仕様
| 属性 | 値 |
| Supplier | Central Semiconductor Corp |
| Package / Case | Tube |
| Part Status | Obsolete |
| Transistor Type | 4 PNP (Quad) |
| Current - Collector(Ic)(Max) | 600mA |
| Voltage - Collector Emitter Breakdown(Max) | 60V |
| Vce Saturation(Max) @ Ib Ic | 1.6V @ 30mA, 300mA |
| Current - Collector Cutoff(Max) | 50nA (ICBO) |
| DC Current Gain(h FE)(Min) @ Ic Vce | 50 @ 300mA, 10V |
| Power - Max | 650mW |
| Frequency - Transition | 200MHz |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
