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M29W800DB70N6E
+BOMIC FLASH 8MBIT PARALLEL 48TSOP I
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メーカーマイクロンテクノロジー株式会社
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メーカー品番 #M29W800DB70N6E
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データシート M29W800DB70N6E DataSheet
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在庫状況7991
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Part Status | Obsolete |
| Base Product Number | M29W800 |
| DigiKey Programmable | Not Verified |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 8Mbit |
| Memory Organization | 1M x 8, 512K x 16 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 70ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package | 48-TFSOP (0.724", 18.40mm Width) |
| Supplier Device Package | 48-TSOP I |
| Packaging | Tray |
| Access Time | 70 ns |
概要
Description
This chip operates on a 70 ns access time, providing efficient read speeds. It supports dual operation modes, allowing for both parallel and serial programming, enhancing versatility in various applications. The M29W800DB70N6E uses a standard 32-pin TSOP (Thin Small Outline Package) for easy integration into circuit boards.
Key features include a wide voltage range for operation (2.7V to 3.6V), high endurance with up to 100,000 write/erase cycles, and data retention of up to 20 years. Its low power consumption makes it ideal for battery-operated devices. The chip's compatibility with industry-standard protocols ensures seamless integration into existing systems, making it a popular choice for consumer electronics, automotive applications, and industrial equipment.
Equivalent
Features
1. Memory Type: NOR Flash memory, providing fast read access times.
2. Density: 8 Mbits (1 Megabyte) with 8-bit data bus.
3. Interface: Parallel interface for easy integration with microcontrollers and digital systems.
4. Access Time: Fast access time of up to 70 ns.
5. Architecture: Supports the standard programming and erasing methods, including sector erase.
6. Endurance: Typically 10,000 erase cycles per sector.
7. Data Retention: Data retention of up to 20 years under specified conditions.
8. Power Supply: Operates at a voltage range of 2.7V to 3.6V, making it suitable for low-power applications.
9. Package Options: Available in various packages, including TSOP and FBGA, for flexibility in design.
This combination of features makes the M29W800DB70N6E suitable for a variety of applications, including embedded systems and consumer electronics.
Pinout
The device features a parallel interface for data transfer and includes the following key pins/functions:
- A0-A19: Address inputs for selecting memory locations.
- DQ0-DQ7: Data input/output pins for reading and writing data.
- VCC: Supply voltage.
- GND: Ground.
- NCE: Chip enable, active low.
- NWE: Write enable, active low.
- NRE: Read enable, active low.
- NWP: Write protect, active low.
- RY/BY: Ready/Busy indicator, signals the status of the memory operation.
This device is designed for high-speed and high-density applications, making it suitable for various embedded systems.
Manufacturer
Application
Package
Frequently Asked Questions
Q: What is the memory size and organization of the M29W800DB70N6E?
A: It is an 8Mbit NOR Flash memory, organized as 1M x 8 bits or 512K x 16 bits, selectable via byte/word mode.
Q: What is the access time and supply voltage range?
A: Access time is 70 ns, and the supply voltage ranges from 2.7V to 3.6V, suitable for low-power embedded designs.
Q: What interface does this Flash memory use?
A: It uses a parallel memory interface, common for direct connection to MCUs or SoCs with external bus controllers.
Q: What package and mounting type are available?
A: It comes in a 48-TFSOP (18.40mm width) surface-mount package, specifically 48-TSOP I, delivered in tray packaging.
Q: What is the operating temperature range?
A: The industrial temperature range is -40°C to +85°C (TA), ensuring reliable operation in harsh environments.
Q: Is the M29W800DB70N6E programmable via standard Flash algorithms?
A: Yes, it supports standard NOR Flash programming with a write cycle time of 70ns for word/page operations.