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MT47H64M16NF-25E:M

Name: MT47H64M16NF-25E:M
Rating: 4.8 (15 reviews)

+BOM

IC DRAM 1GBIT PARALLEL 84FBGA

メーカーマイクロンテクノロジー株式会社
メーカー品番 #MT47H64M16NF-25E:M
在庫状況2927

365 日間品質保証

7*24 日間の品質保証

90-時間単位のサービス保証

1日間のアフターサービス保証

仕様

属性	値
Part Status	Active
Base Product Number	MT47H64M16
Digi Key Programmable	Not Verified
Memory Type	Volatile
Memory Format	DRAM
Technology	SDRAM - DDR2
Memory Size	1Gbit
Memory Organization	64M x 16
Memory Interface	Parallel
Clock Frequency	400 MHz
Write Cycle Time - Word, Page	15ns
Voltage - Supply	1.7V ~ 1.9V
Operating Temperature	0°C ~ 85°C (TC)
Mounting Type	Surface Mount
Package / Case	84-TFBGA
Supplier Device Package	84-FBGA (8x12.5)
Packaging	Tray
Access Time	400 ps

概要

Description

The MT47H64M16NF-25E:M is a DRAM chip from Micron Technology, part of the DDR2 SDRAM family. It offers a storage capacity of 1Gb (gigabit) arranged in a configuration of 64M x 16 bits. This memory module is designed to operate at a clock frequency of 400 MHz, and it supports a data transfer rate of up to 800 MT/s (megatransfers per second). The ":M" suffix indicates a specific version or binning of the chip, often related to temperature range, refresh rate, or other operational specifics.
This chip features a CAS latency of 5 and operates at a voltage of 1.8V, making it suitable for applications requiring efficient power usage. It is commonly used in various consumer electronics, computing devices, and embedded systems where memory performance and reliability are critical. The chip's compact form factor and robust performance make it ideal for applications requiring high-density memory with moderate speed.

Equivalent

The MT47H64M16NF-25E:M is a 1Gb DDR2 SDRAM chip from Micron. Equivalent products would include DDR2 SDRAM chips with similar specifications from other manufacturers like Samsung's K4T1G164QE, Hynix's HY5PS1G1631C, and Nanya's NT5TU64M16GG. Ensure they match in terms of capacity (1Gb), speed (DDR2-800), voltage (1.8V), and package type to be considered direct equivalents. Always verify compatibility with your specific application requirements before substituting.

Features

The MT47H64M16NF-25E:M is a DRAM chip belonging to Micron's DDR2 SDRAM series. Key features include:
1. Density and Organization: It has a density of 1 Gb and is organized as 64M x 16.
2. Speed: The device operates at a clock speed of 400 MHz (DDR2-800), with a data transfer rate of up to 800 MT/s.
3. Package: Typically comes in a 84-ball FBGA package.
4. Voltage: It operates at a standard DDR2 voltage of 1.8V.
5. Latency: Offers CAS latency (CL) options to optimize performance.
6. Compatibility: Compliant with JEDEC standards, ensuring broad compatibility.
7. Features: Includes features like on-die termination (ODT), programmable burst lengths (BL), and auto-refresh/self-refresh modes for power efficiency and reliability.
8. Applications: Suited for high-performance computing tasks, consumer electronics, networking, and other applications requiring fast and efficient memory solutions.
These features make the MT47H64M16NF-25E:M a versatile choice for systems needing robust and fast memory capabilities.

Pinout

The MT47H64M16NF-25E:M is a DDR2 SDRAM component manufactured by Micron Technology. It has a 84-ball FBGA (Fine-Pitch Ball Grid Array) package. The part is organized as 64 Meg x 16, implying that it is a 1 Gigabit chip.
Key functions of this DDR2 SDRAM include:
1. Data Storage: It provides high-speed data storage and retrieval capabilities.
2. Data Transfer: Supports double data rate (DDR) transfers, meaning data is transferred on both the rising and falling edges of the clock signal.
3. Latency Reduction: Offers various CAS latency options to optimize performance.
4. Error Correction: May include ECC functionality depending on the system design.
5. Power Management: Supports features like auto-refresh and power-down modes to manage power consumption efficiently.
Overall, the MT47H64M16NF-25E:M is designed for high-performance memory applications requiring efficient data handling and power management.

Manufacturer

The MT47H64M16NF-25E:M is manufactured by Micron Technology, Inc. Micron is an American company that specializes in the production of semiconductor devices, including dynamic random-access memory (DRAM), flash memory, and solid-state drives (SSDs). As one of the largest memory manufacturers in the world, Micron plays a crucial role in providing memory solutions that are utilized in a wide range of electronic devices, from personal computers to smartphones and servers. The company is known for its innovations in memory technology and contributes significantly to advancements in the semiconductor industry.

Application

The MT47H64M16NF-25E:M is a type of DDR2 SDRAM chip. It is typically used in applications requiring efficient and fast memory solutions. Common application areas include computers and laptops for main memory, networking equipment, consumer electronics such as gaming consoles and smart TVs, and industrial automation systems. It is also employed in data storage solutions, such as SSDs, and in telecommunications equipment where quick data access and processing are essential. The chip supports higher bandwidth and performance with lower power consumption, making it suitable for devices that require efficient energy use while maintaining quick access to data.

Package

The MT47H64M16NF-25E:M is a DRAM chip with a package type identified as 84-ball FBGA (Fine-Pitch Ball Grid Array).

Frequently Asked Questions

Q: What is the memory size and organization of the MT47H64M16NF-25E:M?
A: It has 1Gbit memory size, organized as 64M x 16, suitable for high-density parallel data applications.

Q: What is the clock frequency and access time of this DDR2 SDRAM?
A: It supports a 400 MHz clock frequency with a 400 ps access time, ensuring fast data throughput.

Q: What voltage supply range does this component require?
A: It operates with a supply voltage of 1.7V to 1.9V, making it energy-efficient for low-power designs.

Q: Is this component suitable for industrial temperature ranges?
A: Yes, it operates from 0°C to 85°C (TC), covering commercial and extended temperature applications.

Q: What is the package type and mounting style?
A: It comes in an 84-TFBGA package (8x12.5mm) with surface mount, ideal for compact PCB layouts.

Q: What is the write cycle time for word or page operations?
A: The write cycle time is 15ns for word or page operations, ensuring reliable data programming.

Q: Is the memory interface parallel or serial?
A: It uses a parallel memory interface, standard for DDR2 SDRAM in embedded and computing systems.