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MT28EW256ABA1HJS-0SIT

Name: MT28EW256ABA1HJS-0SIT
Rating: 4.8 (15 reviews)

+BOM

IC FLASH 256MBIT PARALLEL 56TSOP

メーカーマイクロンテクノロジー株式会社
メーカー品番 #MT28EW256ABA1HJS-0SIT
在庫状況5899

365 日間品質保証

7*24 日間の品質保証

90-時間単位のサービス保証

1日間のアフターサービス保証

仕様

属性	値
Part Status	Active
Base Product Number	MT28EW256
DigiKey Programmable	Not Verified
Memory Type	Non-Volatile
Memory Format	FLASH
Technology	FLASH - NOR
Memory Size	256Mbit
Memory Organization	32M x 8, 16M x 16
Memory Interface	Parallel
Write Cycle Time - Word, Page	60ns
Voltage - Supply	2.7V ~ 3.6V
Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount
Package	56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package	56-TSOP
Packaging	Tray
Access Time	75 ns

概要

Description

The MT28EW256ABA1HJS-0SIT is a NAND Flash memory device produced by Micron Technology. It is designed for applications that require high-density and non-volatile storage solutions, such as embedded systems, industrial applications, and consumer electronics. This particular model offers a storage capacity of 256 megabits.
The device operates with a standard voltage supply, typically around 3.3 volts, and supports asynchronous read and write operations. It features fast data access times and low power consumption, making it suitable for battery-powered devices. The MT28EW256ABA1HJS-0SIT is known for its reliability and endurance, providing a high number of program/erase cycles.
Additionally, the device is equipped with advanced error correction mechanisms to ensure data integrity. It comes in a compact 48-pin TSOP package, facilitating easy integration into various electronic designs. Overall, the MT28EW256ABA1HJS-0SIT is an efficient and robust solution for applications requiring reliable and large-scale data storage.

Equivalent

The MT28EW256ABA1HJS-0SIT is a 256Mb NOR Flash memory chip. Equivalent products include:
1. W25Q256JV from Winbond
2. MX25L25645G from Macronix
3. S25FL256S from Cypress Semiconductor (now Infineon Technologies)
4. AT25DF256 from Adesto Technologies (now Dialog Semiconductor)
These equivalents share similar features like storage capacity, interface type, and performance characteristics. Always verify specifications with the manufacturer to ensure compatibility with your application.

Features

The MT28EW256ABA1HJS-0SIT is a Micron NOR Flash memory chip with a storage capacity of 256 Mb. It features a single-supply voltage operation, operating at 3.0V to 3.6V, which simplifies power supply design. The chip is organized as 16 Mb x 16 bits and supports fast read access times, improving system performance. It includes a multi-sector erase capability with granularity as small as 4 KB sectors, allowing for flexible memory management.
The device offers advanced security features such as password protection and a hardware-based data protection mechanism. It also supports deep power-down modes to reduce power consumption when the device is not in active use.
This NOR Flash is designed for high reliability, featuring 100,000 program/erase cycles per sector and data retention of 20 years. It is suitable for a range of applications, including automotive, industrial, and consumer electronics, due to its robust performance in harsh environments. The chip is packaged in a compact form factor, making it suitable for space-constrained applications.

Manufacturer

The MT28EW256ABA1HJS-0SIT is manufactured by Micron Technology, Inc. Micron is a major American company that specializes in the production of semiconductor devices, primarily focusing on memory and storage solutions. This includes dynamic random-access memory (DRAM), NAND flash memory, and NOR flash memory, among others. The company supplies these components to a broad range of applications and industries, including computing, consumer electronics, networking, and mobile devices. Micron is known for its innovation in memory technologies and has a significant presence in the global semiconductor market.

Application

The MT28EW256ABA1HJS-0SIT is a NOR flash memory component commonly used in various applications requiring reliable and fast memory performance. Key application areas include automotive systems for firmware storage, industrial machinery for control systems, embedded systems for boot code storage, and consumer electronics for program and data storage. Its high endurance and wide temperature range make it suitable for devices that operate under demanding conditions. Additionally, it's useful in telecommunications for storing configuration data and code, as well as in medical devices where reliability and stability are crucial.

Package

The MT28EW256ABA1HJS-0SIT is a NOR Flash memory device from Micron Technology, housed in a Ball Grid Array (BGA) package. This type of package is compact and well-suited for high-density applications, providing a reliable connection between the chip and the PCB.

Frequently Asked Questions

Q: What is the memory size and organization of the MT28EW256ABA1HJS-0SIT?
A: It has 256Mbit capacity, organized as 32M x 8 or 16M x 16, configurable via byte/word mode on the parallel interface.

Q: What is the supply voltage range for this NOR Flash device?
A: The operating voltage supply range is 2.7V to 3.6V, suitable for standard 3V system designs.

Q: What is the typical access time for read operations?
A: The random access time is 75 ns, ensuring fast read performance for code shadowing or execute-in-place (XIP) applications.

Q: What is the operating temperature range of this component?
A: It supports an industrial temperature range from -40°C to +85°C (TA), suitable for harsh environment deployments.

Q: Is this memory device surface mount and what package does it use?
A: Yes, it is surface mount in a 56-TFSOP (18.40mm width) package, with the supplier device package designated as 56-TSOP.

Q: Does this part support page or word write operations?
A: Yes, it features a write cycle time of 60ns for both word and page programming, enabling efficient firmware updates.