仕様
| 属性 | 値 |
| Package / Case | Tray |
| Part Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR4 |
| Memory Size | 16Gb (4G x 4) |
| Memory Interface | Parallel |
| Clock Frequency | 1.6 GHz |
| Write Cycle Time - Word Page | 15ns |
| Access Time | 19 ns |
| Voltage - Supply | 1.14V ~ 1.26V |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
概要
Description
MT40A4G4VA-062E:B is a Micron DRAM device (part of the MT40A4G4VA family). It is a high‑density SDRAM die intended as a building block for memory modules (DIMMs/SODIMMs) used in desktops, laptops, and servers.
Key points:
- The “4G4” in the part name typically denotes a 4‑gigabit density per die with x4 data width.
- The -062E:B suffix encodes the speed grade/temperature and RoHS/packaging attributes; exact voltage, maximum data rate (MT/s), and timing depend on the specific lot and the datasheet revision.
- It is designed to be used alongside other similar dies on memory modules to reach higher total capacity.
For precise specifications (capacity per die, organization, voltage, supported MT/s, timings, packaging, and operating temperature), consult the MT40A4G4VA-062E:B datasheet from Micron. If you share a link or the datasheet extract, I can summarize the exact figures.
Key points:
- The “4G4” in the part name typically denotes a 4‑gigabit density per die with x4 data width.
- The -062E:B suffix encodes the speed grade/temperature and RoHS/packaging attributes; exact voltage, maximum data rate (MT/s), and timing depend on the specific lot and the datasheet revision.
- It is designed to be used alongside other similar dies on memory modules to reach higher total capacity.
For precise specifications (capacity per die, organization, voltage, supported MT/s, timings, packaging, and operating temperature), consult the MT40A4G4VA-062E:B datasheet from Micron. If you share a link or the datasheet extract, I can summarize the exact figures.
Features
MT40A4G4VA-062E:B is a Micron DDR3L SDRAM device. Key features include:
- Density/width: 4 Gb density in a x4 data-width
- Voltage: 1.35V DDR3L (1.5V tolerance typical)
- Speed: up to DDR3-1600 (1600 MT/s)
- Banks/organization: 16 banks; burst length 8
- Refresh: automatic and partial-array self-refresh
- Impedance calibration: ZQ calibration; on-die termination
- Timing features: programmable latency, write leveling
- Package: FBGA form factor
- Temperature range: -40°C to 85°C
Applications: mobile/embedded systems, laptops, and other compact memory subsystems requiring low power DDR3L DRAM. For exact timing parameters and pinout, consult the Micron datasheet.
- Density/width: 4 Gb density in a x4 data-width
- Voltage: 1.35V DDR3L (1.5V tolerance typical)
- Speed: up to DDR3-1600 (1600 MT/s)
- Banks/organization: 16 banks; burst length 8
- Refresh: automatic and partial-array self-refresh
- Impedance calibration: ZQ calibration; on-die termination
- Timing features: programmable latency, write leveling
- Package: FBGA form factor
- Temperature range: -40°C to 85°C
Applications: mobile/embedded systems, laptops, and other compact memory subsystems requiring low power DDR3L DRAM. For exact timing parameters and pinout, consult the Micron datasheet.
Pinout
- Pin count: 96 pins (FBGA-96 package).
- Function: Micron MT40A4G4VA-062E:B is a DDR4 SDRAM memory device with 4 Gbit total density in a x4 data width. It interfaces via standard DDR4 signals: address lines (A0–A14), bank address (BA0–BA2), data I/O (DQ0–DQ3) with data-strobe lines (DQS0–DQS3), data masks (DM0–DM3/DQM), command/control lines (RAS#, CAS#, WE#), chip select (CS#), clock inputs (CK, CK#), clock enable (CKE), reset (RESET#), and power/ground pins (VDD/VSS, VDDQ/VSSQ, etc.). Exact pinout is in the Micron datasheet.
- Function: Micron MT40A4G4VA-062E:B is a DDR4 SDRAM memory device with 4 Gbit total density in a x4 data width. It interfaces via standard DDR4 signals: address lines (A0–A14), bank address (BA0–BA2), data I/O (DQ0–DQ3) with data-strobe lines (DQS0–DQS3), data masks (DM0–DM3/DQM), command/control lines (RAS#, CAS#, WE#), chip select (CS#), clock inputs (CK, CK#), clock enable (CKE), reset (RESET#), and power/ground pins (VDD/VSS, VDDQ/VSSQ, etc.). Exact pinout is in the Micron datasheet.
Manufacturer
- Manufacturer: Micron Technology, Inc.
- What kind of company: An American multinational semiconductor company that designs and manufactures memory and storage technologies (DRAM, NAND, NOR flash, etc.).
- What kind of company: An American multinational semiconductor company that designs and manufactures memory and storage technologies (DRAM, NAND, NOR flash, etc.).
Application
MT40A4G4VA-062E:B is a Micron DDR4 SDRAM device. Common application areas include:
- Desktop and laptop memory subsystems (DIMMs/SODIMMs)
- Server and data-center memory modules
- Networking/telecom equipment
- Embedded, industrial automation and IoT gateways
- Consumer electronics requiring low-voltage DDR4 memory
In short: any system needing reliable, high-speed, low-voltage DDR4 memory.
- Desktop and laptop memory subsystems (DIMMs/SODIMMs)
- Server and data-center memory modules
- Networking/telecom equipment
- Embedded, industrial automation and IoT gateways
- Consumer electronics requiring low-voltage DDR4 memory
In short: any system needing reliable, high-speed, low-voltage DDR4 memory.
Package
Plastic FBGA package, 96-ball (FBGA‑96).
