仕様
| 属性 | 値 |
| Package | Tube |
| ProductStatus | Active |
| IGBTType | NPT |
| Voltage-CollectorEmitterBreakdown(Max) | 1700 V |
| Current-Collector(Ic)(Max) | 12 A |
| Current-CollectorPulsed(Icm) | 24 A |
| Vce(on)(Max)@VgeIc | 4V @ 15V, 6A |
| Power-Max | 75 W |
| SwitchingEnergy | 1.5mJ (off) |
| InputType | Standard |
| GateCharge | 20 nC |
| Td(on/off)@25°C | 40ns/250ns |
| TestCondition | 1360V, 6A, 33Ohm, 15V |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
概要
Description
The IXGT6N170 is a specific model of an Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS Corporation. It is designed for high-voltage and high-current applications, making it suitable for use in industrial systems such as motor drives, induction heating, and power inverters. The "170" in its model number typically denotes its voltage rating, suggesting a capability to handle up to 1700 volts.
The IGBT combines the simple gate-drive characteristics of a MOSFET with the high-current and low-saturation-voltage capability of a bipolar transistor, making it efficient and effective for switching applications. The IXGT6N170 likely features a robust package designed to dissipate heat effectively, ensuring reliability and longevity under demanding conditions. Its fast switching speed and high efficiency make it a preferred choice in applications where energy efficiency and precise control are important.
Users should refer to the specific datasheet for detailed electrical characteristics, thermal properties, and safe operating conditions to ensure optimal performance in their specific application.
The IGBT combines the simple gate-drive characteristics of a MOSFET with the high-current and low-saturation-voltage capability of a bipolar transistor, making it efficient and effective for switching applications. The IXGT6N170 likely features a robust package designed to dissipate heat effectively, ensuring reliability and longevity under demanding conditions. Its fast switching speed and high efficiency make it a preferred choice in applications where energy efficiency and precise control are important.
Users should refer to the specific datasheet for detailed electrical characteristics, thermal properties, and safe operating conditions to ensure optimal performance in their specific application.
Equivalent
The IXGT6N170 is a high-voltage IGBT. Equivalent products include:
1. STMicroelectronics STGW20NC60VD
2. Infineon IKW15N120T2
3. Fairchild FGA25N120ANTD
4. Toshiba MG200Q2YS40
These alternatives may vary in terms of voltage, current ratings, and packaging, so it’s crucial to check their datasheets for compatibility with your specific application requirements.
1. STMicroelectronics STGW20NC60VD
2. Infineon IKW15N120T2
3. Fairchild FGA25N120ANTD
4. Toshiba MG200Q2YS40
These alternatives may vary in terms of voltage, current ratings, and packaging, so it’s crucial to check their datasheets for compatibility with your specific application requirements.
Features
The IXGT6N170 is an insulated-gate bipolar transistor (IGBT) manufactured by IXYS Corporation. It is designed for high power applications due to its robust features and specifications. Key features include:
1. Voltage and Current Ratings: The IXGT6N170 typically supports a high voltage rating and moderate current capacity, making it suitable for medium to high-power applications.
2. High-Speed Switching: This IGBT is known for its fast switching capabilities, which improves efficiency and reduces energy losses during operation.
3. Low On-State Voltage Drop: The low voltage drop during the on state minimizes power dissipation and enhances thermal performance.
4. Rugged Construction: It is designed to withstand high electrical stress and has a strong resistance to thermal cycling and other environmental stresses.
5. Applications: Commonly used in motor drives, power converters, inverters, and other applications where efficient energy switching is crucial.
6. Package Type: The component is often available in a TO-247 package, providing reliable thermal management and ease of mounting.
These features make the IXGT6N170 a versatile choice for engineers working in power electronics.
1. Voltage and Current Ratings: The IXGT6N170 typically supports a high voltage rating and moderate current capacity, making it suitable for medium to high-power applications.
2. High-Speed Switching: This IGBT is known for its fast switching capabilities, which improves efficiency and reduces energy losses during operation.
3. Low On-State Voltage Drop: The low voltage drop during the on state minimizes power dissipation and enhances thermal performance.
4. Rugged Construction: It is designed to withstand high electrical stress and has a strong resistance to thermal cycling and other environmental stresses.
5. Applications: Commonly used in motor drives, power converters, inverters, and other applications where efficient energy switching is crucial.
6. Package Type: The component is often available in a TO-247 package, providing reliable thermal management and ease of mounting.
These features make the IXGT6N170 a versatile choice for engineers working in power electronics.
Pinout
The IXGT6N170 is a power MOSFET manufactured by IXYS Corporation. It typically comes in a TO-247 package. The pin count for the TO-247 package is three, which corresponds to the standard pin configuration for such MOSFETs:
1. Gate (G): This pin controls the on-off state of the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This is the pin where the current enters the MOSFET when it is turned on.
3. Source (S): The current exits the MOSFET through this pin. It is also typically connected to the ground or the negative side of the power supply in a circuit.
The IXGT6N170 is designed for high-voltage applications, offering a voltage rating of 1700V and a current rating of around 6A. It is used in applications requiring efficient power switching, such as power supplies, converters, and motor drives.
1. Gate (G): This pin controls the on-off state of the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This is the pin where the current enters the MOSFET when it is turned on.
3. Source (S): The current exits the MOSFET through this pin. It is also typically connected to the ground or the negative side of the power supply in a circuit.
The IXGT6N170 is designed for high-voltage applications, offering a voltage rating of 1700V and a current rating of around 6A. It is used in applications requiring efficient power switching, such as power supplies, converters, and motor drives.
Manufacturer
The IXGT6N170 is manufactured by IXYS Corporation, which is a well-known company that specializes in the production of power semiconductors and integrated circuits. IXYS focuses on providing products for power management, energy efficiency, and renewable energy applications. Their product portfolio includes power MOSFETs, IGBTs, solid-state relays, and other semiconductor devices that are widely used in industrial, telecommunications, and consumer markets. IXYS was acquired by Littelfuse, Inc. in 2018, a company known for circuit protection, power control, and sensing technologies.
Application
The IXGT6N170 is a high-voltage, N-channel IGBT (Insulated Gate Bipolar Transistor) used primarily in power electronics applications. It is suitable for use in various industrial applications, including motor drives, induction heating, and inverters. It can also be utilized in switch-mode power supplies (SMPS), uninterruptible power supplies (UPS), and power factor correction (PFC) circuits. Its high voltage and current capacity make it ideal for applications requiring efficient power switching and control.
Package
The IXGT6N170 is an IGBT (Insulated Gate Bipolar Transistor) that typically comes in a TO-247 package. This package type is commonly used for power semiconductors, providing a balance of thermal performance and compact size, making it suitable for high-power applications.
