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IXTP80N10T
+BOMMOSFET N-CH 100V 80A TO220AB
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メーカーリテルヒューズ社
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メーカー品番 #IXTP80N10T
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在庫状況6646
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Series | Trench |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 3040 pF @ 25 V |
| Power Dissipation (Max) | 230W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-3 |
| Package / Case | TO-220-3 |
| Base Product Number | IXTP80 |
概要
Description
The IXTP80N10T is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power applications. It has a maximum drain-source voltage of 100V and a continuous drain current rating of 80A, making it suitable for various switching and amplification tasks in power management circuits.
This MOSFET features low on-state resistance (R_DS(on)), which minimizes power losses during operation, contributing to improved efficiency in applications such as power supplies, motor drives, and LED lighting. The device also offers fast switching speeds, enhancing its performance in high-frequency applications.
The IXTP80N10T typically comes in a TO-220 package, facilitating easy mounting and heat dissipation. Its robust design allows for reliable operation in demanding environments.
Overall, the IXTP80N10T is an excellent choice for engineers seeking efficient and effective solutions for power electronics applications.
This MOSFET features low on-state resistance (R_DS(on)), which minimizes power losses during operation, contributing to improved efficiency in applications such as power supplies, motor drives, and LED lighting. The device also offers fast switching speeds, enhancing its performance in high-frequency applications.
The IXTP80N10T typically comes in a TO-220 package, facilitating easy mounting and heat dissipation. Its robust design allows for reliable operation in demanding environments.
Overall, the IXTP80N10T is an excellent choice for engineers seeking efficient and effective solutions for power electronics applications.
Equivalent
The IXTP80N10T is an N-channel MOSFET with a 100V rating and a continuous current capacity of 80A. Equivalent products include the STP80NF10, IRF840, and FQP80N10. Always check datasheets for specific parameters such as Rds(on), gate threshold voltage, and thermal characteristics to ensure compatibility for your application.
Features
The IXTP80N10T is an N-channel MOSFET designed for high-performance switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 100V, making it suitable for various high-voltage applications.
2. Continuous Current: It can handle a continuous drain current (Id) of up to 80A, ensuring it can manage significant power loads.
3. Rds(on): The on-resistance is typically low (around 0.08 ohms), which minimizes conduction losses during operation.
4. Gate Threshold Voltage: A low gate threshold voltage (Vgs) typically ranging from 2V to 4V allows for easy driving with standard logic levels.
5. Fast Switching: The device supports rapid switching speeds, making it ideal for high-frequency applications.
6. Thermal Performance: It has a reasonable thermal resistance, which aids in efficient heat dissipation.
7. Package Type: Typically housed in a TO-220 package, facilitating easy mounting and heat sinking.
These features make the IXTP80N10T suitable for power management, motor control, and DC-DC converters.
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 100V, making it suitable for various high-voltage applications.
2. Continuous Current: It can handle a continuous drain current (Id) of up to 80A, ensuring it can manage significant power loads.
3. Rds(on): The on-resistance is typically low (around 0.08 ohms), which minimizes conduction losses during operation.
4. Gate Threshold Voltage: A low gate threshold voltage (Vgs) typically ranging from 2V to 4V allows for easy driving with standard logic levels.
5. Fast Switching: The device supports rapid switching speeds, making it ideal for high-frequency applications.
6. Thermal Performance: It has a reasonable thermal resistance, which aids in efficient heat dissipation.
7. Package Type: Typically housed in a TO-220 package, facilitating easy mounting and heat sinking.
These features make the IXTP80N10T suitable for power management, motor control, and DC-DC converters.
Pinout
The IXTP80N10T is an N-channel power MOSFET with a TO-220 package. It has three pins:
1. Gate (G): This is the control terminal used to turn the MOSFET on or off. A voltage applied to the gate controls the flow of current between the drain and source.
2. Drain (D): This is the terminal through which the main current flows into the MOSFET. It connects to the load.
3. Source (S): This is the terminal through which the current exits the MOSFET, typically connected to ground or the lower potential in the circuit.
The IXTP80N10T is designed for high-power applications, capable of handling up to 80A of continuous current and has a maximum drain-source voltage rating of 100V. Its low on-resistance allows for efficient operation, making it suitable for various applications in power management and switching.
1. Gate (G): This is the control terminal used to turn the MOSFET on or off. A voltage applied to the gate controls the flow of current between the drain and source.
2. Drain (D): This is the terminal through which the main current flows into the MOSFET. It connects to the load.
3. Source (S): This is the terminal through which the current exits the MOSFET, typically connected to ground or the lower potential in the circuit.
The IXTP80N10T is designed for high-power applications, capable of handling up to 80A of continuous current and has a maximum drain-source voltage rating of 100V. Its low on-resistance allows for efficient operation, making it suitable for various applications in power management and switching.
Manufacturer
The IXTP80N10T is manufactured by IXYS Corporation, which is a part of the Littelfuse, Inc. family. IXYS is known for producing power semiconductors and integrated circuit solutions for various applications, including automotive, industrial, telecommunications, and renewable energy systems. The company specializes in components such as MOSFETs, IGBTs, diodes, and more, focusing on high-efficiency power management solutions. Littelfuse, Inc. acquired IXYS in 2018, further expanding its portfolio in the power semiconductor market. Overall, IXYS Corporation is recognized for its innovative technologies that address the needs of power electronics across multiple industries.
Application
The IXTP80N10T is an N-channel power MOSFET primarily used in applications such as DC-DC converters, motor drivers, and power management systems. Its high current and voltage ratings make it suitable for industrial automation, renewable energy systems, and electric vehicles. Additionally, it's utilized in switching power supplies, audio amplifiers, and lighting control circuits. The device's fast switching speeds and low on-resistance enhance efficiency in various electronic applications.
Package
The IXTP80N10T is typically packaged in a TO-220 format. This package type is designed for high-power applications, providing good thermal performance and ease of mounting to heatsinks.
