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K4A8G165WB-BIRC
+BOM1.2V 8Gbit 512Mx16 DDR4 FBGA-96 Memory (ICs) RoHS
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メーカー三星
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メーカー品番 #K4A8G165WB-BIRC
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データシート K4A8G165WB-BIRC DataSheet
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在庫状況4031
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Packaging | FBGA-96 |
| Interface | DDR4 |
| Memory Format | 512Mx16 |
| Memory Size | 8Gbit |
| Operating Temperature | -40℃~+95℃ |
| Voltage - Supply | 1.2V |
概要
Description
The K4A8G165WB-BIRC is often utilized in situations where enhanced performance and speed are critical, such as in smartphones, tablets, and PCs. It supports a variety of operational functions, including burst reads and writes, bank interleaving, and auto-refresh, which optimize its performance in multitasking environments. Moreover, its design allows for low latency and high data bandwidth, catering to the demands of modern applications that require rapid data processing capabilities while maintaining energy efficiency.
Equivalent
1. Micron: MT53B512M32D2NP
2. SK Hynix: H9HKNNN8KUMLHR-NME
3. Kingston: Various LPDDR4 8Gb chips with matching specs
These equivalents should generally match the size, speed, and power specifications of the Samsung chip for compatibility. Always verify specific requirements for exact replacements.
Features
1. Type: LPDDR4, ideal for mobile and portable applications requiring efficient power consumption.
2. Capacity: 8 Gb (Gigabits), providing ample space for data storage and operations in compact devices.
3. Performance: High speed with a data transfer rate that significantly enhances application performance and responsiveness.
4. Power Efficiency: Designed for low power consumption, extending battery life in mobile devices by reducing energy usage.
5. Package: Comes in a compact and thermally efficient package, suitable for integration into small form factor devices.
6. Bandwidth: Offers high bandwidth, which is critical for supporting advanced graphics and multimedia applications.
7. Applications: Commonly used in smartphones, tablets, laptops, and other portable electronic devices requiring reliable and fast memory performance.
These features make it suitable for modern devices that demand high efficiency and quick data processing capabilities.
Pinout
The primary function of the K4A8G165WB-BIRC is to serve as dynamic random-access memory, providing high-speed data storage and retrieval for computing devices. It is generally used in applications like PCs, laptops, and servers, where efficient and fast memory access is crucial. The DDR4 specification of this chip ensures improved performance and bandwidth over its predecessors (such as DDR3), along with better power efficiency.
Manufacturer
Application
Package
Frequently Asked Questions
Q: Is this IC compatible with standard DDR4 1.2V power rails?
A: Yes, this K4A8G165WB-BIRC operates at a standard DDR4 supply voltage of 1.2V.
Q: What is the memory density and organization of this part?
A: It is an 8Gbit (8Gb) DDR4 SDRAM organized as 512M x 16 (512 Megawords by 16 bits).
Q: What is the operating temperature range for this Samsung memory?
A: It supports an extended industrial temperature range from -40°C to +95°C, suitable for harsh environments.
Q: What package type does this component use?
A: It uses a 96-ball Fine-Pitch Ball Grid Array (FBGA-96) package for space-efficient PCB mounting.
Q: Is this memory suitable for automotive or industrial applications?
A: Yes, its wide -40°C to +95°C temperature range makes it ideal for demanding industrial and embedded systems.
Q: What is the difference between x16 and x8 DDR4 configurations?
A: This x16 device has a 16-bit data bus, offering higher bandwidth per chip compared to x8, which uses an 8-bit bus.