K4UBE3D4AB-MGCL

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K4UBE3D4AB-MGCL

+BOM

32Gbit 570mV~650mV 2.133GHz LPDDR4X SDRAM FBGA-200 Memory (ICs) RoHS

365 日間品質保証

7*24 日間の品質保証

90-時間単位のサービス保証

1日間のアフターサービス保証

仕様

属性 値
Packaging FBGA-200
ClockFrequency 2.133GHz
MemoryFormat LPDDR4X SDRAM
MemorySize 32Gbit
Operatingtemperature -25℃~+85℃
Voltage-Supply 570mV~650mV

概要

Description

K4UBE3D4AB-MGCL appears to be a specialized or technical term, likely relating to a specific field such as technology, engineering, or a proprietary product. Without additional context, it is challenging to provide a precise introduction. However, here's a general approach:
K4UBE3D4AB-MGCL might represent a code, model number, or product identifier used within a particular industry. If it pertains to a technical device or system, it could involve specific characteristics or capabilities, possibly within computing, electronics, or materials science. The components of the term, such as "MGCL," could signify a material composition or a project name, while "K4UBE3D4AB" might denote a series or version number.
If you have context or additional information, consider exploring resources or documentation specific to the field or company associated with this term for a more detailed understanding. Alternatively, reaching out to experts or forums related to the possible industry could provide further insights.

Equivalent

The K4UBE3D4AB-MGCL is a Samsung LPDDR4X DRAM chip, commonly used in mobile and embedded applications. Equivalent products would include similar LPDDR4X DRAM chips from other major manufacturers like Micron, SK Hynix, and Kingston, such as Micron's MT53E384M32D2NP series or SK Hynix's H9HKNNNBRUMU series. These equivalents should match in terms of capacity, speed, and voltage to be considered comparable. Always verify specific technical specifications and compatibility for your application.

Pinout

The K4UBE3D4AB-MGCL is a Samsung LPDDR4X DRAM chip. It typically comes in a 200-ball FBGA (Fine-Pitch Ball Grid Array) package. This packaging format is common for such memory chips to support high-speed data transfer and efficient heat dissipation.
As for its function, the K4UBE3D4AB-MGCL is a low-power, double data rate synchronous DRAM designed for mobile and embedded applications. The LPDDR4X technology offers improved power efficiency and performance compared to its predecessors, making it suitable for devices like smartphones, tablets, and ultrabooks. Key features include lower operating voltages, higher data rates, and optimized power management to extend battery life in portable devices.

Manufacturer

The K4UBE3D4AB-MGCL is a part number for a semiconductor product manufactured by Samsung Electronics. Samsung is a South Korean multinational conglomerate known for its diverse range of products and services, including consumer electronics, semiconductors, telecommunications equipment, and digital media.
Samsung Electronics is a subsidiary of the Samsung Group, which is one of the largest businesses in South Korea and a major global player in multiple industries. The company is particularly renowned for its advancements and leadership in the semiconductor industry, producing memory chips, system LSI, and other key components used in a wide variety of electronic devices.
Samsung's semiconductor division is a significant part of its operations, contributing considerably to the company's revenue and global market influence. The company's semiconductors are used in products ranging from smartphones and computers to more specialized industrial and enterprise applications.

Package

The package type of K4UBE3D4AB-MGCL is a Ball Grid Array (BGA).

Frequently Asked Questions


Q: Does this K4UBE3D4AB-MGCL support a 2.133GHz clock frequency in LPDDR4X mode?
A: Yes, the memory is specified for a clock frequency of 2.133GHz, meeting high-speed data transfer requirements for LPDDR4X SDRAM.


Q: What is the operating temperature range for this Samsung 32Gbit LPDDR4X chip?
A: The operating temperature range is -25℃ to +85℃, suitable for industrial and consumer applications with moderate thermal environments.


Q: What voltage supply does the K4UBE3D4AB-MGCL require?
A: It requires a supply voltage between 570mV and 650mV, typical for low-power LPDDR4X memory designs.


Q: Is this component suitable for mobile or embedded system designs?
A: Yes, the 32Gbit density, FBGA-200 package, and low voltage (570-650mV) make it ideal for smartphones, tablets, and embedded systems.


Q: Can this memory operate reliably at high temperatures up to +85°C?
A: Yes, it is rated for operation up to +85°C, ensuring stable performance in high-temperature environments within the specified range.


Q: What is the memory format and density of part K4UBE3D4AB-MGCL?
A: It is an LPDDR4X SDRAM with a memory size of 32Gbit, providing high-density storage for bandwidth-intensive applications.


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