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TRANS PNP 150V 0.6A SOT23-3
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メーカーアナログ・デバイセズ
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メーカー品番 #MMBT5401-7-F
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データシート MMBT5401-7-F DataSheet
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パッケージ TO-236-3
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在庫状況12204
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Supplier | Diodes Incorporated |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101 |
| Part Status | Active |
| Transistor Type | PNP |
| Current - Collector(Ic)(Max) | 600 mA |
| Voltage - Collector Emitter Breakdown(Max) | 150 V |
| Vce Saturation(Max) @ Ib Ic | 500mV @ 5mA, 50mA |
| Current - Collector Cutoff(Max) | 50nA (ICBO) |
| DC Current Gain(h FE)(Min) @ Ic Vce | 60 @ 10mA, 5V |
| Power - Max | 300 mW |
| Frequency - Transition | 300MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
概要
Description
The MMBT5401-7-F is a PNP bipolar junction transistor commonly used in general-purpose amplification and switching applications. Manufactured by companies like Diodes Incorporated, this transistor falls under the small signal transistor category and is known for its reliability and efficiency in electronic circuits.
Key specifications of the MMBT5401-7-F include a maximum collector-emitter voltage (Vce) of -150V, a maximum collector current (Ic) of -600mA, and a power dissipation of 350mW. It features a DC current gain (hFE) typically ranging from 30 to 240, making it suitable for various amplification tasks.
The transistor is housed in a standard SOT-23 package, which is a surface-mount device (SMD) package well-suited for compact designs. This package type enables ease of integration into modern printed circuit boards (PCBs).
MMBT5401-7-F is ideal for electronic projects requiring efficient and compact solutions. Its wide range of applications includes signal processing, switching, and amplification in consumer electronics, industrial equipment, and communication devices.
Key specifications of the MMBT5401-7-F include a maximum collector-emitter voltage (Vce) of -150V, a maximum collector current (Ic) of -600mA, and a power dissipation of 350mW. It features a DC current gain (hFE) typically ranging from 30 to 240, making it suitable for various amplification tasks.
The transistor is housed in a standard SOT-23 package, which is a surface-mount device (SMD) package well-suited for compact designs. This package type enables ease of integration into modern printed circuit boards (PCBs).
MMBT5401-7-F is ideal for electronic projects requiring efficient and compact solutions. Its wide range of applications includes signal processing, switching, and amplification in consumer electronics, industrial equipment, and communication devices.
Equivalent
The MMBT5401-7-F is a PNP bipolar junction transistor commonly used for switching and amplification. Equivalent products include:
1. MMBT5401 (various manufacturers)
2. 2N5401 (through-hole package)
3. BC556 (for similar applications, though slightly different specifications)
4. KSA5401 (Fairchild/ON Semiconductor)
5. BC557 (for general-purpose applications)
Always check datasheets for exact specifications to ensure compatibility in your specific application.
1. MMBT5401 (various manufacturers)
2. 2N5401 (through-hole package)
3. BC556 (for similar applications, though slightly different specifications)
4. KSA5401 (Fairchild/ON Semiconductor)
5. BC557 (for general-purpose applications)
Always check datasheets for exact specifications to ensure compatibility in your specific application.
Features
The MMBT5401-7-F is a PNP bipolar junction transistor (BJT) commonly used in general-purpose switching and amplification applications. Key features of this component include:
1. Polarity: PNP, meaning the transistor is 'on' when its base is low relative to the emitter.
2. Collector-Emitter Voltage (Vceo): 150V, indicating the maximum voltage the transistor can handle between collector and emitter.
3. Collector Current (Ic): 600mA, which is the maximum continuous current it can conduct from collector to emitter.
4. Power Dissipation: 350mW, representing the maximum power it can dissipate without damage.
5. Transition Frequency (fT): Approximately 100MHz, indicating the frequency at which the transistor can operate effectively.
6. Package: SOT-23, a small surface-mount package suitable for compact circuit designs.
7. Gain (hFE): Typical DC current gain ranges from 100 to 300, affecting amplification capability.
These features make it suitable for small-signal amplification and low-power switching applications in various electronic circuits.
1. Polarity: PNP, meaning the transistor is 'on' when its base is low relative to the emitter.
2. Collector-Emitter Voltage (Vceo): 150V, indicating the maximum voltage the transistor can handle between collector and emitter.
3. Collector Current (Ic): 600mA, which is the maximum continuous current it can conduct from collector to emitter.
4. Power Dissipation: 350mW, representing the maximum power it can dissipate without damage.
5. Transition Frequency (fT): Approximately 100MHz, indicating the frequency at which the transistor can operate effectively.
6. Package: SOT-23, a small surface-mount package suitable for compact circuit designs.
7. Gain (hFE): Typical DC current gain ranges from 100 to 300, affecting amplification capability.
These features make it suitable for small-signal amplification and low-power switching applications in various electronic circuits.
Pinout
The MMBT5401-7-F is a PNP bipolar junction transistor (BJT) encapsulated in a SOT-23 package. It has three pins:
1. Emitter (E)
2. Base (B)
3. Collector (C)
The primary function of the MMBT5401-7-F is to amplify current, making it suitable for switching and amplification applications. It can handle a maximum collector current of 600 mA and a collector-emitter voltage of up to 150 V. The compact SOT-23 package makes it ideal for surface-mount technology (SMT) applications where space is a constraint.
1. Emitter (E)
2. Base (B)
3. Collector (C)
The primary function of the MMBT5401-7-F is to amplify current, making it suitable for switching and amplification applications. It can handle a maximum collector current of 600 mA and a collector-emitter voltage of up to 150 V. The compact SOT-23 package makes it ideal for surface-mount technology (SMT) applications where space is a constraint.
Manufacturer
The MMBT5401-7-F is manufactured by Diodes Incorporated. Diodes Incorporated is a global manufacturer and supplier of high-quality application-specific standard products within the broad discrete, logic, analog, and mixed-signal semiconductor markets. The company serves diverse industries, including consumer electronics, computing, communications, industrial, and automotive sectors. Diodes Incorporated is known for its focus on providing efficient and reliable electronic components that meet the needs of modern technology applications.
Application
The MMBT5401-7-F is a PNP bipolar junction transistor commonly used in switching and amplification applications. Its primary application areas include:
1. Signal Amplification: Used in audio amplifiers and other signal processing circuits to amplify weak signals.
2. Switching: Suitable for low-power switching applications, such as driving small loads like LEDs or relays.
3. Voltage Regulation: Functions as a regulator or current limiter in power supply circuits.
4. Oscillator Circuits: Employed in oscillator designs due to its switching capabilities.
5. General-Purpose Circuits: Used in various consumer electronics for general amplification or switching tasks.
Its compact size makes it ideal for space-constrained applications.
1. Signal Amplification: Used in audio amplifiers and other signal processing circuits to amplify weak signals.
2. Switching: Suitable for low-power switching applications, such as driving small loads like LEDs or relays.
3. Voltage Regulation: Functions as a regulator or current limiter in power supply circuits.
4. Oscillator Circuits: Employed in oscillator designs due to its switching capabilities.
5. General-Purpose Circuits: Used in various consumer electronics for general amplification or switching tasks.
Its compact size makes it ideal for space-constrained applications.
Package
The MMBT5401-7-F is a PNP transistor housed in a SOT-23 package. This package type is a small surface-mount package commonly used for compact electronic components.
