mb SDRAM with comparable specifications.
3. Hynix HY57V641620 – Offers similar memory size and performance.
Always verify specific requirements like speed, power, and temperature ratings when selecting replacements.

The IS43LR32640A-6BLI is a 2M x 32-bit x 4-bank (256Mb) Mobile RLDRAM (Reduced Latency DRAM) from ISSI. It is designed for high-speed, low-latency applications.
The device typically comes in a 144-ball BGA package. The pin count is 144, which includes pins for power, ground, data input/output, address inputs, control signals (such as clock, chip select, write enable, and output enable), and other necessary functions for the operation of the memory.
The main functions of the IS43LR32640A-6BLI include:
- Data Storage: Provides storage for 256 megabits of data.
- Low Latency Access: Designed for applications requiring rapid access to data.
- High-Speed Operation: Supports high-frequency operation, making it suitable for demanding applications.
- Power Efficiency: Features design optimizations for reduced power consumption.
This memory is often used in networking, telecommunications, and other applications requiring high-speed data access with reduced latency.

The IS43LR32640A-6BLI is manufactured by ISSI, or Integrated Silicon Solution, Inc. ISSI is a fabless semiconductor company that focuses on designing and marketing high-performance integrated circuits. The company specializes in memory products, including DRAM, SRAM, and NOR flash, as well as analog and mixed-signal ICs primarily for automotive, communications, industrial, and digital consumer markets. Since being a fabless company, ISSI designs the semiconductor products but outsources the actual fabrication to other facilities. The company's expertise in memory products makes it a key player in industries that require high-reliability and long-life cycle products.

The IS43LR32640A-6BLI is a type of DRAM (Dynamic Random-Access Memory) designed for high-speed data storage and retrieval. It is commonly used in applications requiring substantial memory bandwidth and low latency, such as networking equipment, telecommunications, graphics processing, and high-performance computing systems. It can also be found in embedded systems, automotive electronics, and consumer electronics where efficient data handling is crucial. This memory module is particularly suitable for environments demanding reliability and performance under varying conditions.

The IS43LR32640A-6BLI is packaged in a 66-pin TSOP-II (Thin Small Outline Package Type II).