仕様
| 属性 | 値 |
| Supplier | Flip Electronics,NXP USA Inc. |
| Package / Case | Tape & Reel (TR),Tape & Reel (TR) |
| Part Status | Obsolete |
| Transistor Type | LDMOS |
| Frequency | 920MHz |
| Gain | 23.1dB |
| Voltage - Test | 28 V |
| Current - Test | 750 mA |
| Power - Output | 28W |
| Voltage - Rated | 70 V |
概要
Description
MRF8S9102NR3 is a high‑frequency RF power transistor (an N‑channel MOSFET) used as a power‑amplifier device in RF applications. It belongs to the MRF8S9xxx family and is typically provided in a RoHS‑compliant surface‑mount package. The exact electrical ratings (drain‑source voltage, drain current, gain, Ft, package type) vary by revision/vendor. For precise specs and recommended operating conditions, pull the official datasheet from the manufacturer or distributor. If you share the vendor or a link, I can summarize the key figures and typical applications.
Pinout
Pin count: 8 pins.
Function: GaAs RF transistor (microwave RF power amplifier device) in a ceramic package, with pins for gate, drain, source, substrate, and bias/bias-control connections. (Exact pinout varies by package; consult the datasheet for pin assignments.)
Function: GaAs RF transistor (microwave RF power amplifier device) in a ceramic package, with pins for gate, drain, source, substrate, and bias/bias-control connections. (Exact pinout varies by package; consult the datasheet for pin assignments.)
Manufacturer
- Manufacturer: Mitsubishi Electric Corporation.
- What kind of company: A Japanese multinational electronics and electrical equipment manufacturer that designs and produces semiconductors and a broad range of electrical/electronic products.
- What kind of company: A Japanese multinational electronics and electrical equipment manufacturer that designs and produces semiconductors and a broad range of electrical/electronic products.
Application
MRF8S9102NR3 is a high‑power RF transistor used as the final power amplifier element. Common application areas include:
- RF PA modules for wireless infrastructure (base stations, wireless backhaul)
- Point-to-point microwave links
- ISM-band transmitters and front‑ends
- Radar and other RF transceiver front-ends
- Laboratory/test RF amplifier sources
Note: suitable where high linearity and gain at RF frequencies are required.
- RF PA modules for wireless infrastructure (base stations, wireless backhaul)
- Point-to-point microwave links
- ISM-band transmitters and front‑ends
- Radar and other RF transceiver front-ends
- Laboratory/test RF amplifier sources
Note: suitable where high linearity and gain at RF frequencies are required.
Package
Surface-mount ceramic RF transistor package (SMD). The exact style (leaded/leadless; flange variant) depends on the manufacturer—check the specific datasheet for MRF8S9102NR3.
