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IXTQ200N10T
+BOMMOSFET N-CH 100V 200A TO3P
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メーカーイクシス
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メーカー品番 #IXTQ200N10T
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在庫状況5680
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Supplier | IXYS |
| Package / Case | Tube |
| Series | Trench |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 200A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 5.5mOhm @ 50A, 10V |
| Vgs(th)(Max) @ Id | 4.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 152 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 9400 pF @ 25 V |
| Power Dissipation (Max) | 550W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-3P |
