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MT41K512M8RH-125:E

Name: MT41K512M8RH-125:E
Rating: 4.8 (15 reviews)

+BOM

IC DRAM 4GBIT PARALLEL 78FBGA

メーカーマイクロンテクノロジー株式会社
メーカー品番 #MT41K512M8RH-125:E
在庫状況4685

365 日間品質保証

7*24 日間の品質保証

90-時間単位のサービス保証

1日間のアフターサービス保証

仕様

属性	値
Part Status	Obsolete
Base Product Number	MT41K512M8
DigiKey Programmable	Not Verified
Memory Type	Volatile
Memory Format	DRAM
Technology	SDRAM - DDR3L
Memory Size	4Gbit
Memory Organization	512M x 8
Memory Interface	Parallel
Clock Frequency	800 MHz
Voltage - Supply	1.283V ~ 1.45V
Operating Temperature	0°C ~ 95°C (TC)
Mounting Type	Surface Mount
Package	78-TFBGA
Supplier Device Package	78-FBGA (9x10.5)
Packaging	Tray
Access Time	13.75 ns

概要

Description

The MT41K512M8RH-125:E is a DRAM (Dynamic Random-Access Memory) component often used in high-performance computing and consumer electronics. It is part of the DDR3L SDRAM family, which is known for its lower power consumption compared to standard DDR3, making it suitable for energy-efficient applications. This particular model has a storage capacity of 4Gb (512M x 8) and operates with a data rate of 1600 MT/s (megatransfers per second), offering a balanced performance for various computing tasks.
The module features a 1.35V operating voltage, which contributes to reduced power consumption and heat generation, beneficial for both portable and stationary devices. The "RH" in the part number indicates it is designed for high-reliability applications, often important in mission-critical systems. Additionally, the "125:E" refers to specific speed and timing characteristics, with CAS latency and other parameters optimized for efficient data processing. Overall, the MT41K512M8RH-125:E is a versatile and reliable memory solution for applications ranging from personal computers to advanced industrial systems.

Equivalent

The MT41K512M8RH-125:E is a DDR3 SDRAM chip by Micron. Equivalent products would include DDR3 SDRAM chips from other manufacturers with similar specifications, such as:
1. Hynix H5TQ4G63AFR
2. Samsung K4B4G0846D
3. Kingston D2516EC4BXGGB
4. Nanya NT5CB128M8BN
These alternatives should have comparable features like speed, capacity, and voltage requirements. Always verify the specific requirements of your application to ensure compatibility.

Features

The MT41K512M8RH-125:E is a DDR3L SDRAM memory chip designed by Micron Technology. Key features include:
1. Density and Configuration: It offers a high density of 4Gb, organized as 512M x 8.
2. Low Voltage: Operates at a lower voltage of 1.35V (DDR3L), providing better energy efficiency compared to standard DDR3 which operates at 1.5V.
3. Speed: The device can achieve data rates up to 1600 MT/s (megatransfers per second), ensuring efficient performance for applications requiring fast data processing.
4. Package: It is available in a 78-ball FBGA (Fine-pitch Ball Grid Array) package, which is compact and suitable for integration into a variety of systems.
5. Reliability Features: Includes on-die termination (ODT) for improved signal integrity and error correction code (ECC) support for enhanced data reliability.
6. Thermal Management: Designed to handle varying temperature ranges, ensuring stable operation under different thermal conditions.
These features make the MT41K512M8RH-125:E suitable for a wide range of applications, including computing, networking, and consumer electronics, where power efficiency and high-speed data access are crucial.

Pinout

The MT41K512M8RH-125:E is a DRAM chip from Micron Technology, specifically a DDR3 SDRAM. It typically comes in a 78-ball FBGA (Fine-pitch Ball Grid Array) package. The pin count for this type of package is 78.
As for its function, the MT41K512M8RH-125:E is used primarily for memory in computing systems. It offers 4 Gigabits (Gb) of storage capacity, organized as 512 Meg x 8 bits. It operates at a clock rate of 1600 MT/s (megatransfers per second), making it suitable for applications requiring high-speed data transfer. This DRAM is used in a variety of electronic devices where memory performance and efficiency are critical, including computers, networking devices, and consumer electronics. The chip supports standard DDR3 features such as on-die termination (ODT) and auto-refresh mode, ensuring enhanced performance and reliability in various operating conditions.

Manufacturer

The MT41K512M8RH-125:E is a DRAM chip manufactured by Micron Technology, Inc. Micron is a leading global company specializing in the production of semiconductor devices, particularly memory and storage solutions. Founded in 1978 and headquartered in Boise, Idaho, Micron develops and produces a wide array of products such as DRAM, NAND flash memory, and solid-state drives (SSDs). These products are used in computing, networking, and mobile applications, serving industries such as data centers, automotive, and consumer electronics.
Micron is recognized for its innovation in memory technology, continuously advancing the performance, efficiency, and capacity of its products to meet the growing demands of modern technology. It operates worldwide, with manufacturing and research facilities in North America, Asia, and Europe, making it one of the largest memory manufacturers globally. The company plays a significant role in the semiconductor industry, contributing to technological advancements and supporting the infrastructure of digital economies.

Application

The MT41K512M8RH-125:E is a high-performance DRAM chip commonly used in computing and electronic applications that require fast data access and processing. Its application areas include data centers for server memory, high-performance computing environments, networking equipment, and storage solutions. It is also used in consumer electronics like PCs, gaming consoles, and laptops to enhance speed and efficiency. Additionally, it finds usage in automotive and industrial applications where reliable and efficient memory solutions are necessary. Its versatility and high-speed capabilities make it suitable for a wide range of applications requiring robust memory performance.

Package

The MT41K512M8RH-125:E is a DRAM chip from Micron, specifically a DDR3L SDRAM. It comes in a 78-ball Fine-Pitch Ball Grid Array (FBGA) package. This packaging type is compact, suitable for high-density memory applications, and provides enhanced thermal and electrical performance.

Frequently Asked Questions

Q: Is this DDR3L memory compatible with 1.5V standard DDR3 systems?
A: Yes, DDR3L supports both 1.35V low voltage operation and 1.5V standard operation, but optimal performance requires 1.283V–1.45V supply.

Q: What is the maximum data transfer rate for the 800 MHz clock frequency?
A: With a DDR (Double Data Rate) interface, 800 MHz clock yields an effective data rate of 1600 MT/s per pin.

Q: What is the significance of the 13.75 ns access time in this DRAM?
A: It specifies the tRCD (RAS to CAS delay) timing parameter, determining the minimum delay between row activate and column read commands.

Q: Can this component handle extended temperature ranges for industrial applications?
A: No, its operating temperature range is 0°C to 95°C (TC), suitable for commercial applications, not extended industrial range.

Q: What is the memory organization of the 4Gbit device?
A: It is organized as 512M words x 8 bits per word, ideal for 8-bit wide data bus applications requiring high density.

Q: What package does this DRAM use for PCB mounting?
A: It uses a 78-ball TFBGA (Thin Fine-Pitch Ball Grid Array) package, specifically 78-FBGA with 9x10.5 mm body size, surface mount.

Q: Is the MT41K512M8RH-125:E still available for new designs?
A: No, its part status is "Obsolete". It is recommended for legacy system maintenance or replacement, not for new product designs.