K4B2G1646F-BCNB

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K4B2G1646F-BCNB

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1.5V 2Gbit 1.066GHz DDR3 SDRAM FBGA-96 Memory (ICs) RoHS

365 日間品質保証

7*24 日間の品質保証

90-時間単位のサービス保証

1日間のアフターサービス保証

仕様

属性
Packaging FBGA-96
Clock Frequency 1.066GHz
Memory Format DDR3 SDRAM
Memory Size 2Gbit
Operating temperature 0℃~+85℃
Voltage - Supply 1.5V

概要

Description

The K4B2G1646F-BCNB is a type of DRAM (Dynamic Random Access Memory) chip, specifically a DDR3 SDRAM, produced by Samsung. This component is designed for high-speed data storage and retrieval, making it essential for various computing applications, including personal computers, servers, and other electronic devices requiring efficient memory solutions.
Key features of the K4B2G1646F-BCNB include a capacity of 2Gb (gigabits), a high-speed data transfer rate, and low power consumption, which makes it suitable for portable and battery-powered devices. The chip operates at a voltage of 1.5V, and its architecture allows for high-density memory configurations, which can enhance performance and efficiency across multiple platforms.
Uses of the K4B2G1646F-BCNB typically include providing temporary data storage that supports the operation of a device’s processor, contributing to faster processing times and improved multitasking capabilities. Its efficient design aligns with modern requirements for performance and energy efficiency in electronic components.

Equivalent

The K4B2G1646F-BCNB is a 2Gb DDR3 SDRAM chip, typically used in applications requiring high-speed data processing. Equivalent products include:
1. Micron MT41J256M16RE-15E
2. Hynix H5TQ2G63GFR-RDC
3. Nanya NT5CB256M16EP-DI
4. Elpida (now Micron) EDJ2116DEBG-GN-F
5. Kingston D2516EC4BXGGB
These alternatives offer similar specifications in terms of capacity, speed, and voltage, making them suitable replacements depending on your system requirements.

Features

The K4B2G1646F-BCNB is a DRAM memory module produced by Samsung. It is a 2Gb (gigabit) DDR3 (Double Data Rate 3) SDRAM (Synchronous Dynamic Random-Access Memory) chip. Key features include:
1. Capacity: 2Gb (256MB).
2. Architecture: 2G x 16-bit configuration.
3. Data Rate: Supports data rates of up to 1600 Mbps (megabits per second).
4. Voltage: Operates at 1.5V, making it suitable for power-efficient applications.
5. Package: Available in a 96-ball FBGA (Fine-pitch Ball Grid Array) package, which is compact and enhances thermal performance.
6. Application: Commonly used in computing devices, including laptops, desktops, and servers, for its high-speed data processing capabilities.
7. Temperature Range: Designed to operate within standard commercial temperature ranges.
These features make the K4B2G1646F-BCNB an ideal choice for applications requiring reliable, high-speed memory performance.

Pinout

The K4B2G1646F-BCNB is a 2Gb DDR3 SDRAM chip produced by Samsung. It comes in a standard 78-ball Fine-Pitch Ball Grid Array (FBGA) package. The device features a 16-bit data bus, and it is typically used in high-performance computing and consumer electronics for applications requiring large memory bandwidth.
Key functions and features of the K4B2G1646F-BCNB include:
1. Memory Organization: It's organized as 128M x 16-bit.
2. Speed: Operates at clock speeds compatible with DDR3 specifications; commonly up to 1866 Mbps.
3. Voltage: Standard operating voltage is 1.5V, with variations available for lower power consumption.
4. Data Transfer: Synchronous operation with a double data rate, transferring data on both the rising and falling edges of the clock signal.
This chip supports features like burst access, auto precharge, and auto refresh, which enhance its efficiency and performance in managing data-intensive tasks.

Manufacturer

The K4B2G1646F-BCNB is manufactured by Samsung Electronics. Samsung is a South Korean multinational conglomerate known primarily for its role as a leading manufacturer of electronic components and consumer electronics. The company operates in various sectors, including semiconductors, telecommunications, and digital media. Samsung is one of the world's largest producers of memory chips, smartphones, displays, and other electronic devices. The K4B2G1646F-BCNB is a DDR3 SDRAM chip, which is used in a variety of electronic applications to provide volatile memory storage.

Application

The K4B2G1646F-BCNB is a 2Gb DDR3 SDRAM memory chip commonly used in various electronic applications. Its typical application areas include:
1. Computers and Laptops: Provides volatile memory for processing tasks.
2. Embedded Systems: Utilized in automotive electronics, industrial machinery, and IoT devices for data storage and retrieval.
3. Consumer Electronics: Applied in smartphones, tablets, smart TVs, and gaming consoles for efficient memory management.
4. Networking Equipment: Supports routers, switches, and other network devices.
5. Servers: Employed in data centers for high-speed data access and processing.
These applications leverage its high bandwidth, low power consumption, and efficient performance characteristics.

Package

The K4B2G1646F-BCNB is a DRAM chip from Samsung, specifically a DDR3 SDRAM. The package type for this memory chip is FBGA (Fine-Pitch Ball Grid Array), which is common for DRAM modules due to its compact form and efficient electrical performance.

Frequently Asked Questions


Q: What is the memory density and organization of the K4B2G1646F-BCNB?
A: It offers 2Gbit density organized as 128M x 16 bits, suitable for high-bandwidth applications.


Q: What is the maximum clock frequency supported by this DDR3 SDRAM?
A: It supports a clock frequency up to 1.066 GHz, corresponding to DDR3-2133 data rates.


Q: What is the operating voltage requirement for this component?
A: The required supply voltage is 1.5V, standard for DDR3 SDRAM devices.


Q: What is the operating temperature range for the K4B2G1646F-BCNB?
A: It operates within a commercial temperature range of 0°C to +85°C.


Q: What package type does this memory chip use?
A: It is housed in a 96-ball FBGA package (FBGA-96) for compact PCB design.


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