MT29F2T08EMLEEJ4-R:E

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MT29F2T08EMLEEJ4-R:E

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IC FLASH 2TBIT VBGA

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  • メーカー品番 #MT29F2T08EMLEEJ4-R:E

  • 在庫状況20889

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仕様

属性
Part Status Active
Base Product Number MT29F2T08
Digi Key Programmable Not Verified
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND (TLC)
Memory Size 2Tbit
Memory Organization 256G x 8
Memory Interface Parallel
Voltage - Supply 2.6V ~ 3.6V
Operating Temperature 0°C ~ 70°C
Mounting Type Surface Mount
Package / Case 132-VBGA
Supplier Device Package 132-VBGA (12x18)
Packaging Box

概要

Description

MT29F2T08EMLEEJ4-R:E is Micron’s NAND flash memory device (2 Gbit, ~256 MB) with an x8 data bus and ONFI-compatible interface. It is a raw NAND die intended to be used with a host controller that provides ECC, wear leveling, and bad-block management. Typical organization consists of pages (around a couple kilobytes of user data) grouped into blocks, with a small spare (OOB) area for ECC. It supports standard NAND operations via the ONFI command set (read, program load, program confirm, erase, etc.), with performance and timing varying by grade. The “R:E” suffix denotes temperature/grade and packaging variants, and the device generally operates from a voltage range around 1.8–3.6 V. Features often include multi-plane operation to improve throughput. For exact electrical characteristics, timing, page/block sizes, endurance, retention, and pinout, consult the MT29F2T08EMLEEJ4-R:E datasheet and the ONFI specifications.

Equivalent

To give precise cross-references I need the exact specs (density/width/package). MT29F2T08EMLEEJ4-R:E is typically 2 Gbit, x8 NAND flash (likely ONFi 2.1). If that’s correct, common equivalents include:
- Samsung K9F2G08U0M (2 Gbit, x8)
- SK hynix H27UCG8M (2 Gbit, x8)
Please confirm the datasheet details (or share them) and I’ll provide exact cross-reference part numbers.

Pinout

- Pin count: 48-pin package (TSOP).
- Function: NAND flash memory device (2 Gbit) with an 8‑bit data I/O bus. It uses the standard NAND parallel interface: DQ0–DQ7 data pins; control/address pins CLE, ALE, WE#, RE#, CE#, WP#, R/B#; power pins VCC and VCCQ and GND. Suitable for non-volatile storage in embedded systems.

Manufacturer

- Manufacturer: Micron Technology, Inc.
- Company type: American multinational semiconductor company that designs, manufactures, and markets memory and storage technologies (DRAM, NAND/NOR flash) and related solutions; headquartered in Boise, Idaho, and one of the world’s largest memory makers.

Application

MT29F2T08EMLEEJ4-R:E is a NAND flash device. Common application areas include:
- Embedded systems for firmware/code and data storage
- Consumer electronics (set-top boxes, TVs, Blu-ray players, audio devices)
- Mobile/portable devices requiring non-volatile storage
- Automotive/industrial equipment (infotainment, ECUs, data logging, diagnostics)
- Networking gear (firmware storage, logs)
- Digital cameras/camcorders for image/video storage
- IoT/edge devices needing compact, low-power non-volatile storage
These use cases rely on NAND flash’s non-volatile storage, durability, and compact footprint.

Package

8-pin TSOP (SOP) package.

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