仕様
| 属性 | 値 |
| Package | Tray |
| ProductStatus | Active |
| MemoryType | Volatile |
| MemoryFormat | DRAM |
| Technology | SDRAM - DDR4 |
| MemorySize | 16Gb (1G x 16) |
| MemoryInterface | Parallel |
| ClockFrequency | 1.6 GHz |
| WriteCycleTime-WordPage | 15ns |
| AccessTime | 19 ns |
| Voltage-Supply | 1.14V ~ 1.26V |
| OperatingTemperature | 0°C ~ 95°C (TC) |
| MountingType | Surface Mount |
| Package/Case | 96-TFBGA |
概要
Description
The MT40A1G16KNR-062E:E is a specific model of DRAM (Dynamic Random-Access Memory) module made by Micron Technology. It is part of the DDR4 SDRAM family, which is widely used in modern computing systems for its high speed and efficiency. This module is characterized by its 1G x 16-bit architecture, providing a total capacity of 16GB. The "062E" in the model number typically refers to the speed grade, which in this case is 3200 MT/s (mega-transfers per second), a measure of the data transfer rate. The module operates at a standard voltage of 1.2V, making it energy efficient.
The MT40A1G16KNR-062E:E is designed for applications such as servers, desktops, and laptops, where high bandwidth and low latency are crucial. It supports features like on-die termination (ODT) and dual-rank configuration, enhancing signal integrity and performance. Additionally, it includes error-correcting code (ECC) capabilities for increased reliability in data processing, which is essential for enterprise and critical computing environments.
The MT40A1G16KNR-062E:E is designed for applications such as servers, desktops, and laptops, where high bandwidth and low latency are crucial. It supports features like on-die termination (ODT) and dual-rank configuration, enhancing signal integrity and performance. Additionally, it includes error-correcting code (ECC) capabilities for increased reliability in data processing, which is essential for enterprise and critical computing environments.
Equivalent
The MT40A1G16KNR-062E:E is a DDR4 SDRAM chip from Micron. Equivalent products would be other DDR4 8Gb (1G x 16) chips from major manufacturers like:
1. Samsung: K4A8G165WB-BCRC
2. Hynix (SK Hynix): H5AN8G6NCJR-UHC
3. Nanya: NT5CC512M16ER-EK
These alternatives offer similar specifications and functionality but check for specific requirements like speed, voltage, and temperature ratings to ensure compatibility.
1. Samsung: K4A8G165WB-BCRC
2. Hynix (SK Hynix): H5AN8G6NCJR-UHC
3. Nanya: NT5CC512M16ER-EK
These alternatives offer similar specifications and functionality but check for specific requirements like speed, voltage, and temperature ratings to ensure compatibility.
Features
The MT40A1G16KNR-062E:E is a DRAM module from Micron's DDR4 SDRAM lineup. It features a 16-bit data width and a 1G x 16 configuration, making it suitable for high-performance memory applications. The module operates at a speed of 3200 MT/s and uses a 1.2V power supply, which contributes to energy efficiency and reduced power consumption. It is designed with on-die termination (ODT) to improve signal integrity and supports features like bank group architecture and burst length of 8 with a burst chop option of 4. Additionally, the MT40A1G16KNR-062E:E supports programmable CAS latency and various self-refresh options to enhance flexibility in different operating environments. It is compliant with JEDEC standards, ensuring compatibility with a wide range of systems. This DRAM module is typically used in computing and networking equipment where high-speed data processing and reliability are critical.
Pinout
The MT40A1G16KNR-062E:E is a DDR4 SDRAM component from Micron Technology. It has a 96-ball FBGA (Fine-pitch Ball Grid Array) package. This specific memory component is a 16-bit wide DDR4 chip, meaning it has 16 data pins for data input/output.
The key functions of this chip include:
- High-speed data transfer: Designed for use in applications requiring fast data rates.
- Low power consumption: Enhanced power efficiency features for reduced energy usage.
- Compatibility with DDR4 standards: Ensuring it works with other components in DDR4 systems.
- Density: 1 Gigabit, providing a sizeable storage capacity per chip.
For detailed pin functions and configuration, refer to the manufacturer's datasheet, as it provides comprehensive pin assignments and descriptions.
The key functions of this chip include:
- High-speed data transfer: Designed for use in applications requiring fast data rates.
- Low power consumption: Enhanced power efficiency features for reduced energy usage.
- Compatibility with DDR4 standards: Ensuring it works with other components in DDR4 systems.
- Density: 1 Gigabit, providing a sizeable storage capacity per chip.
For detailed pin functions and configuration, refer to the manufacturer's datasheet, as it provides comprehensive pin assignments and descriptions.
Manufacturer
The MT40A1G16KNR-062E:E is a DRAM chip manufactured by Micron Technology, Inc. Micron is an American company that specializes in the production of memory and storage solutions. The company is a leading global provider of semiconductor products, including dynamic random-access memory (DRAM), NAND flash memory, and solid-state drives (SSDs). Micron's products are used in a variety of applications, including consumer electronics, mobile devices, data centers, and automotive systems. With a focus on innovation and technology, Micron continues to play a critical role in advancing the capabilities and performance of computing and digital storage solutions globally.
Application
The MT40A1G16KNR-062E:E is a DRAM module used primarily in applications requiring high-performance memory solutions. Its primary application areas include:
1. Data Centers: Enhancing server performance with efficient data processing.
2. High-Performance Computing (HPC): Supporting intensive computational tasks.
3. Networking Equipment: Improving data throughput and latency.
4. Artificial Intelligence and Machine Learning: Facilitating faster data manipulation.
5. Cloud Computing: Ensuring efficient handling of multiple virtual machines.
6. Enterprise Storage Solutions: Enhancing speed and reliability of data storage.
These applications benefit from its high bandwidth, low latency, and energy-efficient performance.
1. Data Centers: Enhancing server performance with efficient data processing.
2. High-Performance Computing (HPC): Supporting intensive computational tasks.
3. Networking Equipment: Improving data throughput and latency.
4. Artificial Intelligence and Machine Learning: Facilitating faster data manipulation.
5. Cloud Computing: Ensuring efficient handling of multiple virtual machines.
6. Enterprise Storage Solutions: Enhancing speed and reliability of data storage.
These applications benefit from its high bandwidth, low latency, and energy-efficient performance.
Package
The MT40A1G16KNR-062E:E is a DRAM chip with a plastic package type that typically follows the industry-standard FBGA (Fine-Pitch Ball Grid Array) format. This packaging is compact and suitable for high-density memory applications, allowing for efficient heat dissipation and reliable electrical performance.