仕様
| 属性 | 値 |
| Package / Case | Tray |
| Part Status | Obsolete |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND |
| Memory Size | 64Gb (8G x 8) |
| Memory Interface | Parallel |
| Clock Frequency | 83 MHz |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
概要
Description
The MT29F64G08CBABBWP-12IT:B is a specific model of NAND Flash memory manufactured by Micron Technology. This device is part of the company's extensive lineup of non-volatile memory solutions, designed for storing data in electronic devices. The "64G" in the model number indicates a capacity of 64 gigabits, while "08" refers to the organization of the memory, often meaning it is 8 bits wide.
These NAND Flash memory chips are used in various applications, including solid-state drives (SSDs), mobile devices, embedded systems, and other electronics requiring reliable storage. The device operates at a low voltage, which helps reduce power consumption—an important factor in portable and battery-powered devices.
The "-12IT" segment suggests specifics about performance speeds and temperature ratings, possibly indicating an industrial temperature range, making it suitable for more demanding environments. These chips are favored for their durability, scalability, and cost-effectiveness compared to other storage technologies, fitting into a wide range of products needing persistent storage solutions.
These NAND Flash memory chips are used in various applications, including solid-state drives (SSDs), mobile devices, embedded systems, and other electronics requiring reliable storage. The device operates at a low voltage, which helps reduce power consumption—an important factor in portable and battery-powered devices.
The "-12IT" segment suggests specifics about performance speeds and temperature ratings, possibly indicating an industrial temperature range, making it suitable for more demanding environments. These chips are favored for their durability, scalability, and cost-effectiveness compared to other storage technologies, fitting into a wide range of products needing persistent storage solutions.
Equivalent
The MT29F64G08CBABBWP-12IT:B chip is a NAND Flash memory device from Micron. Equivalent products include:
1. Toshiba TC58TEG6DCJTA00
2. Samsung K9GAG08U0E
3. Hynix H27UBG8T2BTR
These alternatives have similar storage capacities and interface types, making them suitable substitutes in applications requiring NAND Flash memory with similar specifications. Always verify specific requirements such as package type and temperature range for compatibility.
1. Toshiba TC58TEG6DCJTA00
2. Samsung K9GAG08U0E
3. Hynix H27UBG8T2BTR
These alternatives have similar storage capacities and interface types, making them suitable substitutes in applications requiring NAND Flash memory with similar specifications. Always verify specific requirements such as package type and temperature range for compatibility.
Features
The MT29F64G08CBABBWP-12IT:B is a NAND Flash memory chip designed for data storage applications. Key features include:
1. Capacity: 64Gb (Gigabit) storage, accommodating large volumes of data.
2. Architecture: SLC (Single-Level Cell) NAND technology, offering higher endurance and reliability.
3. Interface: ONFI (Open NAND Flash Interface) 2.2 compliant, ensuring compatibility and ease of integration with various controllers.
4. Voltage: Operates at a 3.3V power supply, balancing power efficiency and performance.
5. Performance: High-speed data transfer rates with a page size of 8KB and a block size of 256 pages.
6. Temperature Range: Industrial temperature range from -40°C to +85°C, suitable for harsh environments.
7. Package: Available in a 48-pin TSOP (Thin Small Outline Package), facilitating compact designs.
These features make the MT29F64G08CBABBWP-12IT:B suitable for use in industrial and consumer electronics where reliability and performance are critical.
1. Capacity: 64Gb (Gigabit) storage, accommodating large volumes of data.
2. Architecture: SLC (Single-Level Cell) NAND technology, offering higher endurance and reliability.
3. Interface: ONFI (Open NAND Flash Interface) 2.2 compliant, ensuring compatibility and ease of integration with various controllers.
