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MT41J256M16HA-093:E

Name: MT41J256M16HA-093:E
Rating: 4.8 (15 reviews)

+BOM

IC DRAM 4GBIT PAR 96FBGA

メーカーマイクロンテクノロジー株式会社
メーカー品番 #MT41J256M16HA-093:E
在庫状況6650

365 日間品質保証

7*24 日間の品質保証

90-時間単位のサービス保証

1日間のアフターサービス保証

仕様

属性	値
Part Status	Obsolete
Base Product Number	MT41J256M16
DigiKey Programmable	Not Verified
Memory Type	Volatile
Memory Format	DRAM
Technology	SDRAM - DDR3
Memory Size	4Gbit
Memory Organization	256M x 16
Memory Interface	Parallel
Clock Frequency	1.066 GHz
Voltage - Supply	1.425V ~ 1.575V
Operating Temperature	0°C ~ 95°C (TC)
Mounting Type	Surface Mount
Package	96-TFBGA
Supplier Device Package	96-FBGA (9x14)
Packaging	Tray
Access Time	20 ns

概要

Description

The MT41J256M16HA-093:E is a DRAM module manufactured by Micron Technology, part of their DDR3 SDRAM lineup. It is specifically a 4Gb (gigabit) memory chip, organized as 256M x 16 bits, offering high-speed data transfer rates and efficient power consumption, suitable for a wide range of applications including computing and telecommunications. The :E denotes a specific configuration or revision within the series.
This DRAM module has a clock frequency of 933 MHz, hence the 093 in its designation, which translates to a data rate of 1866 MT/s (Mega Transfers per second). It operates at a voltage of 1.5V, although it may support lower voltages for enhanced power efficiency in some configurations.
The MT41J256M16HA-093:E typically features a range of technologies aimed at improving performance and reliability, such as on-die termination (ODT) and dynamic on-chip thermal sensor (ODTS), which help in managing heat and maintaining data integrity. Its compact form factor and high-density storage make it an ideal choice for systems requiring more memory in limited space.

Equivalent

The MT41J256M16HA-093:E is a 4Gb DDR3L SDRAM chip from Micron. Equivalent products can be found from other manufacturers like Samsung, Hynix, and Kingston, offering similar DDR3L SDRAM specifications. Look for models like the Hynix H5TQ4G63AFR or the Samsung K4B4G1646E, which offer comparable features and performance. Ensure compatibility with voltage, speed, and package type when selecting an equivalent.

Features

The MT41J256M16HA-093:E is a DRAM component from Micron's DDR3 SDRAM family. Key features include:
1. Density and Organization: It offers a 4Gb density and is organized as 256 Meg x 16 bits.
2. Speed and Timings: Operates at a data rate of up to 1866 MT/s with a clock speed of 933 MHz. The CAS latency is typically CL13.
3. Voltage: Functions at a voltage of 1.35V, making it an energy-efficient choice for various applications.
4. Package: Available in a 96-ball FBGA (Fine-pitch Ball Grid Array) package, which is compact and suitable for high-density designs.
5. Temperature Range: The extended temperature range supports both commercial and industrial applications.
6. Features: Includes on-die termination (ODT), dynamic on-die temperature sensor, and self-refresh mode to conserve power.
7. Applications: Suitable for use in computing, networking, and industrial applications requiring efficient memory solutions.
These features make it a versatile component for a variety of high-performance and low-power applications.

Pinout

The MT41J256M16HA-093:E is a DDR3 SDRAM memory chip manufactured by Micron Technology. It is a 4 Gb (gigabit) device, organized as 256M x 16 bits. This chip typically comes in a 96-ball FBGA (Fine-pitch Ball Grid Array) package. The DDR3 SDRAM interface is designed to accommodate high-performance memory applications.
Key functions of the MT41J256M16HA-093:E include:
1. Data Storage and Retrieval: It is used for high-speed temporary storage of data and retrieval, a function critical for computing applications.

2. High-Speed Data Transfer: The device supports high-speed data transfer rates, typical of DDR3 memory, improving system performance.
3. Low-Power Consumption: Features like low voltage operation (1.5V) contribute to energy efficiency in devices.
4. JEDEC Standard Compliance: It complies with JEDEC standards for DDR3, ensuring compatibility with various systems.
5. Error Checking and Correcting (ECC): Some implementations may support ECC for data integrity.
These features make the MT41J256M16HA-093:E suitable for applications in computing, telecommunications, and consumer electronics where high bandwidth and performance are required.

Manufacturer

The MT41J256M16HA-093:E is manufactured by Micron Technology, Inc. Micron is an American company that specializes in the production of semiconductor devices, including dynamic random-access memory (DRAM), NAND flash memory, and other memory solutions. Founded in 1978 and headquartered in Boise, Idaho, Micron is one of the leading companies in the semiconductor industry, providing essential components for various electronic devices such as computers, smartphones, and servers. The company is recognized for its innovation in memory and storage solutions and plays a critical role in advancing technology across numerous sectors.

Application

The MT41J256M16HA-093:E is a DDR3 SDRAM chip commonly used in various applications due to its high-speed data processing capability and efficiency. Key application areas include:
1. Computing Devices: Used in desktops, laptops, and servers for main memory applications.
2. Networking Equipment: Supports routers and switches for data handling and buffering.
3. Consumer Electronics: Integrated in devices like smart TVs and gaming consoles for enhanced performance.
4. Embedded Systems: Utilized in automotive systems and industrial automation for reliable data management.
5. Telecommunications: Facilitates data storage and processing in base stations and other telecom equipment.
These areas benefit from the chip’s speed, power efficiency, and capacity.

Package

The MT41J256M16HA-093:E is a DRAM chip in a 96-ball FBGA (Fine-Pitch Ball Grid Array) package.

Frequently Asked Questions

Q: What type of DRAM is the MT41J256M16HA-093:E?
A: This is a DDR3 SDRAM, featuring volatile memory with a 4Gbit density organized as 256M x 16.

Q: What is the maximum clock frequency and access time?
A: It supports a 1.066 GHz clock frequency with a 20 ns access time, suitable for high-speed parallel data transfers.

Q: What voltage supply range does this component require?
A: It requires a supply voltage between 1.425V and 1.575V, standard for DDR3 memory modules.

Q: What is the operating temperature range?
A: The rated operating temperature is 0°C to 95°C (TC), making it suitable for commercial and industrial environments.

Q: What is the memory interface and package type?
A: It uses a parallel memory interface and comes in a 96-TFBGA package (96-FBGA 9x14mm) for surface mount assembly.

Q: Is this part still actively in production?
A: No, the part status is marked as Obsolete, so it may not be available for new designs. Check stock for legacy support.

Q: Can this memory be used for computing or networking applications?
A: Yes, as a DDR3 SDRAM with 4Gbit capacity, it is ideal for servers, networking, and embedded systems requiring high-density memory.