MX29GL256FDT2I-11G

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MX29GL256FDT2I-11G

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IC FLASH 256MBIT PARALLEL 56TSOP

365 日間品質保証

7*24 日間の品質保証

90-時間単位のサービス保証

1日間のアフターサービス保証

仕様

属性
Series MX29GL
Part Status Active
Base Product Number MX29GL256
DigiKey Programmable Not Verified
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NOR
Memory Size 256Mbit
Memory Organization 32M x 8
Memory Interface Parallel
Write Cycle Time - Word, Page 110ns
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package 56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package 56-TSOP
Packaging Tray
Access Time 110 ns

概要

Description

The MX29GL256FDT2I-11G is a 256 Megabit (32 Megabyte) NOR Flash memory device designed for use in a wide range of applications that require reliable non-volatile storage. Manufactured by Macronix, this flash memory utilizes CMOS technology to deliver high performance and low power consumption. It features a 3V power supply, making it suitable for battery-powered devices.
Key features include a fast access time of 110 ns, allowing for quick data retrieval, and a 16-bit data bus for efficient data handling. The device supports sector erase and byte programming, offering flexibility in data management. It utilizes an Address/Data multiplexed interface, simplifying the device's integration into various systems.
The MX29GL256FDT2I-11G is organized into 128 sectors, each capable of individual erase operations, enhancing its usefulness in applications requiring frequent data updates. With an industrial temperature range of -40°C to 85°C, the device is suited for use in harsh environments. It also supports common flash memory interface (CFI) standards, ensuring compatibility with a wide range of software and hardware platforms.

Equivalent

The MX29GL256FDT2I-11G is a 256Mb NOR Flash memory chip by Macronix. Equivalent products are generally other 256Mb NOR Flash chips with similar specifications, such as those from manufacturers like:
1. Micron MT28EW256ABA
2. Cypress (now Infineon) S29GL256S
3. Winbond W29GL256S
These alternatives should have comparable interface, voltage, and temperature specifications. Always verify compatibility based on the specific application requirements.

Features

The MX29GL256FDT2I-11G is a 256 Megabit (32 Megabyte) parallel NOR Flash memory device. Key features include:
1. Architecture: Organized into 128K-word sectors, providing flexible block management and ease of storage organization.
2. Voltage Range: Operates at a voltage range of 2.7V to 3.6V, suitable for a variety of applications.
3. Access Time: The device has a fast access time of 110 ns, ensuring quick data retrieval.
4. Interface: Utilizes a parallel interface, facilitating integration into systems with ease.
5. Data Protection: Features hardware and software data protection mechanisms, enhancing reliability and ensuring data integrity.
6. Erase/Program Cycles: Supports a high endurance of up to 100,000 erase/program cycles per sector, making it suitable for frequent updates.
7. Temperature Range: Industrial temperature range from -40°C to +85°C, allowing deployment in harsh environments.
8. Package: Available in a 56-pin TSOP package, providing a balance between size and ease of handling for PCB designs.
These characteristics make it ideal for embedded systems, consumer electronics, and industrial automation applications.

Pinout

The MX29GL256FDT2I-11G is a 256 Megabit (32 Megabyte) flash memory chip from Macronix. It is organized as 16M x 16 bits or 32M x 8 bits and uses a 3V power supply. This chip is part of the MX29GL family, which is aimed at providing reliable storage for various electronic applications.
The MX29GL256FDT2I-11G comes in a 56-pin TSOP (Thin Small Outline Package) configuration. The pins include address pins (A0-A23), data pins (DQ0-DQ15), control pins such as Chip Enable (CE#), Write Enable (WE#), Output Enable (OE#), Reset (RESET#), and others like Ready/Busy (RY/BY#). These pins facilitate reading, writing, and erasing operations, making the chip suitable for embedded systems and other applications requiring non-volatile memory.
This chip offers fast read and program times, low power consumption, and high reliability, making it ideal for use in embedded systems, networking, and storage devices, among other applications.

Manufacturer

The MX29GL256FDT2I-11G is manufactured by Macronix International Co., Ltd. Macronix is a leading integrated device manufacturer in the non-volatile memory (NVM) market. The company specializes in designing, developing, and manufacturing a wide range of memory products, including NOR Flash, NAND Flash, and ROM chips. Macronix serves various sectors, including consumer electronics, automotive, industrial, and communications. It is known for providing reliable and high-performance memory solutions to meet diverse industry needs. The company is headquartered in Hsinchu, Taiwan, and has a global presence with offices and manufacturing facilities in multiple countries.

Application

The MX29GL256FDT2I-11G is a 256Mb NOR Flash memory chip used in various applications due to its high reliability and fast read speeds. Key application areas include:
1. Embedded Systems: Used in firmware storage for industrial machinery and automation systems.
2. Consumer Electronics: Common in digital cameras, set-top boxes, and gaming consoles for firmware and software storage.
3. Telecommunications: Utilized in network equipment for secure data storage.
4. Automotive: Employed in navigation systems and infotainment systems for reliable data retention.
5. Medical Devices: Used in medical instrumentation for storing critical software.
These applications leverage the chip's fast access times and non-volatility for efficient performance.

Package

The MX29GL256FDT2I-11G is a surface-mount flash memory device in a TSOP (Thin Small Outline Package) with 56 pins. It's designed for use in applications requiring high-density storage with fast read and write capabilities.

Frequently Asked Questions


Q: What is the memory density and organization of the MX29GL256FDT2I-11G?
A: It is a 256Mbit NOR Flash memory, organized as 32M x 8 bits for parallel interface access.


Q: What is the supply voltage range for this device?
A: The operating voltage range is 2.7V to 3.6V, making it suitable for low-power embedded systems.


Q: What is the typical access and write cycle time?
A: The random access time is 110 ns, and the write cycle time per word or page is also 110 ns.


Q: In which temperature range can this component operate reliably?
A: It supports an industrial temperature range from -40°C to +85°C (TA).


Q: What package and mounting type does this part use?
A: It comes in a 56-TFSOP (18.40mm width) surface-mount package, supplied as a tray.


Q: Is this memory component programmable or verified by DigiKey?
A: It is listed as "Not Verified" for DigiKey Programmable, meaning it is not pre-programmed by the distributor.


Q: What is the memory interface and technology type?
A: It uses a parallel memory interface with NOR Flash technology for non-volatile storage.


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