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MRF166C
+BOMRF MOSFET 28V 319-07
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メーカーMACOMテクノロジー・ソリューションズ
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メーカー品番 #MRF166C
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データシート MRF166C DataSheet
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在庫状況3381
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Part Status | Active |
| Base Product Number | MRF166 |
| Technology | MOSFET (Metal Oxide) |
| Configuration | N-Channel |
| Frequency | 30MHz ~ 500MHz |
| Gain | 16dB |
| Voltage - Test | 28 V |
| Current Rating (Amps) | 4A |
| Current - Test | 25 mA |
| Power - Output | 20W |
| Voltage - Rated | 65 V |
| Package / Case | 319-07 |
| Supplier Device Package | 319-07, Style 3 |
| Packaging | Tray |
概要
Description
Key specifications typically include a collector-emitter voltage that can handle significant power levels, making it suitable for applications like TV transmitters, RF amplifiers, and industrial RF heating. Its package is often designed to be easy to integrate into existing systems, ensuring compatibility with various RF circuit designs.
The MRF166C is valued for its performance stability across temperature variations, contributing to its popularity in both commercial and industrial sectors. Its ability to deliver consistent performance makes it a critical component in ensuring reliable signal transmission and amplification in RF systems.
Equivalent
1. BLF278 - by Ampleon
2. SD2931 - by STMicroelectronics
3. SRFJ7043 - by Sirenza Microdevices
4. ARF446 - by Microsemi
These equivalents may vary in specifications like power output and frequency range, so it’s important to verify compatibility with your specific application.
Features
1. Frequency Range: Suitable for operations up to 175 MHz, making it ideal for VHF applications.
2. Power Output: Can deliver up to 150 watts of output power, ensuring strong signal transmission.
3. Efficiency: High efficiency, typically around 60% or more, which helps in reducing power loss and heat generation.
4. Gain: Provides a power gain of around 10 dB, contributing to effective amplification.
5. Package Type: Comes in a hermetically sealed package for enhanced reliability and protection against environmental factors.
6. Impedance Matching: Designed with internal matching components to ease circuit design and ensure optimal performance.
7. Thermal Management: Features an all-gold metallization system for improved thermal stability and durability.
8. Application: Commonly used in industrial, scientific, and medical applications as well as broadcasting and communication systems.
These characteristics make the MRF166C a robust choice for high-frequency power amplification needs.
Pinout
1. Collector (Drain): This is the terminal through which the main current flows into the transistor, often connected to the power supply in amplifier configurations.
2. Emitter (Source): This terminal provides the path through which the current leaves the transistor, usually connected to the ground or the output in amplifier configurations.
3. Base (Gate): The base terminal is used for controlling the operation of the transistor. A small current or voltage applied here modulates the larger current flowing from the collector to the emitter.
4. Case (Flange): Often used as a heat sink connection, this pin may also be connected to the emitter, depending on the specific design and application.
These transistors are vital components in RF amplification, providing the necessary gain and power handling capabilities for communication devices.
Manufacturer
Application
1. Broadcast Transmitters: Enhancing signal transmission in TV and FM radio broadcasting.
2. RF Amplifiers: Serving as a crucial component in amplifying RF signals for various communication devices.
3. Military and Aerospace: Used in secure and reliable communication systems.
4. Industrial RF Heating: Employed in applications like drying and sealing.
5. Telecommunications: Supporting cellular base stations and repeaters.
Its high power and efficiency make it suitable for demanding RF performance environments.