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MC33GD3100BEKR2
+BOMIC GATE DRVR HALF-BRIDGE 32SOIC
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メーカーパナソニック電子部品
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メーカー品番 #MC33GD3100BEKR2
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データシート MC33GD3100BEKR2 DataSheet
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在庫状況3911
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Part Status | Active |
| Driven Configuration | Half-Bridge |
| Channel Type | Single |
| Number of Drivers | 1 |
| Gate Type | IGBT, MOSFET (N-Channel) |
| Voltage - Supply | 5V |
| Current - Peak Output (Source, Sink) | 15A, 15A |
| Operating Temperature | -40°C ~ 125°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 32-BSSOP (0.295", 7.50mm Width) |
| Supplier Device Package | 32-SOIC |
| Base Product Number | MC33GD3100 |
| Grade | Automotive |
| Qualification | AEC-Q100 |
概要
Description
One of the key attributes of this IC is its high-voltage capability, supporting operations in systems with bus voltages up to 1200V. It also offers configurable gate drive currents, which allow for flexibility in controlling the switching characteristics of the connected power devices. The device is typically used in applications like electric vehicle powertrains, renewable energy systems, and motor drives. Its compact form factor and robust performance make it suitable for use in environments where space is limited and high reliability is required.
Equivalent
1. Infineon's 1EDC20I12MH or 1EDC40I12MH, which are IGBT gate drivers.
2. Texas Instruments' UCC21732-Q1, a functional safety isolated gate driver.
3. ON Semiconductor's NCP51820, a single-channel gate driver for automotive purposes.
Please verify specifications and compatibility before selecting, as exact equivalency depends on specific application requirements.
Features
1. High Voltage Capability: It supports high voltage applications with a breakdown voltage of up to 1200V.
2. Gate Drive Current: Capable of sourcing and sinking peak currents of 10A, making it suitable for fast switching applications.
3. Isolated Gate Drive: Provides galvanic isolation between the control and power stages, enhancing safety and reliability.
4. Protection Features: Includes under-voltage lockout (UVLO), desaturation detection, and active Miller clamping to protect against over-current and short-circuit conditions.
5. Wide Temperature Range: Operates effectively across a wide temperature range, making it suitable for harsh environments.
6. Programmable Dead Time: Allows configurable dead time to optimize switching performance and reduce power loss.
7. Fault Reporting: Features fault reporting pins for diagnostic purposes.
8. Compact Packaging: Available in a compact package, facilitating integration into various designs.
These features make the MC33GD3100BEKR2 ideal for applications like electric vehicle powertrains, renewable energy inverters, and industrial motor drives.
Pinout
- Pin Count: The device comes in a 24-pin package.
- Function: This gate driver is designed to provide efficient control and protection of IGBTs and SiC MOSFETs in high-voltage applications. Key features include:
- High current gate drive capability.
- Fault detection and reporting, such as over-temperature and under-voltage lockout.
- Configurable gate drive voltage and protection settings.
- Isolation to separate high-voltage and low-voltage domains.
- SPI interface for configuration and status monitoring.
This makes it suitable for applications in automotive and industrial environments where robust and efficient power management is necessary.