仕様
| 属性 | 値 |
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk,Bulk |
| ProductStatus | Active |
| TransistorType | NPN |
| Current-Collector(Ic)(Max) | 600 mA |
| Voltage-CollectorEmitterBreakdown(Max) | 40 V |
| VceSaturation(Max)@IbIc | 750mV @ 50mA, 500mA |
| DCCurrentGain(hFE)(Min)@IcVce | 100 @ 150mA, 1V |
| Power-Max | 300 mW |
| Frequency-Transition | 250MHz |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | TO-236-3, SC-59, SOT-23-3 |
概要
Description
The MMBT4401LT1G is a general-purpose NPN bipolar junction transistor (BJT) commonly used in amplifier and switching applications. Manufactured by ON Semiconductor, it's designed for low power, low to medium current, and low to medium voltage applications. This transistor is suitable for use in a wide range of applications, including signal amplification and switching in electronic circuits.
Key specifications include a maximum collector current (Ic) of 600 mA, a collector-emitter voltage (Vceo) of 40V, and a power dissipation of 625 mW. It features a transition frequency of around 250 MHz, making it suitable for high-frequency applications. The device is housed in a small SOT-23 surface-mount package, which is ideal for compact circuit designs.
The MMBT4401LT1G offers good gain characteristics, typically with a DC current gain (hFE) ranging from 100 to 300. Its thermal and electrical stability make it a reliable choice for various applications in consumer electronics, telecommunications, and industrial sectors.
Key specifications include a maximum collector current (Ic) of 600 mA, a collector-emitter voltage (Vceo) of 40V, and a power dissipation of 625 mW. It features a transition frequency of around 250 MHz, making it suitable for high-frequency applications. The device is housed in a small SOT-23 surface-mount package, which is ideal for compact circuit designs.
The MMBT4401LT1G offers good gain characteristics, typically with a DC current gain (hFE) ranging from 100 to 300. Its thermal and electrical stability make it a reliable choice for various applications in consumer electronics, telecommunications, and industrial sectors.
Equivalent
The MMBT4401LT1G is a general-purpose NPN bipolar junction transistor. Equivalent products include the 2N4401, 2N3904, and BC547, among others. When selecting an equivalent, ensure that the key parameters like voltage, current, gain, and package match or exceed the requirements of your application. Always verify the specifications from the manufacturer's datasheet to ensure compatibility.
Features
The MMBT4401LT1G is a general-purpose NPN bipolar junction transistor (BJT) designed for switching and amplification applications. Key features include:
1. Collector-Emitter Voltage (Vceo): 40V, allowing for moderate voltage operations.
2. Collector Current (Ic): 600mA, suitable for various low to medium current applications.
3. Power Dissipation: 625mW, providing reasonable power handling in compact circuits.
4. Current Gain (hFE): Typically ranges from 100 to 300, ensuring good amplification capabilities.
5. Saturation Voltage: Low Vce(sat) for efficient switching performance.
6. Frequency: High transition frequency (fT) around 150MHz, making it suitable for high-speed operations.
7. Small Package: Available in a SOT-23 package, which is ideal for space-constrained designs.
8. Temperature Range: Operates effectively in a range from -55°C to +150°C, suitable for various environmental conditions.
9. RoHS Compliance: Environmentally friendly with lead-free construction.
These attributes make the MMBT4401LT1G versatile for use in digital circuits, signal processing, and other electronic applications.
1. Collector-Emitter Voltage (Vceo): 40V, allowing for moderate voltage operations.
2. Collector Current (Ic): 600mA, suitable for various low to medium current applications.
3. Power Dissipation: 625mW, providing reasonable power handling in compact circuits.
4. Current Gain (hFE): Typically ranges from 100 to 300, ensuring good amplification capabilities.
5. Saturation Voltage: Low Vce(sat) for efficient switching performance.
6. Frequency: High transition frequency (fT) around 150MHz, making it suitable for high-speed operations.
7. Small Package: Available in a SOT-23 package, which is ideal for space-constrained designs.
8. Temperature Range: Operates effectively in a range from -55°C to +150°C, suitable for various environmental conditions.
9. RoHS Compliance: Environmentally friendly with lead-free construction.
These attributes make the MMBT4401LT1G versatile for use in digital circuits, signal processing, and other electronic applications.
Pinout
The MMBT4401LT1G is an NPN bipolar junction transistor (BJT) commonly used for general-purpose amplification and switching applications. It is a surface-mount device housed in a SOT-23 package. The transistor has three pins:
1. Pin 1 - Base (B): This is the control pin, where a small current is applied to switch the transistor on and allow current to flow between the collector and emitter.
2. Pin 2 - Emitter (E): This pin emits electrons (for an NPN transistor), allowing current to flow out. It is typically connected to the ground or a lower voltage potential.
3. Pin 3 - Collector (C): This is the pin through which the main current flows from collector to emitter when the transistor is in the "on" state.
The MMBT4401LT1G is suitable for low-power applications due to its compact package and is often used in signal processing, amplification, and low-current switching applications.
1. Pin 1 - Base (B): This is the control pin, where a small current is applied to switch the transistor on and allow current to flow between the collector and emitter.
2. Pin 2 - Emitter (E): This pin emits electrons (for an NPN transistor), allowing current to flow out. It is typically connected to the ground or a lower voltage potential.
3. Pin 3 - Collector (C): This is the pin through which the main current flows from collector to emitter when the transistor is in the "on" state.
The MMBT4401LT1G is suitable for low-power applications due to its compact package and is often used in signal processing, amplification, and low-current switching applications.
Manufacturer
The MMBT4401LT1G is manufactured by ON Semiconductor, which is now known as onsemi. Onsemi is a semiconductor supplier company that specializes in energy-efficient electronics. The company provides a wide range of products, including power and signal management, logic, discrete, and custom devices for automotive, communications, computing, consumer electronics, industrial, LED lighting, medical, military/aerospace, and power applications. Onsemi is known for its focus on innovation and providing solutions that help engineers address their design challenges in a wide array of systems and products.
Application
The MMBT4401LT1G is a general-purpose NPN bipolar junction transistor (BJT) used in various electronic applications. Its primary application areas include:
1. Switching Applications: Used in switching circuits due to its fast switching speed.
2. Amplification: Ideal for small-signal amplification in audio or low-frequency applications.
3. Signal Processing: Employed in various signal processing circuits for its reliability and efficiency.
4. Drive Transistors: Used to drive loads in simple motor or relay control circuits.
5. Oscillators and Timers: Utilized in oscillator circuits or timing applications.
6. Consumer Electronics: Found in general-purpose circuits within consumer devices.
Its versatility makes it suitable for use in educational projects and prototyping.
1. Switching Applications: Used in switching circuits due to its fast switching speed.
2. Amplification: Ideal for small-signal amplification in audio or low-frequency applications.
3. Signal Processing: Employed in various signal processing circuits for its reliability and efficiency.
4. Drive Transistors: Used to drive loads in simple motor or relay control circuits.
5. Oscillators and Timers: Utilized in oscillator circuits or timing applications.
6. Consumer Electronics: Found in general-purpose circuits within consumer devices.
Its versatility makes it suitable for use in educational projects and prototyping.
Package
The MMBT4401LT1G is a surface-mount NPN bipolar junction transistor (BJT) packaged in a SOT-23 configuration, which is commonly used for switching and amplification applications in compact electronic devices.
