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NDS355AN
+BOMMOSFET N-CH 30V 1.7A SUPERSOT3
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メーカーオンセミコンダクター社
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メーカー品番 #NDS355AN
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データシート NDS355AN DataSheet
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パッケージ SOT-3
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在庫状況3007
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 1.7A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 85mOhm @ 1.9A, 10V |
| Vgs(th)(Max) @ Id | 2V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 5 nC @ 5 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 195 pF @ 15 V |
| Power Dissipation (Max) | 500mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 |
概要
Description
The introduction to NDS355AN would cover fundamental concepts such as network architecture, protocols, and security measures. Students might learn about various network models, including LAN, WAN, and internet systems, along with the tools and techniques used to secure these networks against cyber threats. The course could also delve into current issues in network security, such as encryption, intrusion detection, and the management of secure communications.
Hands-on experience might be part of the curriculum, allowing students to work with network simulation tools and engage in real-world problem solving. Ultimately, NDS355AN aims to equip students with the necessary skills and knowledge to effectively design, manage, and secure modern network infrastructures.
Equivalent
1. 2N7002
2. BSS138
3. IRLML2502
4. 2N7000
5. BSS123
These components have comparable voltage, current ratings, and package types, making them potential substitutes. However, always verify the specific parameters and performance for your application.
Features
1. Low On-Resistance: It features a low R_DS(on) which minimizes power loss, enhancing efficiency in power management applications.
2. High-Speed Switching: The device supports fast switching speeds, making it suitable for high-frequency applications.
3. Low Gate Charge: This allows for efficient operation with minimal drive power, beneficial in battery-powered devices.
4. Surface Mount Package: Typically available in a compact SOT-23 package, making it ideal for space-constrained applications.
5. Thermal Performance: Designed to handle significant power dissipation with adequate heat management, due to its low thermal resistance.
These attributes make the NDS355AN suitable for use in a variety of applications, including DC-DC converters, motor drives, and load switches.
Pinout
1. Gate (G): This pin is used to control the MOSFET's conduction state. Applying a voltage above a certain threshold to the gate allows current to flow between the drain and source.
2. Source (S): Current enters the MOSFET through this pin when the transistor is in the ON state. It is typically connected to ground in N-channel configurations.
3. Drain (D): Current exits the MOSFET through this pin. It is connected to the load in most circuits.
In summary, the NDS355AN MOSFET has 3 pins (Gate, Source, and Drain) in a SOT-23 package, and it functions as a switch or amplifier, controlling current flow in electronic circuits.