仕様
| 属性 | 値 |
| Package / Case | Tray |
| Part Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR3L |
| Memory Size | 8Gb (1G x 8) |
| Memory Interface | Parallel |
| Clock Frequency | 800 MHz |
| Access Time | 13.5 ns |
| Voltage - Supply | 1.283V ~ 1.45V |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
概要
Description
MT41K1G8TRF-125:E is a Micron Technology DDR3 SDRAM device. It stores 1 gigabit of data in an 128 M × 8 organization (one die, 1 Gbit total). It uses a synchronous DDR3 interface with standard DRAM features (row/column addressing, auto-refresh, burst operations, multiple banks). The “-125” is a specific speed grade, and the “:E” suffix typically indicates an extended/industrial-temperature or lead‑free variant, depending on the datasheet. Supply voltage is the DDR3 norm (about 1.5 V; some variants exist at other voltages—see the datasheet for exact specs). It is used as a single DRAM die on memory modules or in embedded systems, often alongside other DRAM dies to build larger densities. For precise timing, voltage, temperature range, packaging, and pinout, consult Micron’s MT41K1G8TRF-125:E datasheet.
Features
MT41K1G8TRF-125:E is a Micron DDR3L SDRAM device. Features:
- Type/density: DDR3L SDRAM, 1 Gbit per die, x8 data width (1Gbit × 8)
- Banks: 8 banks (with standard DDR3 bank organization)
- Speed grade: -125:E (up to DDR3-1333 MT/s, PC3-10600)
- Voltage: Low-voltage DDR3L operation (~1.25–1.35V)
- Temperature: Extended temperature version (-E): -40°C to 85°C
- Key features: Synchronous operation, auto-refresh, Partial Array Self-Refresh (PASR), ZQ calibration, MPR (Manufacturer Product Register), on-die termination, deep power-down
- Packaging/usage: Standard surface-mount DDR3L package suitable for mobile/embedded/industrial applications
Note: exact speed grade and package options can vary by lot; refer to datasheet for precise specifications.
- Type/density: DDR3L SDRAM, 1 Gbit per die, x8 data width (1Gbit × 8)
- Banks: 8 banks (with standard DDR3 bank organization)
- Speed grade: -125:E (up to DDR3-1333 MT/s, PC3-10600)
- Voltage: Low-voltage DDR3L operation (~1.25–1.35V)
- Temperature: Extended temperature version (-E): -40°C to 85°C
- Key features: Synchronous operation, auto-refresh, Partial Array Self-Refresh (PASR), ZQ calibration, MPR (Manufacturer Product Register), on-die termination, deep power-down
- Packaging/usage: Standard surface-mount DDR3L package suitable for mobile/embedded/industrial applications
Note: exact speed grade and package options can vary by lot; refer to datasheet for precise specifications.
Pinout
- Pin count: 96 pins (VFBGA-96)
- Function: Micron DDR3 SDRAM device (1 Gb, x8 organization), a synchronous DRAM used as system memory.
- Function: Micron DDR3 SDRAM device (1 Gb, x8 organization), a synchronous DRAM used as system memory.
Manufacturer
Manufacturer: Micron Technology, Inc.
What kind of company: An American multinational semiconductor company that designs and manufactures memory and storage products (DRAM, NAND/NOR flash) and related solutions.
What kind of company: An American multinational semiconductor company that designs and manufactures memory and storage products (DRAM, NAND/NOR flash) and related solutions.
Application
MT41K1G8TRF-125:E is a Micron DDR3 SDRAM device (1 Gb, x8). Typical application areas:
- Desktop and notebook main memory
- Servers, storage, and enterprise hardware
- Embedded systems and industrial controllers
- Networking and telecom equipment
- Consumer electronics (set-top boxes, media players, game consoles)
- Automotive electronics and ruggedized applications needing high-speed memory
- Desktop and notebook main memory
- Servers, storage, and enterprise hardware
- Embedded systems and industrial controllers
- Networking and telecom equipment
- Consumer electronics (set-top boxes, media players, game consoles)
- Automotive electronics and ruggedized applications needing high-speed memory
Package
Fine-pitched FBGA (ball-grid array) package.
