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IS46LQ32256EA-062B2LA3
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メーカー統合シリコンソリューション会社
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メーカー品番 #IS46LQ32256EA-062B2LA3
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在庫状況16022
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| EU Ro HS | Compliant |
| ECCN (US) | EAR99 |
| Part Status | Active |
| HTS | 8542.32.00.36 |
| Automotive | Yes |
| PPAP | Yes |
| Chip Density (bit) | 8G |
| Number of Bits / Word (bit) | 32 |
| Interface Type | LVSTL |
| Minimum Operating Supply Voltage (V) | 1.06|1.7 |
| Typical Operating Supply Voltage (V) | 1.1|1.8 |
| Maximum Operating Supply Voltage (V) | 1.17|1.95 |
| Operating Current (m A) | 660 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Operating Temperature (°C) | 125 |
| Mounting Type | Surface Mount |
| Package Height | 0.8(Max) |
| Package Width | 10 |
| Package Length | 14.5 |
| PCB changed | 200 |
| Package / Case | BGA |
| Supplier Device Package | TFBGA |
| Pin Count | 200 |
| DRAM Type | Mobile LPDDR4 SDRAM |
| Organization | 256Mx32 |
| Number of Internal Banks | 16 |
| Number of Words per Bank | 16M |
| Data Bus Width (bit) | 32 |
| Maximum Clock Rate (M Hz) | 3200 |
| Maximum Access Time (ns) | 3.6 |
| Address Bus Width (bit) | 36 |
| Number of I / O Lines (bit) | 32 |
| Supplier Temperature Grade | Automotive |
| Process Technology | CMOS |
概要
Description
Key attributes of the IS46LQ32256EA-062B2LA3 include its low operational voltage, which reduces power consumption, and its high data transfer rate, which enhances performance in demanding environments. Its architecture supports DDR (Double Data Rate) signaling, allowing for data to be transferred on both the rising and falling edges of the clock signal, effectively doubling the data throughput without increasing the clock frequency.
The chip is built using advanced semiconductor processes, ensuring reliability and durability in various temperatures and conditions. Its compact design makes it suitable for integration into a wide range of devices, from consumer electronics to industrial systems.
Equivalent
Features
Key features include:
- High-Speed Performance: Operates at high frequencies up to 1600 MHz, which is equivalent to 3200 MT/s (megatransfers per second).
- Low Power Consumption: Incorporates features such as deep power-down mode and temperature-compensated self-refresh (TCSR) to reduce energy use.
- Wide Operating Voltage Range: Functions within a standard voltage range of 1.1V to 1.2V, making it energy-efficient.
- Advanced Features: Supports data-bus inversion (DBI) and per-bank refresh for efficient data handling and integrity.
- Package Type: Often available in a compact package suitable for space-constrained applications.
These attributes make it a versatile choice for applications requiring efficient memory solutions.
Pinout
In terms of pin count, the IS46LQ32256EA comes in a 134-ball BGA (Ball Grid Array) package. BGA packages are widely used in memory chips due to their efficient use of space and capability to handle higher pin densities.
As for its function, this DRAM chip is designed to provide high-speed, low-power memory for a range of applications, including mobile devices, automotive systems, and other consumer electronics. Being an LPDDR memory, it offers lower power consumption compared to standard DDR memory, making it suitable for power-sensitive applications.
Overall, the IS46LQ32256EA is an efficient memory solution for applications requiring high performance and low power usage.
Manufacturer
Application
1. Consumer Electronics: Providing memory for devices like smartphones, tablets, and smart TVs.
2. Networking Equipment: Enhancing performance in routers, switches, and other networking hardware.
3. Industrial Applications: Offering reliable memory solutions for industrial control systems and automation.
4. Automotive Systems: Supporting infotainment systems and advanced driver-assistance systems (ADAS).
5. Computing: Serving as a memory module in laptops and desktops for efficient data processing.
These applications benefit from the DRAM's efficiency, speed, and low power consumption.