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MT29F4T08EULGEM4-ITF:G
+BOMIC FLASH 4TBIT LBGA
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メーカーマイクロンテクノロジー株式会社
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メーカー品番 #MT29F4T08EULGEM4-ITF:G
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在庫状況21034
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| PartStatus | Obsolete |
| BaseProductNumber | MT29F4T08 |
| DigiKeyProgrammable | Not Verified |
| MemoryFormat | FLASH |
| MemorySize | 4Tbit |
| MemoryOrganization | 512G x 8 |
| Packaging | Box |
概要
Description
Key points:
- Type: Multi-Level Cell (MLC) NAND flash memory.
- Density: 4 Gbit (raw), typically used as embedded storage with ECC.
- Interface: ONFI-compatible parallel NAND with an 8-bit data bus (x8).
- Temperature rating: Industrial-grade (IT) range, commonly -40°C to +85°C.
- Applications: Non-volatile storage for embedded systems, boot/storage memory in consumer/industrial devices.
- Packaging/grade: Fits typical Micron MT29F family offerings, RoHS-compliant.
- Usage notes: Requires host/controller support for page/block management, wear leveling, ECC, and bad-block handling.
- For exact specs (page/block size, endurance, timing, voltages), consult the official Micron MT29F4T08EULGEM4-ITF:G datasheet and product brief.
Features
- Capacity: 4 Gbit (512 MB) NAND flash
- Type: Multi-level cell (MLC) NAND
- Interface: ONFI-compliant NAND, x8 data bus
- Page/Block: 2 KB page size; 64 pages per block (typical)
- Features: multi-plane and two-plane operation for higher throughput
- Reliability: built-in bad-block management and ECC support; compatible with BCH ECC
- Endurance/Retention: P/E cycles in the low thousands; data retention ~10 years at 25°C
- Temperature: Industrial temperature range (-40°C to 85°C)
- Usage features: fast program/erase, suspend/resume, wear leveling
- Packaging: industrial-grade package variants available
Note: exact figures (page/spare sizes, block size, P/E cycles, voltages, speeds) can vary by revision; please consult the official datasheet for precise specifications.
Pinout
- Function: MT29F4T08EULGEM4-ITF:G is a 4 Gbit, parallel (x8) NAND flash memory. It provides non-volatile storage with an 8-bit data bus. Interface signals include data lines DQ0–DQ7; address inputs (A0+); command/address interface via CLE (Command Latch Enable) and ALE (Address Latch Enable); control pins CE#, WE#, RE#; status/ready via R/B#; write protection via WP#; plus power pins (Vcc, Vccq) and ground (GND).
Manufacturer
- What kind of company: A US-based multinational semiconductor company specializing in memory and storage products (DRAM, NAND/NOR flash) and related components.
Application
- Embedded storage in consumer electronics (smartphones, tablets, digital cameras, media players) for firmware and data.
- Storage subsystems in laptops/embedded systems and in NAND-based modules (eMMC/SSD, USB drives, memory cards) with controllers.
- Industrial and automotive electronics requiring rugged, wide‑temperature nonvolatile memory (infotainment, instrumentation, PLCs, gateways).
- Data logging and firmware storage for IoT devices and networking gear.
Package
Frequently Asked Questions
Q: What is the memory capacity and organization of the MT29F4T08EULGEM4-ITF:G?
A: It has a 4Tbit (Terabit) capacity, organized as 512G x 8 bits, suitable for high-density storage applications.
Q: Is this component programmable via DigiKey or other standard programmers?
A: No, it is marked as "Not Verified" for DigiKey programmability; programming likely requires dedicated NAND flash tools.
Q: What memory format does this Micron component use?
A: It uses the FLASH memory format, specifically NAND flash, designed for non-volatile data storage.
Q: Can the MT29F4T08EULGEM4-ITF:G be used in new designs?
A: No, its Part Status is "Obsolete", meaning it is not recommended for new designs and may have limited availability.
Q: What packaging is this part supplied in?
A: It is supplied in a Box packaging, which may contain multiple trays or reels based on the original manufacturer's specification.
Q: Is the memory organized as a single or multiple die configuration?
A: The 4Tbit density typically implies a multi-die package, but exact die count is not specified in the provided parameters.
