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MRF581
+BOMRF TRANS NPN 18V 5GHZ MICRO X
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メーカーマイクロセミコーポレーション
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メーカー品番 #MRF581
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パッケージ Micro-X ceramic (84C)
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在庫状況8892
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Supplier | Microchip Technology |
| Package / Case | Bulk |
| Part Status | Obsolete |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown(Max) | 18V |
| Frequency - Transition | 5GHz |
| Noise Figure(d B Typ @ f) | 3dB ~ 3.5dB @ 500MHz |
| Gain | 13dB ~ 15.5dB |
| Power - Max | 1.25W |
| DC Current Gain(h FE)(Min) @ Ic Vce | 50 @ 50mA, 5V |
| Current - Collector(Ic)(Max) | 200mA |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
概要
Description
The MRF581 operates effectively in the frequency range from VHF to UHF, typically up to 400 MHz. It is designed to deliver high gain and output power, often found in applications requiring up to several watts of output power. Its design allows for straightforward integration into various circuitry designs, thanks to its stable performance and reliability under different operating conditions.
The transistor is housed in a TO-39 package, which provides good thermal characteristics, ensuring reliability and longevity in circuit designs. This package facilitates heat dissipation, which is crucial for maintaining the operational stability of RF transistors. Overall, the MRF581 is an essential component for RF engineers looking to design efficient and reliable RF amplification circuits.
Equivalent
1. 2N5109 - A popular RF transistor similar in performance.
2. 2N3866 - Another RF transistor with comparable specifications.
3. BFR96 - Suitable for RF amplifier applications.
4. NTE108 - A direct replacement from NTE Electronics.
When considering equivalents, always verify the specific application requirements, such as frequency range, power output, and package type.
Features
1. Frequency Range: Optimized for RF applications, it operates efficiently in the VHF and UHF frequency bands.
2. Power Output: The MRF581 is known for its capability to deliver moderate power output, making it suitable for RF amplification tasks in communication devices.
3. Gain: Offers a significant power gain, which is crucial for amplifying weak signals in RF circuits.
4. Package Type: Often comes in a hermetically sealed package, enhancing its reliability and stability in various operating environments.
5. Thermal Management: Designed to handle moderate levels of heat dissipation, often incorporating features that enhance thermal conductivity.
6. Application: Commonly used in RF amplifiers, transmitters, and other communication equipment due to its robust performance at high frequencies.
Overall, the MRF581 is valued for its high frequency, reliable performance, and suitability for various RF applications.
Pinout
1. Emitter: This is usually the ground reference point for the transistor.
2. Base: This pin is used to control the transistor's operation, receiving the input signal.
3. Collector: This is the main output of the transistor where the amplified signal is collected.
The MRF581 is suitable for use in applications requiring high-frequency amplification, such as RF amplifiers and transmitters. It offers good power gain and efficiency, making it a popular choice for RF design engineers. Always refer to the specific datasheet for detailed electrical characteristics and ratings.
Manufacturer
Application
1. RF Amplifiers: Often employed in RF amplification circuits for radio frequency applications, including VHF and UHF bands.
2. Broadcast Transmitters: Utilized in the amplification stages of broadcast transmitters due to its high frequency response.
3. Communication Equipment: Used in various communication devices for signal boosting and transmission.
4. Industrial RF Applications: Suitable for industrial RF applications that require reliable amplification.
Its high gain and frequency capabilities make it ideal for these applications, providing efficient performance in RF signal processing.