仕様
| 属性 | 値 |
| Supplier | onsemi |
| Package | Tape & Box (TB) |
| ProductStatus | Obsolete |
| TransistorType | NPN |
| Voltage-CollectorEmitterBreakdown(Max) | 25V |
| Frequency-Transition | 650MHz |
| Power-Max | 350mW |
| DCCurrentGain(hFE)(Min)@IcVce | 60 @ 4mA, 10V |
| Current-Collector(Ic)(Max) | 50mA |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| Package/Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
