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MJD117T4G
+BOMTRANS PNP DARL 100V 2A DPAK
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メーカーオンセミコンダクター社
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メーカー品番 #MJD117T4G
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データシート MJD117T4G DataSheet
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パッケージ TO-252-3
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在庫状況13639
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Supplier | onsemi,Rochester Electronics, LLC |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Part Status | Active |
| Transistor Type | PNP - Darlington |
| Current - Collector(Ic)(Max) | 2 A |
| Voltage - Collector Emitter Breakdown(Max) | 100 V |
| Vce Saturation(Max) @ Ib Ic | 3V @ 40mA, 4A |
| Current - Collector Cutoff(Max) | 20µA |
| DC Current Gain(h FE)(Min) @ Ic Vce | 1000 @ 2A, 3V |
| Power - Max | 1.75 W |
| Frequency - Transition | 25MHz |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
概要
Description
"MJD117T4G" doesn't appear to be a widely recognized course, program, or topic as of my last update in October 2023. It might be an internal code or designation specific to an institution, organization, or a newly developed course or technology. To provide a meaningful introduction, you would typically need to know the context in which this term is used.
If MJD117T4G relates to a course, it could entail an introduction to its primary themes, objectives, and structure. For a technological or scientific concept, it would involve a brief overview of its purpose, applications, and significance in its respective field. Given its specificity, I recommend checking the originating source or institution for more detailed and accurate information.
If MJD117T4G relates to a course, it could entail an introduction to its primary themes, objectives, and structure. For a technological or scientific concept, it would involve a brief overview of its purpose, applications, and significance in its respective field. Given its specificity, I recommend checking the originating source or institution for more detailed and accurate information.
Equivalent
The MJD117T4G is a PNP power transistor commonly used for general-purpose amplification and switching applications. Equivalent products include:
1. TIP127 - A PNP power transistor with similar specifications.
2. BD140 - A medium-power PNP transistor, though with a slightly different current rating.
3. 2SB649 - Another PNP transistor alternative, depending on specific application needs.
Always ensure to compare electrical characteristics and package types before substituting.
1. TIP127 - A PNP power transistor with similar specifications.
2. BD140 - A medium-power PNP transistor, though with a slightly different current rating.
3. 2SB649 - Another PNP transistor alternative, depending on specific application needs.
Always ensure to compare electrical characteristics and package types before substituting.
Features
The MJD117T4G is a type of TVS (Transient Voltage Suppressor) diode, known for its function in protecting electronic circuits from voltage spikes. Here are some of its features:
1. Polarity: The device is unidirectional, meaning it only allows current to flow in one direction.
2. Power Dissipation: It typically has a power dissipation capacity around 400 watts for a 10/1000 µs pulse waveform.
3. Breakdown Voltage: The breakdown voltage usually falls between specific values, often around 117 volts, with tight tolerances.
4. Clamping Voltage: It offers a clamping voltage that limits the peak voltage during a transient event, often specified in its datasheet.
5. Low Leakage Current: It maintains a low leakage current when operating below breakdown voltage.
6. Response Time: The response time is extremely fast, typically in the picoseconds range, making it effective at transient suppression.
7. Package Type: Encased in a standard surface-mount package for easy integration into various PCB designs.
8. Temperature Range: Operates across a wide temperature range, making it suitable for various environmental conditions.
These features make the MJD117T4G ideal for protecting sensitive electronic components in various applications.
1. Polarity: The device is unidirectional, meaning it only allows current to flow in one direction.
2. Power Dissipation: It typically has a power dissipation capacity around 400 watts for a 10/1000 µs pulse waveform.
3. Breakdown Voltage: The breakdown voltage usually falls between specific values, often around 117 volts, with tight tolerances.
4. Clamping Voltage: It offers a clamping voltage that limits the peak voltage during a transient event, often specified in its datasheet.
5. Low Leakage Current: It maintains a low leakage current when operating below breakdown voltage.
6. Response Time: The response time is extremely fast, typically in the picoseconds range, making it effective at transient suppression.
7. Package Type: Encased in a standard surface-mount package for easy integration into various PCB designs.
8. Temperature Range: Operates across a wide temperature range, making it suitable for various environmental conditions.
These features make the MJD117T4G ideal for protecting sensitive electronic components in various applications.
Pinout
The MJD117T4G is a PNP bipolar junction transistor (BJT). It typically comes in a DPAK (TO-252) package. The pin count for this package is three, plus a tab for heat dissipation. The pin functions are as follows:
1. Pin 1 (Base): This pin is the control terminal for the transistor. A small current through the base controls a larger current flow between the collector and emitter.
2. Pin 2 (Collector): This is the pin where the main current flows from the collector to the emitter when the transistor is in the 'on' state.
3. Pin 3 (Emitter): The current flows out of this pin when the transistor is conducting.
4. Tab (Collector): The tab is electrically connected to the collector and is used for heat dissipation.
The MJD117T4G is used in various applications requiring high current and voltage handling, such as power amplification and switching.
1. Pin 1 (Base): This pin is the control terminal for the transistor. A small current through the base controls a larger current flow between the collector and emitter.
2. Pin 2 (Collector): This is the pin where the main current flows from the collector to the emitter when the transistor is in the 'on' state.
3. Pin 3 (Emitter): The current flows out of this pin when the transistor is conducting.
4. Tab (Collector): The tab is electrically connected to the collector and is used for heat dissipation.
The MJD117T4G is used in various applications requiring high current and voltage handling, such as power amplification and switching.
Manufacturer
The MJD117T4G is a transistor manufactured by ON Semiconductor. ON Semiconductor, now known as onsemi, is a semiconductor company that designs and manufactures a wide range of semiconductor components. They produce products for various applications, including automotive, industrial, cloud, and Internet of Things (IoT). Onsemi is recognized for its focus on energy-efficient electronics and offers solutions that help manage power efficiently in electronic devices.
Application
The MJD117T4G is a high-speed, low-power NPN transistor commonly used in a variety of applications. Its primary application areas include switching and amplification in electronic circuits. It is often employed in automotive electronics for controlling relays, solenoids, and other actuators. Additionally, it is used in power management systems, including power converters and voltage regulation circuits. The transistor is also suitable for use in industrial automation systems, audio amplifiers, and as a part of general-purpose signal processing. Its robust design makes it applicable in environments requiring reliable performance under different operational conditions.
Package
The MJD117T4G is a surface-mount package type, typically in a DPAK (TO-252) format, often used for power transistors and diodes in electronic circuits.