4. Voltage: Operates at a 3.3V power supply, balancing power efficiency and performance.
5. Performance: High-speed data transfer rates with a page size of 8KB and a block size of 256 pages.
6. Temperature Range: Industrial temperature range from -40°C to +85°C, suitable for harsh environments.
7. Package: Available in a 48-pin TSOP (Thin Small Outline Package), facilitating compact designs.
These features make the MT29F64G08CBABBWP-12IT:B suitable for use in industrial and consumer electronics where reliability and performance are critical.
Pinout
The MT29F64G08CBABBWP-12IT:B is a NAND Flash memory device produced by Micron Technology. It typically comes in a standard package with a ball grid array (BGA) form factor. The device has the following specifications:
- Pin Count: It generally has 63 balls in a BGA configuration.
- Key Functions:
- Data Storage: It is used for storing data with high density, specifically 64 Gigabits.
- Interface: Uses an 8-bit bus interface for data input and output.
- Control Signals: Includes signals for controlling read, write, and erase operations.
- Power Supply: Requires specific power pins for operation, which include Vcc and Vss pins.
- I/O Pins: Includes pins for input and output of data.
- Command Latch Enable (CLE), Address Latch Enable (ALE), and Chip Enable (CE#): Used for command and address signaling.
- Write Protect (WP#) and Ready/Busy (R/B#): For controlling write operations and indicating device status.
Please refer to the manufacturer's datasheet for detailed pin configuration and specific electrical characteristics.
- Pin Count: It generally has 63 balls in a BGA configuration.
- Key Functions:
- Data Storage: It is used for storing data with high density, specifically 64 Gigabits.
- Interface: Uses an 8-bit bus interface for data input and output.
- Control Signals: Includes signals for controlling read, write, and erase operations.
- Power Supply: Requires specific power pins for operation, which include Vcc and Vss pins.
- I/O Pins: Includes pins for input and output of data.
- Command Latch Enable (CLE), Address Latch Enable (ALE), and Chip Enable (CE#): Used for command and address signaling.
- Write Protect (WP#) and Ready/Busy (R/B#): For controlling write operations and indicating device status.
Please refer to the manufacturer's datasheet for detailed pin configuration and specific electrical characteristics.
Manufacturer
The MT29F64G08CBABBWP-12IT:B is manufactured by Micron Technology, Inc. Micron is an American company that specializes in the production of memory and storage solutions. It is known for its semiconductor products, including dynamic random-access memory (DRAM), NAND flash memory, and solid-state drives (SSDs). The company's products are used in a wide range of applications, including computing, networking, and mobile devices. Micron is considered one of the leading companies in the semiconductor industry, with a focus on innovation and technology advancements.
Application
The MT29F64G08CBABBWP-12IT:B is a NAND Flash memory chip, commonly used in various applications that require reliable data storage and retrieval. Key application areas include:
1. Consumer Electronics: Devices like smartphones, tablets, and digital cameras for storage of photos, videos, and applications.
2. Computing: Solid-state drives (SSDs) and laptops for enhancing data access speed and storage capacity.
3. Industrial Systems: Embedded systems and industrial computers for data logging and system control.
4. Automotive: In-vehicle infotainment systems and navigation units for reliable storage under varying conditions.
5. Networking: Routers and switches for configuration data and log storage.
The chip's high capacity and efficient data handling make it suitable for environments demanding fast and reliable memory solutions.
1. Consumer Electronics: Devices like smartphones, tablets, and digital cameras for storage of photos, videos, and applications.
2. Computing: Solid-state drives (SSDs) and laptops for enhancing data access speed and storage capacity.
3. Industrial Systems: Embedded systems and industrial computers for data logging and system control.
4. Automotive: In-vehicle infotainment systems and navigation units for reliable storage under varying conditions.
5. Networking: Routers and switches for configuration data and log storage.
The chip's high capacity and efficient data handling make it suitable for environments demanding fast and reliable memory solutions.
Package
The MT29F64G08CBABBWP-12IT:B is a NAND Flash memory component from Micron Technology, specifically packaged in a 63-Ball, 9 x 11mm, 1.0mm pitch BGA (Ball Grid Array) type.
