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LBSS138LT1G
+BOMMOSFETs
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メーカーオンセミコンダクター社
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メーカー品番 #LBSS138LT1G
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在庫状況8778
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
概要
Description
If LBSS138LT1G is a hypothetical course, it could cover foundational topics in its respective field, focusing on basic concepts, theories, and applications. The introduction might include an overview of key themes, objectives, and skills that students are expected to gain. Typically, such a course would outline the syllabus, grading criteria, and any prerequisites, along with providing essential resources and guidance for further study.
To provide a precise answer, more information on the institution or subject area would be needed, such as whether LBSS138LT1G pertains to a discipline like social sciences, technology, literature, etc. If you have access to a course catalog or syllabus, those would be valuable resources for understanding the specific content and objectives of LBSS138LT1G.
Equivalent
1. 2N7002 - A widely used N-channel MOSFET with similar specifications.
2. BSS138 - Another common equivalent with comparable characteristics.
3. NTR4003N - Offers similar performance for low-voltage applications.
4. 2N7002K - An alternative with matching features.
When choosing an equivalent, ensure to verify the specific electrical characteristics and package type to match your requirements.
Features
1. Package Type: It comes in a SOT-23 package, which is a small form factor suitable for compact designs.
2. Voltage Rating: The MOSFET has a drain-source voltage (V_DS) rating of 50V.
3. Current Rating: It supports a continuous drain current (I_D) of up to 0.22A, making it suitable for low current applications.
4. On-Resistance: The MOSFET features a low on-resistance (R_DS(on)) of about 3.5Ω at a V_GS of 10V, improving efficiency by reducing power loss.
5. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) is typically in the range of 1V to 2V.
6. High-Speed Switching: It is designed for fast switching applications, enhancing performance in digital circuits.
7. Thermal Performance: It has a maximum power dissipation of approximately 225mW at 25°C.
This MOSFET is ideal for use in low-power switching applications, signal processing, and as a general-purpose transistor in various electronic circuits.
Pinout
1. Gate (G): This pin controls the MOSFET's switching operation. By applying a voltage to the gate, you can control the flow of current between the drain and the source.
2. Source (S): This is the terminal through which the current enters the MOSFET. It is typically connected to the lower potential in a circuit.
3. Drain (D): This is the terminal through which the current exits the MOSFET. It is typically connected to the load or higher potential in a circuit.
The LBSS138LT1G is used in applications where efficient switching and small form factor are required, such as in portable devices and power management systems.