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NCE6080K
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メーカー無錫NCEパワー半導体
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メーカー品番 #NCE6080K
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データシート NCE6080K DataSheet
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在庫状況3157
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | TO-252-2 |
| OperatingTemperature | -55℃~+175℃ |
| Current-ContinuousDrain(Id) | 80A |
| Pd-PowerDissipation | 110W |
| DraintoSourceVoltage | 60V |
| RDS(on) | 8.5mΩ@10V,20A |
| GateThresholdVoltage(Vgs(th)@Id) | 4V |
| Type | 1 N-channel |
| GateCharge(Qg) | 60nC |
| InputCapacitance(Ciss@Vds) | 4nF@30V |
| ReverseTransferCapacitance(Crss@Vds) | 210pF@30V |
概要
Description
Students can expect to engage with both theoretical concepts and practical applications, often utilizing software tools for modeling and simulation. The course might also involve project work, where students apply learned concepts to real-world engineering challenges. Prerequisites often include foundational courses in structural analysis and design, ensuring that participants have a solid baseline of knowledge.
NCE6080K is ideal for graduate students pursuing careers in structural engineering, providing them with the skills needed to tackle modern engineering problems and prepare for roles in academia, research, or industry.
Equivalent
Features
1. Low On-Resistance: It offers a low R_DS(on), which means improved efficiency by minimizing power loss during operation.
2. High-Speed Switching: Enhances performance in high-frequency applications due to its fast switching capabilities.
3. Robust Design: Built to withstand high voltages and currents, making it suitable for demanding applications.
4. Thermal Performance: Efficient heat dissipation due to its package design, which helps maintain stability under high power conditions.
5. High Reliability: Designed for longevity with robust construction to ensure consistent performance over time.
6. Application Versatility: Suitable for use in a variety of applications including power management, DC-DC converters, motor drivers, and more.
These features make the NCE6080K a versatile and reliable choice for power management in electronic devices.
Pinout
1. Drain (D): This pin is the terminal through which the main current flows from the load to the source when the MOSFET is on.
2. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows or stops current flow through the drain-source channel.
3. Source (S): This is the terminal through which current exits the MOSFET.
These devices are widely used in power management applications due to their high efficiency and fast switching capabilities. Always refer to the specific datasheet for the NCE6080K for detailed information and to confirm the package type and pin configuration, as variations can exist.