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IXFH150N20T
+BOMMOSFET N-CH 200V 150A TO247AD
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メーカーイクシス
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メーカー品番 #IXFH150N20T
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データシート IXFH150N20T DataSheet
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仕様
| 属性 | 値 |
| Series | HiPerFET™, Trench |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain (Id) @ 25°C | 150A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 75A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 4mA |
| Gate Charge (Qg) (Max) @ Vgs | 177 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 11700 pF @ 25 V |
| Power Dissipation (Max) | 890W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247AD (IXFH) |
| Package / Case | TO-247-3 |
| Base Product Number | IXFH150 |
概要
Description
The IXFH150N20T is a high-performance N-channel MOSFET designed for power applications. With a maximum drain-source voltage of 200V and a continuous drain current rating of 150A, it is suitable for use in various power management systems, including industrial motor drives, power supplies, and DC-DC converters.
This MOSFET features a low on-resistance (R_DS(on)) of approximately 0.060 ohms, which helps minimize power losses and improve efficiency. It also has a fast switching speed, enabling high-frequency operation, critical for modern power electronics.
The IXFH150N20T is housed in a TO-220 package, providing excellent thermal performance and ease of mounting to heat sinks. This component is ideal for applications requiring high reliability and efficiency, making it a popular choice among engineers in power electronics design. Additionally, it is important to consider thermal management and appropriate gate drive voltages to ensure optimal performance in practical applications.
This MOSFET features a low on-resistance (R_DS(on)) of approximately 0.060 ohms, which helps minimize power losses and improve efficiency. It also has a fast switching speed, enabling high-frequency operation, critical for modern power electronics.
The IXFH150N20T is housed in a TO-220 package, providing excellent thermal performance and ease of mounting to heat sinks. This component is ideal for applications requiring high reliability and efficiency, making it a popular choice among engineers in power electronics design. Additionally, it is important to consider thermal management and appropriate gate drive voltages to ensure optimal performance in practical applications.
Equivalent
The IXFH150N20T is a high-voltage N-channel MOSFET. Equivalent products include the IRF150, STP150N20, and FQP150N20. For exact replacements, check specifications like V_DS, I_D, R_DS(on), and package type from manufacturers such as Infineon, STMicroelectronics, or ON Semiconductor to ensure compatibility with your application. Always review the datasheets for precise parameters.
Features
The IXFH150N20T is an N-channel power MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 200V, making it suitable for high-voltage applications.
2. Current Rating: The device can handle a continuous drain current (Id) of up to 150A, providing robust performance in demanding environments.
3. Low On-Resistance (Rds(on)): With an Rds(on) of approximately 0.075 ohms at 10V gate voltage, it ensures efficient power management with minimal heat generation.
4. Fast Switching: The MOSFET is designed for high-speed switching, making it suitable for applications in power supplies and motor drives.
5. Thermal Management: It features a TO-220 package, which aids in heat dissipation and allows for easy mounting on heatsinks.
6. Gate Threshold Voltage: The gate threshold voltage (Vgs(th)) ranges from 2V to 4V, enabling compatibility with various control circuits.
Overall, the IXFH150N20T is ideal for industrial power applications, including converters and inverters.
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 200V, making it suitable for high-voltage applications.
2. Current Rating: The device can handle a continuous drain current (Id) of up to 150A, providing robust performance in demanding environments.
3. Low On-Resistance (Rds(on)): With an Rds(on) of approximately 0.075 ohms at 10V gate voltage, it ensures efficient power management with minimal heat generation.
4. Fast Switching: The MOSFET is designed for high-speed switching, making it suitable for applications in power supplies and motor drives.
5. Thermal Management: It features a TO-220 package, which aids in heat dissipation and allows for easy mounting on heatsinks.
6. Gate Threshold Voltage: The gate threshold voltage (Vgs(th)) ranges from 2V to 4V, enabling compatibility with various control circuits.
Overall, the IXFH150N20T is ideal for industrial power applications, including converters and inverters.
Pinout
The IXFH150N20T is a high-performance N-channel MOSFET manufactured by IXYS. It features a pin count of 4 in a TO-220 package. The pin functions are as follows:
1. Gate (G) - This is the control terminal that turns the MOSFET on or off by applying a voltage.
2. Drain (D) - This is the terminal through which the main current flows when the device is on.
3. Source (S) - This terminal is connected to the ground or the negative side of the circuit.
The IXFH150N20T is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 200V and a continuous drain current (I_D) of 150A. It is commonly used in power management and switching applications.
1. Gate (G) - This is the control terminal that turns the MOSFET on or off by applying a voltage.
2. Drain (D) - This is the terminal through which the main current flows when the device is on.
3. Source (S) - This terminal is connected to the ground or the negative side of the circuit.
The IXFH150N20T is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 200V and a continuous drain current (I_D) of 150A. It is commonly used in power management and switching applications.
Manufacturer
The IXFH150N20T is a power MOSFET manufactured by IXYS Corporation, which is a part of the Littelfuse family. IXYS is known for designing and producing semiconductor products, including power MOSFETs, IGBTs, diodes, and thyristors. The company specializes in providing solutions for power management, energy efficiency, and high-performance applications across various industries, such as automotive, industrial, telecommunications, and renewable energy. IXYS has a strong reputation in the semiconductor market for its innovative technologies and high-quality products tailored to meet the demands of modern power electronics.
Application
The IXFH150N20T is an N-channel MOSFET primarily used in power electronics applications. Its key areas include:
1. Switching Power Supplies: Enhancing efficiency in DC-DC converters and inverters.
2. Motor Drives: Controlling electric motors in industrial and automotive applications.
3. Power Management: Used in power distribution and regulation circuits.
4. Lighting Applications: Driving LED systems with high efficiency.
5. Telecommunications: Used in RF power amplifiers and signal amplifiers.
6. Consumer Electronics: Found in devices requiring efficient power handling and regulation.
Its high voltage and current ratings make it suitable for demanding applications.
1. Switching Power Supplies: Enhancing efficiency in DC-DC converters and inverters.
2. Motor Drives: Controlling electric motors in industrial and automotive applications.
3. Power Management: Used in power distribution and regulation circuits.
4. Lighting Applications: Driving LED systems with high efficiency.
5. Telecommunications: Used in RF power amplifiers and signal amplifiers.
6. Consumer Electronics: Found in devices requiring efficient power handling and regulation.
Its high voltage and current ratings make it suitable for demanding applications.
Package
The IXFH150N20T is packaged in a TO-220 format. This package type is suitable for high-power applications, offering good thermal performance and ease of heat dissipation.
