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MMBTA06-7-F
+BOMTRANS NPN 80V 0.5A SOT23-3
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メーカーアナログ・デバイセズ
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メーカー品番 #MMBTA06-7-F
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データシート MMBTA06-7-F DataSheet
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パッケージ TO-236-3
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在庫状況10784
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Supplier | Diodes Incorporated |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| Transistor Type | NPN |
| Current - Collector(Ic)(Max) | 500 mA |
| Voltage - Collector Emitter Breakdown(Max) | 80 V |
| Vce Saturation(Max) @ Ib Ic | 250mV @ 10mA, 100mA |
| Current - Collector Cutoff(Max) | 100nA |
| DC Current Gain(h FE)(Min) @ Ic Vce | 100 @ 100mA, 1V |
| Power - Max | 300 mW |
| Frequency - Transition | 100MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
概要
Description
MMBTA06-7-F refers to a specific type of bipolar junction transistor (BJT), which is a semiconductor device used to amplify or switch electronic signals. This particular model is designed for general-purpose amplification and switching applications. It is part of the MMBT series, where "MMBT" typically indicates a surface-mount package, suitable for high-density circuit boards.
The "A06" and "7" in the designation refer to specific characteristics like voltage, current ratings, and gain bandwidth, which are crucial for determining the appropriate application scenarios. The "F" likely designates a specific variant or supplier specification.
BJTs like the MMBTA06-7-F have three layers of semiconductor material that form two PN junctions, and they come in two types: NPN and PNP. The MMBTA06-7-F is likely an NPN transistor, which means it allows current flow when a positive voltage is applied to the base relative to the emitter.
These transistors are commonly used in signal amplification, switching, and in various electronic circuits, including radios, televisions, and other communication devices.
The "A06" and "7" in the designation refer to specific characteristics like voltage, current ratings, and gain bandwidth, which are crucial for determining the appropriate application scenarios. The "F" likely designates a specific variant or supplier specification.
BJTs like the MMBTA06-7-F have three layers of semiconductor material that form two PN junctions, and they come in two types: NPN and PNP. The MMBTA06-7-F is likely an NPN transistor, which means it allows current flow when a positive voltage is applied to the base relative to the emitter.
These transistors are commonly used in signal amplification, switching, and in various electronic circuits, including radios, televisions, and other communication devices.
Equivalent
The MMBTA06-7-F is an NPN Bipolar Junction Transistor (BJT) used in various general-purpose applications. Equivalent products include:
1. 2N3904
2. BC547
3. PN2222A
4. MPSA06
Ensure to verify specifications such as voltage, current, and package type to ensure compatibility with your specific application.
1. 2N3904
2. BC547
3. PN2222A
4. MPSA06
Ensure to verify specifications such as voltage, current, and package type to ensure compatibility with your specific application.
Features
The MMBTA06-7-F is a small-signal NPN transistor manufactured by Diodes Incorporated. Key features of this transistor include:
1. Package Type: It comes in a SOT-23 package, which is a small surface-mount package ideal for space-constrained applications.
2. Collector-Emitter Voltage (Vceo): It has a maximum Vceo of 80V, allowing it to handle moderate voltage applications.
3. Collector Current (Ic): The device can support a continuous collector current of up to 500mA.
4. Power Dissipation: It has a power dissipation rating of 350mW, suitable for low to moderate power applications.
5. Current Gain (hFE): The transistor features a current gain (hFE) range typically between 100 to 300, providing moderate amplification.
6. High Switching Speed: It is designed for fast switching, making it suitable for high-speed operations.
7. Temperature Range: The MMBTA06-7-F operates within a temperature range of -55°C to +150°C, offering reliability in varied environmental conditions.
These features make it well-suited for amplifier and switching applications in consumer electronics, industrial, and automotive sectors.
1. Package Type: It comes in a SOT-23 package, which is a small surface-mount package ideal for space-constrained applications.
2. Collector-Emitter Voltage (Vceo): It has a maximum Vceo of 80V, allowing it to handle moderate voltage applications.
3. Collector Current (Ic): The device can support a continuous collector current of up to 500mA.
4. Power Dissipation: It has a power dissipation rating of 350mW, suitable for low to moderate power applications.
5. Current Gain (hFE): The transistor features a current gain (hFE) range typically between 100 to 300, providing moderate amplification.
6. High Switching Speed: It is designed for fast switching, making it suitable for high-speed operations.
7. Temperature Range: The MMBTA06-7-F operates within a temperature range of -55°C to +150°C, offering reliability in varied environmental conditions.
These features make it well-suited for amplifier and switching applications in consumer electronics, industrial, and automotive sectors.
Pinout
The MMBTA06-7-F is a NPN bipolar junction transistor (BJT) commonly used in various electronic applications. It is housed in a small SOT-23 package, which is a surface-mount package with three pins. The pin configuration for the MMBTA06-7-F is as follows:
1. Pin 1: Emitter (E)
2. Pin 2: Base (B)
3. Pin 3: Collector (C)
The primary function of the MMBTA06-7-F is to amplify current. It is designed for use in general-purpose switching and amplification applications. The transistor can handle a maximum collector current of 500 mA and a maximum collector-emitter voltage of 80 V. Its compact size and reliable performance make it suitable for use in compact or densely populated circuit boards.
1. Pin 1: Emitter (E)
2. Pin 2: Base (B)
3. Pin 3: Collector (C)
The primary function of the MMBTA06-7-F is to amplify current. It is designed for use in general-purpose switching and amplification applications. The transistor can handle a maximum collector current of 500 mA and a maximum collector-emitter voltage of 80 V. Its compact size and reliable performance make it suitable for use in compact or densely populated circuit boards.
Manufacturer
The MMBTA06-7-F is manufactured by Diodes Incorporated. Diodes Incorporated is a global semiconductor manufacturer and supplier that focuses on discrete, logic, analog, and mixed-signal semiconductor markets. The company provides a broad range of products including diodes, rectifiers, transistors, MOSFETs, protection devices, functional specific arrays, amplifiers, and power management devices. Diodes Incorporated serves diverse markets such as consumer electronics, computing, communications, industrial, and automotive industries. Known for its robust product portfolio and commitment to high-quality and innovative solutions, Diodes Incorporated plays a key role in the semiconductor industry, catering to a wide range of applications and customer needs.
Application
The MMBTA06-7-F is a small-signal NPN bipolar junction transistor. Its application areas include amplification and switching in electronic circuits. It is commonly used in low-power audio amplifiers, signal processing, and as a driver in applications like LED indicators and relays. The transistor is also suitable for small general-purpose DC switching and amplification tasks in consumer electronics, computer hardware, and communication devices. Its compact SOT-23 package makes it ideal for use in space-constrained applications, such as portable devices and PCB assemblies. Its fast switching capabilities are beneficial in RF and high-frequency applications.
Package
The MMBTA06-7-F is a surface-mount transistor package, specifically in the SOT-23 configuration.
