MRF581

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MRF581

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RF TRANS NPN 18V 5GHZ MICRO X

  • メーカーマイクロセミコーポレーション

  • メーカー品番 #MRF581

  • パッケージ Micro-X ceramic (84C)

  • 在庫状況8892

365 日間品質保証

7*24 日間の品質保証

90-時間単位のサービス保証

1日間のアフターサービス保証

仕様

属性 値
Supplier Microchip Technology
Package / Case Bulk
Part Status Obsolete
Transistor Type NPN
Voltage - Collector Emitter Breakdown(Max) 18V
Frequency - Transition 5GHz
Noise Figure(d B Typ @ f) 3dB ~ 3.5dB @ 500MHz
Gain 13dB ~ 15.5dB
Power - Max 1.25W
DC Current Gain(h FE)(Min) @ Ic Vce 50 @ 50mA, 5V
Current - Collector(Ic)(Max) 200mA
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount

概要

Description

The MRF581 is a type of RF transistor commonly used in high-frequency applications, specifically designed for amplifying RF signals. It is a silicon NPN transistor known for its durability and efficiency in RF amplification tasks, making it suitable for use in FM transmitters, RF amplifiers, and other RF signal-processing applications.
The MRF581 operates effectively in the frequency range from VHF to UHF, typically up to 400 MHz. It is designed to deliver high gain and output power, often found in applications requiring up to several watts of output power. Its design allows for straightforward integration into various circuitry designs, thanks to its stable performance and reliability under different operating conditions.
The transistor is housed in a TO-39 package, which provides good thermal characteristics, ensuring reliability and longevity in circuit designs. This package facilitates heat dissipation, which is crucial for maintaining the operational stability of RF transistors. Overall, the MRF581 is an essential component for RF engineers looking to design efficient and reliable RF amplification circuits.

Equivalent

The MRF581 is a VHF/UHF transistor often used in RF applications. Equivalent products include:
1. 2N5109 - A popular RF transistor similar in performance.
2. 2N3866 - Another RF transistor with comparable specifications.
3. BFR96 - Suitable for RF amplifier applications.
4. NTE108 - A direct replacement from NTE Electronics.
When considering equivalents, always verify the specific application requirements, such as frequency range, power output, and package type.

Features

The MRF581 is a bipolar junction transistor (BJT) designed for high-frequency applications. Here are its key features:
1. Frequency Range: Optimized for RF applications, it operates efficiently in the VHF and UHF frequency bands.
2. Power Output: The MRF581 is known for its capability to deliver moderate power output, making it suitable for RF amplification tasks in communication devices.
3. Gain: Offers a significant power gain, which is crucial for amplifying weak signals in RF circuits.
4. Package Type: Often comes in a hermetically sealed package, enhancing its reliability and stability in various operating environments.
5. Thermal Management: Designed to handle moderate levels of heat dissipation, often incorporating features that enhance thermal conductivity.
6. Application: Commonly used in RF amplifiers, transmitters, and other communication equipment due to its robust performance at high frequencies.
Overall, the MRF581 is valued for its high frequency, reliable performance, and suitability for various RF applications.

Pinout

The MRF581 is a NPN silicon RF power transistor designed primarily for wideband communications and high-frequency applications. It typically comes in a TO-39 metal can package, which has three pins. The pin configuration is as follows:
1. Emitter: This is usually the ground reference point for the transistor.
2. Base: This pin is used to control the transistor's operation, receiving the input signal.
3. Collector: This is the main output of the transistor where the amplified signal is collected.
The MRF581 is suitable for use in applications requiring high-frequency amplification, such as RF amplifiers and transmitters. It offers good power gain and efficiency, making it a popular choice for RF design engineers. Always refer to the specific datasheet for detailed electrical characteristics and ratings.

Manufacturer

The MRF581 is a transistor manufactured by Motorola. Motorola is an American multinational company known for its role in the development and manufacturing of telecommunications equipment, semiconductors, and electronics. Founded in 1928, it has a long history in the electronics industry, initially gaining fame for its early radios and later for its innovations in mobile communications. Motorola was a major player in the semiconductor industry before it spun off its semiconductor division into a separate company, Freescale Semiconductor, in 2004. Motorola continues to operate in the telecommunications sector, with a focus on mobile and communication technologies.

Application

The MRF581 is a bipolar junction transistor primarily used in RF amplification applications. Its main application areas include:
1. RF Amplifiers: Often employed in RF amplification circuits for radio frequency applications, including VHF and UHF bands.

2. Broadcast Transmitters: Utilized in the amplification stages of broadcast transmitters due to its high frequency response.

3. Communication Equipment: Used in various communication devices for signal boosting and transmission.

4. Industrial RF Applications: Suitable for industrial RF applications that require reliable amplification.
Its high gain and frequency capabilities make it ideal for these applications, providing efficient performance in RF signal processing.

Package

The MRF581 is a transistor that comes in a TO-39 package type. The TO-39 is a metal can package commonly used for transistors and other semiconductor devices, offering good thermal performance for higher power applications.