MJE243G

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MJE243G

+BOM

TRANS NPN 100V 4A TO-126

  • メーカーオンセミコンダクター社

  • メーカー品番 #MJE243G

  • 在庫状況3985

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仕様

属性
Part Status Active
Base Product Number MJE243
Transistor Type NPN
Current - Collector (Ic) (Max) 4 A
Voltage - Collector Emitter Breakdown (Max) 100 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 100mA, 1A
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (h FE) (Min) @ Ic, Vce 40 @ 200mA, 1V
Power - Max 1.5 W
Frequency - Transition 40MHz
Operating Temperature -65°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Supplier Device Package TO-126
Packaging Bulk

概要

Description

MJE243G is likely a course code, but without specific context, the details about the course can vary. Generally, such courses are often found in academic institutions and may relate to a specific subject area such as engineering, mathematics, or another technical field. The course might cover intermediate to advanced topics pertinent to its subject matter, building upon foundational concepts and introducing students to more complex theories and applications. It could include lectures, practical sessions, and assessments designed to deepen understanding and skills. Typically, students are expected to have some prerequisite knowledge or have completed introductory courses to enroll. The course may also involve projects or lab work to provide hands-on experience, fostering a comprehensive understanding of the material. For specific information on MJE243G, including detailed curriculum content, it would be best to consult the course syllabus or contact the educational institution offering the course.

Equivalent

The MJE243G is an NPN bipolar junction transistor. Equivalent products include the TIP31C, BD243C, and 2N6488, which have similar specifications. These transistors generally support similar voltage, current ratings, and package types, making them suitable replacements in most applications. Always verify the specific requirements of your circuit before substituting components.

Features

The MJE243G is a NPN bipolar junction transistor primarily used for amplification and switching applications. Here are some of its key features:
1. Type: NPN Bipolar Junction Transistor.
2. Voltage Rating: The collector-emitter voltage (V_CE) can be up to 100V.
3. Current Rating: The collector current (I_C) is rated at 4A.
4. Power Dissipation: It can dissipate up to 40W of power.
5. Gain: The DC current gain (h_FE) typically ranges from 15 to 75, depending on the model and specific conditions of use.
6. Package Type: Generally available in TO-220 package, suitable for through-hole mounting.
7. Application: Used in power amplification, switching, and general-purpose amplification.
8. Temperature: The operating junction temperature range is up to 150°C.
9. Complementary PNP: The complementary PNP transistor is MJE253G.
These features make the MJE243G suitable for various electronic circuits where moderate power handling and switching capabilities are required.

Pinout

The MJE243G is a bipolar junction transistor (BJT) in a TO-220 package. It is an NPN transistor designed for general-purpose amplification and switching applications. The MJE243G has three pins:
1. Pin 1 (Base): This pin is used to control the transistor's operation. A small current entering the base allows a larger current to flow from the collector to the emitter.
2. Pin 2 (Collector): This pin is connected to the main load. When the transistor is turned on, the current flows from the collector to the emitter.
3. Pin 3 (Emitter): This is the output pin through which the current exits the transistor.
The MJE243G is used in various electronic circuits for amplifying or switching signals. It features a high collector current rating and good current gain, making it suitable for medium power applications.

Manufacturer

The MJE243G is manufactured by ON Semiconductor, which is a semiconductor company. ON Semiconductor, now known as onsemi, is a leading supplier in the semiconductor industry, providing a wide array of products and solutions, including power and signal management, logic, discrete, and custom semiconductor solutions. The company focuses on automotive, industrial, and various other sectors, aiming to drive energy-efficient innovations, empower customers, and promote sustainable practices.

Application

The MJE243G is a NPN bipolar junction transistor commonly used in various electronic applications. Its main application areas include:
1. Power Amplifiers: Used for audio and RF power amplification due to its ability to handle high voltage and current.
2. Switching Circuits: Serves in switch-mode power supplies and other switching applications due to its fast switching capabilities.
3. Motor Control: Utilized in controlling motors in industrial and consumer electronics.
4. Voltage Regulation: Employed in voltage regulator circuits for maintaining constant output voltage.
5. General-Purpose Amplification: Ideal for a range of amplifier circuits in both consumer and industrial devices.
These characteristics make it suitable for diverse electronic solutions requiring reliable performance.

Package

The MJE243G is a NPN bipolar junction transistor, typically housed in a TO-225 package. This package type is designed for medium power applications and features a plastic encapsulation with three leads for easy mounting on printed circuit boards.