MT29F2G08ABAEAWP-IT:E

画像は参考用です

MT29F2G08ABAEAWP-IT:E

+BOM

IC FLASH 2GBIT PARALLEL 48TSOP I

  • メーカーマイクロンテクノロジー株式会社

  • メーカー品番 #MT29F2G08ABAEAWP-IT:E

  • 在庫状況5067

365 日間品質保証

7*24 日間の品質保証

90-時間単位のサービス保証

1日間のアフターサービス保証

仕様

属性
Part Status Last Time Buy
Base Product Number MT29F2G08
DigiKey Programmable Verified
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND
Memory Size 2Gbit
Memory Organization 256M x 8
Memory Interface Parallel
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package 48-TSOP I
Packaging Tray

概要

Description

The MT29F2G08ABAEAWP-IT:E is a NAND Flash memory chip produced by Micron Technology. It is part of the company's extensive line of storage products and is designed for use in a variety of electronic devices, including consumer electronics, industrial applications, and computing systems. This specific model features a 2Gb (gigabit) capacity, utilizing a 3.3V power supply. The NAND architecture allows for efficient storage and retrieval of large data sets, making it suitable for applications requiring high storage density and reliability.
The chip supports a standard NAND interface, making it compatible with a wide range of processors and microcontrollers. It operates effectively over an industrial temperature range, ensuring reliability in harsh environmental conditions. Additionally, it includes features like error-correcting code (ECC) to enhance data integrity and protect against data corruption. The MT29F2G08ABAEAWP-IT:E is typically used in applications that demand robust performance and endurance, such as automotive systems, telecommunications equipment, and various embedded systems.

Equivalent

The MT29F2G08ABAEAWP-IT:E is a 2Gb NAND flash memory chip by Micron. Equivalent products include the Samsung K9F2G08U0F, Toshiba TC58NVG2S0H, and Hynix HY27UF082G2B. These chips share similar specifications such as capacity, interface, and package type, making them suitable alternatives for applications requiring NAND flash storage. Always verify compatibility with system requirements before substituting components.

Features

The MT29F2G08ABAEAWP-IT:E is a 2Gb NAND Flash memory chip from Micron Technology, designed for use in a wide range of electronic applications. Key features include:
1. Capacity: 2 Gigabits (256 Megabytes).
2. Architecture: Single-level cell (SLC) NAND, which offers better endurance and reliability compared to multi-level cell (MLC) NAND.
3. Interface: Supports asynchronous interface with standard NAND command set.
4. Performance: Fast read and write capabilities, suitable for applications requiring quick data access.
5. Voltage: Operates on a supply voltage of 3.3V, making it suitable for low-power applications.
6. Endurance: High endurance with a typical program/erase cycle count, providing long-term reliability.
7. Temperature Range: Industrial temperature range, ensuring functionality in a variety of environmental conditions.
8. Package: Available in a variety of packaging options to accommodate different physical space requirements.
These features make the MT29F2G08ABAEAWP-IT:E a versatile choice for embedded systems, consumer electronics, and industrial applications.

Pinout

The MT29F2G08ABAEAWP-IT:E is a NAND Flash memory chip manufactured by Micron Technology. It typically comes in a TSOP (Thin Small Outline Package) form factor with 48 pins.
The primary function of this NAND Flash chip is to provide non-volatile storage, meaning it retains data even when the power is turned off. It is commonly used in applications such as solid-state drives (SSDs), mobile devices, and embedded systems.
Here’s a brief overview of some key pins and their functions:
- I/O pins (I/O0 - I/O7): Used for data input and output.
- CLE (Command Latch Enable): Used to latch command inputs.
- ALE (Address Latch Enable): Used to latch address inputs.
- CE# (Chip Enable): Enables the chip for operation.
- RE# (Read Enable): Controls the data output during a read operation.
- WE# (Write Enable): Controls the data input during a write operation.
- WP# (Write Protect): Protects the NAND Flash from being written to or erased.
- R/B# (Ready/Busy): Indicates the status of the device (busy or ready for the next operation).
- Vcc: Power supply.
- GND: Ground.
This concise overview covers the essential aspects of the MT29F2G08ABAEAWP-IT:E NAND Flash chip.

Manufacturer

The MT29F2G08ABAEAWP-IT:E is manufactured by Micron Technology, Inc. Micron is an American company that specializes in the production of memory and storage solutions. It is one of the leading companies in the semiconductor industry, known for manufacturing a wide range of products, including DRAM, NAND flash memory, and solid-state drives (SSDs). Micron's products are used in various applications, from personal computing and mobile devices to data centers and automotive systems. The company emphasizes innovation and technology development to enhance data storage and processing capabilities.

Application

The MT29F2G08ABAEAWP-IT:E is a NAND Flash memory chip commonly used in embedded systems and electronics. Its application areas include:
1. Consumer Electronics: Used in smartphones, tablets, and digital cameras for data storage.
2. Industrial Applications: Integrated into automation systems and industrial controllers for reliable data retention.
3. Automotive Systems: Utilized in infotainment systems, navigation, and advanced driving assistance systems (ADAS).
4. Networking Equipment: Employed in routers and switches for firmware and configuration storage.
5. Computing Devices: Incorporated in laptops and desktops for enhanced storage solutions.
6. IoT Devices: Facilitates data storage in smart home devices and sensors.
These applications benefit from the chip's durability, performance, and storage capacity.

Package

The MT29F2G08ABAEAWP-IT:E is a NAND flash memory chip with a package type known as TSOP (Thin Small Outline Package). Specifically, it features a 48-pin TSOP I package, which is commonly used for semiconductor devices requiring a small and compact form factor.

Frequently Asked Questions


Q: Is this NAND Flash memory suitable for industrial temperature ranges?
A: Yes, the MT29F2G08ABAEAWP-IT:E operates from -40°C to 85°C, making it ideal for industrial applications.


Q: What is the memory interface type for this component?
A: It uses a parallel memory interface, which is standard for traditional NAND Flash access.


Q: Can I use this part in a 3.3V system directly?
A: Yes, it supports a supply voltage range of 2.7V to 3.6V, compatible with standard 3.3V logic.


Q: What is the memory organization of the MT29F2G08ABAEAWP-IT:E?
A: It is organized as 256M x 8 bits, offering a total density of 2Gbit.


Q: Is this component in a TSOP I package for surface mount?
A: Yes, it comes in a 48-TSOP I surface mount package with a 48-TFSOP footprint width of 18.40mm.


Q: What is the Part Status, and is it currently recommended for new designs?
A: Its status is "Last Time Buy", so it is not recommended for new designs; consider alternative base part numbers.


MT29F2G08ABAEAWP-IT:Eに関連する製品