仕様
| 属性 | 値 |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| TransistorType | PNP |
| Current-Collector(Ic)(Max) | 8 A |
| Voltage-CollectorEmitterBreakdown(Max) | 80 V |
| VceSaturation(Max)@IbIc | 1V @ 400mA, 8A |
| Current-CollectorCutoff(Max) | 1µA |
| DCCurrentGain(hFE)(Min)@IcVce | 40 @ 4A, 1V |
| Power-Max | 1.75 W |
| Frequency-Transition | 90MHz |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
概要
Description
"MJD45H11T4G" doesn’t correspond to any widely recognized topic, product, or concept as of my last update. It's possible that it's a code, model number, or acronym specific to a niche area, company, or new development post-October 2023. If it pertains to a specific field, you might want to provide more context or check the latest updates in related industry publications, company announcements, or databases.
Equivalent
The MJD45H11T4G is a NPN bipolar junction transistor (BJT). Equivalent products include the TIP45, TIP41C, and BD911 transistors. However, it is important to verify electrical specifications such as voltage, current, power ratings, and package type to ensure full compatibility for your specific application. Always consult the datasheets for detailed comparisons before selecting a substitute.
Features
The MJD45H11T4G is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. Key features include:
1. Collector-Emitter Voltage (Vceo): The maximum voltage the transistor can handle between the collector and emitter is typically around 45V.
2. Collector Current (Ic): It can handle continuous currents up to 10A, making it suitable for moderate power applications.
3. Power Dissipation (Pd): The device can dissipate power up to a certain limit, often around 75 watts, depending on the package and cooling conditions.
4. Gain (hFE): Provides a decent current gain, typically ranging from 20 to 100, useful for amplification purposes.
5. Package Type: Usually available in a TO-220 package, which supports efficient heat dissipation.
6. Temperature Range: Operates effectively within a wide temperature range, often from -55°C to 150°C.
These features make the MJD45H11T4G versatile for various electronic circuits requiring reliable switching and amplification.
1. Collector-Emitter Voltage (Vceo): The maximum voltage the transistor can handle between the collector and emitter is typically around 45V.
2. Collector Current (Ic): It can handle continuous currents up to 10A, making it suitable for moderate power applications.
3. Power Dissipation (Pd): The device can dissipate power up to a certain limit, often around 75 watts, depending on the package and cooling conditions.
4. Gain (hFE): Provides a decent current gain, typically ranging from 20 to 100, useful for amplification purposes.
5. Package Type: Usually available in a TO-220 package, which supports efficient heat dissipation.
6. Temperature Range: Operates effectively within a wide temperature range, often from -55°C to 150°C.
These features make the MJD45H11T4G versatile for various electronic circuits requiring reliable switching and amplification.
Pinout
The MJD45H11T4G is a power transistor, specifically a type of NPN bipolar junction transistor (BJT). It typically comes in a TO-252 package, also known as DPAK, which commonly has three pins. Here’s a concise description of its pin count and function:
1. Pin Count: The MJD45H11T4G has 3 pins.
2. Pin Functions:
- Pin 1: Base (B) - This is the control pin that modulates the transistor's conductivity.
- Pin 2: Collector (C) - This is the output pin through which the main current flows into the transistor.
- Pin 3: Emitter (E) - This is the output pin through which the current exits the transistor.
Additionally, the tab on the package often serves as an additional thermal and electrical connection to the collector. The MJD45H11T4G is used in applications requiring switching and amplification, providing a balance of speed and power handling suitable for various circuits.
1. Pin Count: The MJD45H11T4G has 3 pins.
2. Pin Functions:
- Pin 1: Base (B) - This is the control pin that modulates the transistor's conductivity.
- Pin 2: Collector (C) - This is the output pin through which the main current flows into the transistor.
- Pin 3: Emitter (E) - This is the output pin through which the current exits the transistor.
Additionally, the tab on the package often serves as an additional thermal and electrical connection to the collector. The MJD45H11T4G is used in applications requiring switching and amplification, providing a balance of speed and power handling suitable for various circuits.
Manufacturer
The MJD45H11T4G is manufactured by ON Semiconductor. ON Semiconductor, now known as onsemi, is a company that specializes in designing and manufacturing semiconductor components for a wide range of electronic devices and applications. They provide solutions for power management, automotive, industrial, cloud, medical, and Internet of Things (IoT) sectors, among others. The company focuses on producing components that enhance energy efficiency, improve performance, and enable advancements in technology across various industries.
Application
The MJD45H11T4G is a power transistor, specifically an NPN bipolar junction transistor (BJT) designed for medium power applications. It is commonly used in:
1. Switching Applications: Ideal for high-speed switching due to its fast switching characteristics.
2. Amplifiers: Suitable for audio and signal amplification in consumer electronics.
3. Motor Control: Used in controlling small motors and actuators.
4. Power Management: Plays a role in voltage regulation and power conversion circuits.
5. Automotive Electronics: Employed in various electronic control units (ECUs) for its reliability.
These applications benefit from its high voltage and current handling capabilities, as well as its robustness in diverse environments.
1. Switching Applications: Ideal for high-speed switching due to its fast switching characteristics.
2. Amplifiers: Suitable for audio and signal amplification in consumer electronics.
3. Motor Control: Used in controlling small motors and actuators.
4. Power Management: Plays a role in voltage regulation and power conversion circuits.
5. Automotive Electronics: Employed in various electronic control units (ECUs) for its reliability.
These applications benefit from its high voltage and current handling capabilities, as well as its robustness in diverse environments.
Package
The MJD45H11T4G is a power transistor in a TO-220 package. This type of package is commonly used for power semiconductors, providing efficient thermal management and easy mounting onto heat sinks, making them suitable for various power electronic applications.
