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MT41K512M16HA-107
+BOMDRAM 8G - monolithic die 512M x 16 1.35V(1.283-1.45V) 933MHz DDR3-1866bps/pin Commercial (Extended) (0 95 C) 96-ball FBGA DDR3
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メーカー連合メモリ
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メーカー品番 #MT41K512M16HA-107
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データシート MT41K512M16HA-107 DataSheet
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在庫状況20314
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
概要
Description
Operating at a data rate of up to 1866 MT/s (million transfers per second) and featuring a CAS latency of 10, the MT41K512M16HA-107 provides a balance between speed and power consumption. The memory is built with an energy-efficient design, supporting a voltage range of 1.425V to 1.575V, which aids in reducing power usage and heat generation.
This DRAM module includes enhancements such as on-die termination (ODT) and dynamic thermal management, enhancing its reliability and performance in demanding environments. Its design adheres to JEDEC standards, ensuring compatibility across a wide range of systems. Overall, the MT41K512M16HA-107 is a versatile and effective option for memory-intensive applications.
Equivalent
1. Hynix H5TC8G83AMR-PBA
2. Samsung K4B8G1646D-BCK0
3. Nanya NT5CB512M16EP-DI
These chips should match in key specifications such as density, package, speed, and voltage. Always verify compatibility with your specific application requirements.
Features
1. Capacity: 8Gb (gigabits), organized as 512M x 16.
2. Voltage: Operates at a low voltage of 1.35V, with backward compatibility to 1.5V.
3. Speed: Offers data rates of up to 1866 MT/s (megatransfers per second).
4. Package: Available in a 96-ball FBGA (Fine-pitch Ball Grid Array) package.
5. Temperature Range: Supports standard and industrial temperature ranges.
6. Bank Architecture: Comprises 8 internal banks for efficient data management.
7. Burst Lengths: Supports burst lengths of 4 or 8 for data transfer.
8. Refresh: Features auto-refresh and self-refresh modes to maintain data integrity.
9. Low Power: Designed for reduced power consumption, ideal for laptops and energy-efficient applications.
This DRAM chip is suitable for high-performance and low-power computing applications, offering flexibility and efficiency for various systems.
Pinout
The primary function of this device is to provide high-speed data storage and retrieval for various computing applications. It operates with a supply voltage of 1.5V and is designed to support a data rate of 2133 MT/s (million transfers per second), depending on the specific speed grade.
The device includes several key features, such as a double-data-rate architecture, programmable read or write burst lengths, and a bi-directional differential data strobe. The 16-bit interface allows for data transfers in a 16-bit parallel format, providing efficient access to data. It is commonly used in applications that require high-performance memory solutions, such as PCs, networking equipment, and servers.