画像は参考用です

MT29F4G08ABAEAWP-IT:E

Name: MT29F4G08ABAEAWP-IT:E
Rating: 4.8 (15 reviews)

+BOM

IC FLASH 4GBIT PARALLEL 48TSOP I

メーカーマイクロンテクノロジー株式会社
メーカー品番 #MT29F4G08ABAEAWP-IT:E
在庫状況5359

365 日間品質保証

7*24 日間の品質保証

90-時間単位のサービス保証

1日間のアフターサービス保証

仕様

属性	値
Part Status	Obsolete
Base Product Number	MT29F4G08
DigiKey Programmable	Not Verified
Memory Type	Non-Volatile
Memory Format	FLASH
Technology	FLASH - NAND
Memory Size	4Gbit
Memory Organization	512M x 8
Memory Interface	Parallel
Voltage - Supply	2.7V ~ 3.6V
Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount
Package	48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package	48-TSOP I
Packaging	Tray

概要

Description

The MT29F4G08ABAEAWP-IT:E is a NAND flash memory chip produced by Micron Technology. Designed for non-volatile storage, it is part of the MT29F series, which is known for its reliable performance and efficient data storage capabilities. This specific model features a 4Gb (gigabit) capacity, organized in an 8-bit configuration, and utilizes a single-level cell (SLC) architecture for higher endurance and faster read/write speeds compared to multi-level cell (MLC) and triple-level cell (TLC) variants. It is built using advanced semiconductor technology to enhance durability and optimize power consumption.
The chip is suited for industrial applications, evident from its extended temperature range of -40°C to +85°C, ensuring reliable performance in harsh environments. It is typically used in applications requiring high-speed data access and storage, such as embedded systems, automotive electronics, and industrial equipment. The MT29F4G08ABAEAWP-IT:E offers a balance of performance, endurance, and cost-effectiveness, making it a popular choice for various industrial and commercial applications needing robust flash storage solutions.

Equivalent

The MT29F4G08ABAEAWP-IT:E is a 4Gb NAND Flash memory chip made by Micron. Equivalent products from other manufacturers could include:
- Samsung K9F4G08U0D
- Toshiba TH58NVG4D4CTG20
- Hynix HY27UH08AG5M
- Intel JS29F64G08AAMDB
These equivalents offer similar storage capacities, interfaces, and performance specifications, making them suitable replacements for similar applications. Always ensure compatibility by checking detailed specifications and application requirements.

Features

The MT29F4G08ABAEAWP-IT:E is a NAND Flash memory device designed by Micron Technology. It features a 4Gb (gigabit) capacity organized in a 4096-byte page size with an additional 224 bytes for spare area. This device operates on a 3.3V power supply and supports high-speed asynchronous and synchronous interfaces, making it suitable for various applications requiring reliable data storage.
Key features include:
- Capacity: 4Gb
- Page Size: 4096 bytes + 224 bytes spare
- Voltage: 3.3V
- Temperature Range: Industrial temperature range (-40°C to +85°C)
- Interface: Asynchronous and synchronous
- Endurance: Typically supports 10,000 program/erase cycles
- Error Correction: Supports error-correcting code (ECC) to ensure data integrity
- Package: Available in a 48-pin TSOP type 1 or a 63-ball BGA package
This NAND Flash device is commonly used in applications such as solid-state drives (SSDs), digital cameras, and other embedded systems that require reliable, non-volatile memory storage solutions.

Pinout

The MT29F4G08ABAEAWP-IT:E is a NAND Flash memory device manufactured by Micron Technology. It is a 4Gb NAND Flash that typically comes in a standard TSOP (Thin Small-Outline Package) form factor.
Here are the key details:
- Pin Count: The device generally features 48 pins.
- Function: The MT29F4G08ABAEAWP-IT:E is used for high-density data storage applications, offering a non-volatile memory solution ideal for a wide range of electronic devices. It supports advanced features like wear leveling, bad block management, and error correction. This NAND Flash device is used in applications such as solid-state drives, USB flash drives, and memory cards.
Always refer to the official datasheet from Micron Technology for the most accurate and detailed information about the device's specifications and pin configuration.

Manufacturer

The MT29F4G08ABAEAWP-IT:E is a NAND flash memory chip manufactured by Micron Technology, Inc. Micron is a leading global company known for producing semiconductor devices, primarily focusing on memory and storage solutions. Their product lineup includes DRAM, NAND flash memory, and other solid-state drives (SSDs), which are essential components in various electronic devices such as computers, smartphones, and data centers.
Micron Technology is recognized for its innovation and development in the field of memory technology, contributing significantly to advancements in data storage and processing. The company serves a broad range of markets, including consumer electronics, mobile communications, automotive, industrial, and enterprise sectors. Micron has a strong presence worldwide, with manufacturing facilities, research and development centers, and sales offices distributed across multiple countries. As a key player in the semiconductor industry, Micron continues to invest in cutting-edge technologies and solutions to meet the growing demands for high-performance and reliable memory and storage products.

Application

The MT29F4G08ABAEAWP-IT:E is a NAND Flash memory chip, widely used in various applications that require non-volatile memory storage. Key application areas include:
1. Consumer Electronics: Utilized in smartphones, tablets, and multimedia devices for data storage.
2. Industrial Systems: Employed in embedded systems and industrial automation for reliable data retention in harsh environments.
3. Automotive: Used in infotainment systems, navigation, and other onboard electronics needing durable storage.
4. Networking Equipment: Supports routers and switches with essential firmware storage.
5. Data Storage Devices: Integral part of SSDs and memory cards, providing expandable storage solutions.
6. IoT Devices: Facilitates data storage in connected devices requiring lightweight and compact memory components.

Package

The MT29F4G08ABAEAWP-IT:E is a NAND Flash memory chip from Micron Technology. It comes in a TSOP (Thin Small Outline Package) type, which is a rectangular, thin, and flat package commonly used for memory ICs. The specific configuration for this model is a 48-pin TSOP Type I package.

Frequently Asked Questions

Q: What is the memory capacity and organization of the MT29F4G08ABAEAWP-IT:E?
A: This device has a 4Gbit density organized as 512M x 8 bits, suitable for high-density data storage in embedded systems.

Q: Is this NAND Flash component suitable for industrial temperature ranges?
A: Yes, it operates from -40°C to 85°C (TA), making it ideal for industrial and automotive applications requiring wide temperature tolerance.

Q: What voltage supply does this memory IC require?
A: It requires a single supply voltage ranging from 2.7V to 3.6V, ensuring compatibility with standard 3.3V logic systems.

Q: What is the memory interface type for this part?
A: It uses a parallel memory interface, enabling fast read/write operations for high-throughput NAND Flash applications.

Q: Is the MT29F4G08ABAEAWP-IT:E still in production or obsolete?
A: Its Part Status is marked as Obsolete, so it is recommended for legacy designs or last-time buy; verify availability with distributors.

Q: What package does this product come in, and is it surface mount?
A: It comes in a 48-TFSOP (18.40mm width) surface-mount package, with supplier device package 48-TSOP I, commonly used for NAND Flash modules.

Q: What type of NAND technology does this memory use?
A: It utilizes FLASH - NAND non-volatile memory technology, offering high-density storage with block-oriented access for data logging and firmware.