仕様
| 属性 | 値 |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| FETType | P-Channel |
| Voltage-Breakdown(V(BR)GSS) | 30 V |
| Current-Drain(Idss)@Vds(Vgs=0) | 1.5 mA @ 15 V |
| Voltage-Cutoff(VGSoff)@Id | 800 mV @ 10 nA |
| InputCapacitance(Ciss)(Max)@Vds | 11pF @ 10V (VGS) |
| Resistance-RDS(On) | 300 Ohms |
| Power-Max | 225 mW |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | TO-236-3, SC-59, SOT-23-3 |
概要
Description
The MMBFJ177LT1G is a P-Channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed by ON Semiconductor. It is typically used in electronic circuits for switching and amplification purposes. This particular MOSFET is known for its small signal capabilities, making it suitable for applications requiring low power consumption and compact design.
Key features of the MMBFJ177LT1G include its low on-resistance and fast switching speed, which enhance performance in various applications. It is housed in a SOT-23 package, which is a popular choice in surface-mount technology due to its small size and ease of handling on printed circuit boards (PCBs).
The device operates with a maximum drain-source voltage (V_DS) of around -30 volts and a continuous drain current (I_D) of about -200 mA, making it appropriate for low to medium power applications. It is often utilized in analog circuits, signal processing, and as a switch in battery-powered devices. The MMBFJ177LT1G’s efficiency and reliability make it a common component in consumer electronics and industrial applications.
Key features of the MMBFJ177LT1G include its low on-resistance and fast switching speed, which enhance performance in various applications. It is housed in a SOT-23 package, which is a popular choice in surface-mount technology due to its small size and ease of handling on printed circuit boards (PCBs).
The device operates with a maximum drain-source voltage (V_DS) of around -30 volts and a continuous drain current (I_D) of about -200 mA, making it appropriate for low to medium power applications. It is often utilized in analog circuits, signal processing, and as a switch in battery-powered devices. The MMBFJ177LT1G’s efficiency and reliability make it a common component in consumer electronics and industrial applications.
Equivalent
The MMBFJ177LT1G is a P-channel JFET. Equivalent products include:
1. J177 from various manufacturers like Vishay or Onsemi.
2. J175 or J176, which may have similar characteristics but different voltage ratings.
3. 2N5460, 2N5461, and 2N5462, which are commonly used P-channel JFETs with comparable parameters.
Ensure to check the datasheets to match specific parameters such as Vgs(off) and Idss for compatibility.
1. J177 from various manufacturers like Vishay or Onsemi.
2. J175 or J176, which may have similar characteristics but different voltage ratings.
3. 2N5460, 2N5461, and 2N5462, which are commonly used P-channel JFETs with comparable parameters.
Ensure to check the datasheets to match specific parameters such as Vgs(off) and Idss for compatibility.
Features
The MMBFJ177LT1G is a small-signal P-channel JFET (Junction Field Effect Transistor) designed for various electronic applications. Key features include:
1. Package: It comes in a SOT-23 surface-mount package, ideal for compact circuit designs.
2. Drain-Source Voltage (V_DS): It can handle a maximum V_DS of -25V.
3. Gate-Source Voltage (V_GS): Maximum V_GS is -25V.
4. Drain Current (I_D): It supports a continuous drain current of up to -50 mA.
5. Low Noise: Offers low noise characteristics, making it suitable for audio and RF applications.
6. Low Cutoff Voltage: Typically operates with a low gate-source cutoff voltage, enhancing performance in low-power circuits.
7. High Input Impedance: Features high input impedance, which minimizes the loading effect on preceding stages.
8. Temperature Range: Operates efficiently over a wide temperature range.
These attributes make the MMBFJ177LT1G suitable for amplifying or switching purposes in various analog circuits.
1. Package: It comes in a SOT-23 surface-mount package, ideal for compact circuit designs.
2. Drain-Source Voltage (V_DS): It can handle a maximum V_DS of -25V.
3. Gate-Source Voltage (V_GS): Maximum V_GS is -25V.
4. Drain Current (I_D): It supports a continuous drain current of up to -50 mA.
5. Low Noise: Offers low noise characteristics, making it suitable for audio and RF applications.
6. Low Cutoff Voltage: Typically operates with a low gate-source cutoff voltage, enhancing performance in low-power circuits.
7. High Input Impedance: Features high input impedance, which minimizes the loading effect on preceding stages.
8. Temperature Range: Operates efficiently over a wide temperature range.
These attributes make the MMBFJ177LT1G suitable for amplifying or switching purposes in various analog circuits.
Pinout
The MMBFJ177LT1G is a P-channel JFET (Junction Field Effect Transistor) used primarily for switching and amplification applications. It typically comes in a SOT-23 package, which features three pins. The pin configuration is as follows:
1. Gate (G): Controls the flow of current between the source and the drain.
2. Source (S): The terminal through which the charge carriers enter the JFET.
3. Drain (D): The terminal through which the charge carriers exit the JFET.
In operation, a voltage applied to the gate controls the current flow between the source and the drain. This JFET is known for its high input impedance and low noise, making it suitable for high-frequency amplification and switching applications.
1. Gate (G): Controls the flow of current between the source and the drain.
2. Source (S): The terminal through which the charge carriers enter the JFET.
3. Drain (D): The terminal through which the charge carriers exit the JFET.
In operation, a voltage applied to the gate controls the current flow between the source and the drain. This JFET is known for its high input impedance and low noise, making it suitable for high-frequency amplification and switching applications.
Manufacturer
The MMBFJ177LT1G is manufactured by ON Semiconductor, now known as onsemi. onsemi is a leading semiconductor supplier that specializes in a wide array of products, including power and signal management, logic, discrete, and custom devices. The company primarily serves markets such as automotive, industrial, cloud, and the Internet of Things (IoT).
onsemi focuses on providing energy-efficient innovations, which contribute to reducing global energy use. They offer solutions that enable smarter, safer, and more sustainable electronic designs. With a commitment to delivering high-performance and reliable semiconductor products, onsemi plays a significant role in the technological advancement of various industries.
onsemi focuses on providing energy-efficient innovations, which contribute to reducing global energy use. They offer solutions that enable smarter, safer, and more sustainable electronic designs. With a commitment to delivering high-performance and reliable semiconductor products, onsemi plays a significant role in the technological advancement of various industries.
Application
The MMBFJ177LT1G is a P-channel JFET designed for general-purpose amplification and switching applications. Key application areas include:
1. Signal Amplification: Used in amplifying weak audio and radio frequency signals.
2. Switching Circuits: Suitable for use in various switching applications due to its fast switching speeds.
3. Analog Circuits: Useful in analog signal processing, such as in filters and oscillators.
4. Impedance Buffering: Acts as a buffer to match impedances between different circuit stages.
5. Voltage-Controlled Resistors: Can function in circuits requiring voltage-controlled resistive elements.
These applications leverage the JFET’s high input impedance, low noise, and reliable performance.
1. Signal Amplification: Used in amplifying weak audio and radio frequency signals.
2. Switching Circuits: Suitable for use in various switching applications due to its fast switching speeds.
3. Analog Circuits: Useful in analog signal processing, such as in filters and oscillators.
4. Impedance Buffering: Acts as a buffer to match impedances between different circuit stages.
5. Voltage-Controlled Resistors: Can function in circuits requiring voltage-controlled resistive elements.
These applications leverage the JFET’s high input impedance, low noise, and reliable performance.
Package
The MMBFJ177LT1G is a JFET transistor encapsulated in a SOT-23 package, which is a small, surface-mount package type commonly used for semiconductor devices.
