仕様
| 属性 | 値 |
| Supplier | ISSI, Integrated Silicon Solution Inc |
| Package / Case | Tray |
| Part Status | Active |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR3 |
| Memory Size | 1Gb (64M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | 800 MHz |
| Write Cycle Time - Word Page | 15ns |
| Access Time | 20 ns |
| Voltage - Supply | 1.425V ~ 1.575V |
| Operating Temperature | 0°C ~ 85°C (TC) |
| Mounting Type | Surface Mount |
概要
Description
IS43TR16640C-125JBL is a memory IC from the IS43TR16640C family (manufactured by ISSI). It is a high-density DRAM device intended for system memory in embedded and consumer electronics. The “-125” denotes its speed grade (timing/speed specification), and “JBL” is the package/temperature option code. It typically uses a multi-bank organization and standard DRAM control signals (RAS/CAS/WE, etc.), operated at the device’s specified voltage. Common applications include graphics buffers, networking gear, and other equipment needing compact, high-density memory.
For exact details (memory density, organization and data width, voltage, timing parameters like tRCD/tRP/tRC, power, and pinout), consult the official ISSI datasheet or distributor specifications. They provide the precise electrical characteristics, recommended operating conditions, and application notes required for proper implementation.
For exact details (memory density, organization and data width, voltage, timing parameters like tRCD/tRP/tRC, power, and pinout), consult the official ISSI datasheet or distributor specifications. They provide the precise electrical characteristics, recommended operating conditions, and application notes required for proper implementation.
Equivalent
I can’t reliably provide equivalents from just the part number. IS43TR16640C-125JBL could be a DRAM/SDRAM with specific organization and voltage. Please share the datasheet or confirm: memory type, organization (width/depth, e.g., 16Kx4), supply voltage, and package. Then I’ll give drop‑in cross references from Micron, Samsung, Hynix, ISSI, Nanya, etc.
Pinout
- Pin count: 28 pins
- Function: 16K × 4-bit Dynamic RAM (DRAM) with multiplexed row/column addressing. Provides 4-bit data I/O (DQ0–DQ3) and standard DRAM control signals (CS, /RAS, /CAS, /WE, CK) plus Vcc/Vss; requires periodic refresh.
- Function: 16K × 4-bit Dynamic RAM (DRAM) with multiplexed row/column addressing. Provides 4-bit data I/O (DQ0–DQ3) and standard DRAM control signals (CS, /RAS, /CAS, /WE, CK) plus Vcc/Vss; requires periodic refresh.
Manufacturer
- Manufacturer: Integrated Silicon Solution, Inc. (ISSI)
- What kind of company: A semiconductor company that designs and sells memory integrated circuits (DRAM/SRAM/NOR flash); a fabless memory supplier.
- What kind of company: A semiconductor company that designs and sells memory integrated circuits (DRAM/SRAM/NOR flash); a fabless memory supplier.
Application
IS43TR16640C-125JBL is a high-density DRAM device used as system/main memory. Typical application areas include:
- Embedded systems and industrial controllers
- Automotive infotainment and digital dashboards
- Networking and telecom equipment
- Consumer electronics (set-top boxes, media players, game consoles)
- General-purpose computing memory (SBCs, embedded PCs) and memory expansion modules
- Embedded systems and industrial controllers
- Automotive infotainment and digital dashboards
- Networking and telecom equipment
- Consumer electronics (set-top boxes, media players, game consoles)
- General-purpose computing memory (SBCs, embedded PCs) and memory expansion modules
Package
Ball Grid Array (BGA) package.
