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IXFH12N100F
+BOMMOSFET N-CH 1000V 12A TO247AD
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メーカーリテルヒューズ社
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メーカー品番 #IXFH12N100F
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在庫状況8512
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Series | HiPerFET™, F Class |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 1000 V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1.05Ohm @ 6A, 10V |
| Vgs(th) (Max) @ Id | 5.5V @ 4mA |
| Gate Charge (Qg) (Max) @ Vgs | 77 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2700 pF @ 25 V |
| Power Dissipation (Max) | 300W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247AD (IXFH) |
| Package / Case | TO-247-3 |
| Base Product Number | IXFH12 |
概要
Description
The IXFH12N100F is a high-voltage, N-channel MOSFET designed for efficient power switching applications. It features a maximum drain-source voltage (Vds) of 100V and a continuous drain current (Id) rating of 12A, making it suitable for a variety of industrial and consumer electronics applications. Its low on-resistance (Rds(on)) ensures minimal power loss during operation, enhancing overall system efficiency.
This MOSFET is particularly useful in applications such as DC-DC converters, motor drives, and power inverters, where reliable performance under high-voltage conditions is crucial. The IXFH12N100F also offers fast switching speeds, allowing for improved response times in switching circuits.
Additionally, it comes in a TO-220 package, facilitating easy heat dissipation and installation in various electronic designs. Users can expect durability and stability from this component, making it a popular choice among engineers seeking robust solutions for high-power applications.
This MOSFET is particularly useful in applications such as DC-DC converters, motor drives, and power inverters, where reliable performance under high-voltage conditions is crucial. The IXFH12N100F also offers fast switching speeds, allowing for improved response times in switching circuits.
Additionally, it comes in a TO-220 package, facilitating easy heat dissipation and installation in various electronic designs. Users can expect durability and stability from this component, making it a popular choice among engineers seeking robust solutions for high-power applications.
Equivalent
The IXFH12N100F is an N-channel MOSFET with a voltage rating of 100V and a current rating of 12A. Equivalent products include:
1. IRF120 (International Rectifier)
2. STP12NM100 (STMicroelectronics)
3. FQP12N100 (Fairchild Semiconductor)
4. SP100N10 (Sanken)
Always check specifications for exact parameters to ensure compatibility.
1. IRF120 (International Rectifier)
2. STP12NM100 (STMicroelectronics)
3. FQP12N100 (Fairchild Semiconductor)
4. SP100N10 (Sanken)
Always check specifications for exact parameters to ensure compatibility.
Features
The IXFH12N100F is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 100V, making it suitable for high-voltage applications.
2. Current Rating: It can handle a continuous drain current (Id) of up to 12A, which is beneficial for power management.
3. Low Rds(on): With a low on-resistance (Rds(on)) of approximately 0.24 ohms, it ensures minimal conduction losses.
4. Fast Switching: The device supports fast switching speeds, enhancing efficiency in switching applications.
5. Thermal Performance: It has a robust thermal characteristic, which allows for effective heat dissipation and better reliability.
6. Package Type: Typically available in TO-220 or similar packages, facilitating easy mounting and heat sinking.
7. Applications: Suitable for use in power supplies, motor drivers, and other switching applications where efficiency and reliability are critical.
These features make the IXFH12N100F a versatile choice for various electronic applications.
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 100V, making it suitable for high-voltage applications.
2. Current Rating: It can handle a continuous drain current (Id) of up to 12A, which is beneficial for power management.
3. Low Rds(on): With a low on-resistance (Rds(on)) of approximately 0.24 ohms, it ensures minimal conduction losses.
4. Fast Switching: The device supports fast switching speeds, enhancing efficiency in switching applications.
5. Thermal Performance: It has a robust thermal characteristic, which allows for effective heat dissipation and better reliability.
6. Package Type: Typically available in TO-220 or similar packages, facilitating easy mounting and heat sinking.
7. Applications: Suitable for use in power supplies, motor drivers, and other switching applications where efficiency and reliability are critical.
These features make the IXFH12N100F a versatile choice for various electronic applications.
Pinout
The IXFH12N100F is a high-voltage N-channel MOSFET with a pin count of 3. The pins/functions are as follows:
1. Gate (G): This pin controls the MOSFET and is used to turn it on and off by applying a voltage.
2. Drain (D): The drain pin connects to the load; current flows from drain to source when the MOSFET is on.
3. Source (S): The source pin connects to ground or the negative side of the circuit; current flows into the source when the MOSFET is conducting.
This device is designed for high-voltage applications up to 1000V and has a current rating of 12A. It is commonly used in power conversion and switching applications.
1. Gate (G): This pin controls the MOSFET and is used to turn it on and off by applying a voltage.
2. Drain (D): The drain pin connects to the load; current flows from drain to source when the MOSFET is on.
3. Source (S): The source pin connects to ground or the negative side of the circuit; current flows into the source when the MOSFET is conducting.
This device is designed for high-voltage applications up to 1000V and has a current rating of 12A. It is commonly used in power conversion and switching applications.
Manufacturer
The IXFH12N100F is manufactured by IXYS Corporation, which is a subsidiary of Littelfuse, Inc. IXYS specializes in the development and production of high-performance power semiconductors, including MOSFETs, IGBTs, and rectifiers, among other components. The company serves various industries such as renewable energy, industrial automation, telecommunications, and automotive applications. IXYS is known for its innovative solutions in power management and energy efficiency, focusing on providing high-quality products that enhance performance in electronic systems. Their expertise in semiconductor technology makes them a key player in the power electronics market.
Application
The IXFH12N100F is a high-voltage N-channel MOSFET primarily used in high-power applications such as:
1. Switching Power Supplies: For efficient power conversion in AC-DC and DC-DC converters.
2. Induction Heating: Utilized in high-frequency inverters for heating applications.
3. Motor Drives: Employed in controlling large motors for industrial and automotive uses.
4. Lighting Control: Used in high-intensity discharge (HID) lighting systems.
5. RF Amplifiers: Suitable for radio frequency applications due to its high-frequency performance.
Its high voltage rating and low on-resistance make it ideal for these demanding environments.
1. Switching Power Supplies: For efficient power conversion in AC-DC and DC-DC converters.
2. Induction Heating: Utilized in high-frequency inverters for heating applications.
3. Motor Drives: Employed in controlling large motors for industrial and automotive uses.
4. Lighting Control: Used in high-intensity discharge (HID) lighting systems.
5. RF Amplifiers: Suitable for radio frequency applications due to its high-frequency performance.
Its high voltage rating and low on-resistance make it ideal for these demanding environments.
Package
The IXFH12N100F is typically packaged in a TO-247 format, which is a type of plastic package designed for high-power applications, providing good thermal performance and reliability.
