仕様
| 属性 | 値 |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101, SWITCHMODE™ |
| ProductStatus | Obsolete |
| DiodeConfiguration | 1 Pair Common Cathode |
| DiodeType | Schottky |
| Voltage-DCReverse(Vr)(Max) | 60 V |
| Current-AverageRectified(Io)(perDiode) | 3A |
| Voltage-Forward(Vf)(Max)@If | 700 mV @ 3 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Current-ReverseLeakage@Vr | 100 µA @ 60 V |
| OperatingTemperature-Junction | -65°C ~ 175°C |
| MountingType | Surface Mount |
| Package/Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
概要
Description
The NRVBD660CTT4G is a Schottky barrier rectifier diode from ON Semiconductor, designed for high-efficiency power applications. Key features include:
- Voltage Rating: 60V (reverse voltage)
- Current Rating: 6A (average forward current)
- Low Forward Voltage Drop: ~0.49V (typical at 3A)
- Fast Switching: Minimizes switching losses
- Compact Package: DPAK (TO-252) for efficient PCB mounting
Ideal for DC-DC converters, power supplies, and reverse polarity protection, it offers improved thermal performance and efficiency compared to standard diodes. Its Schottky design ensures lower power dissipation, making it suitable for high-frequency applications.
For detailed specs, refer to the datasheet from ON Semiconductor.
- Voltage Rating: 60V (reverse voltage)
- Current Rating: 6A (average forward current)
- Low Forward Voltage Drop: ~0.49V (typical at 3A)
- Fast Switching: Minimizes switching losses
- Compact Package: DPAK (TO-252) for efficient PCB mounting
Ideal for DC-DC converters, power supplies, and reverse polarity protection, it offers improved thermal performance and efficiency compared to standard diodes. Its Schottky design ensures lower power dissipation, making it suitable for high-frequency applications.
For detailed specs, refer to the datasheet from ON Semiconductor.
Features
The NRVBD660CTT4G is a Schottky barrier diode with the following key features:
- High Current Capacity: 6A average forward current.
- Low Forward Voltage Drop: ~0.49V (typical at 3A), improving efficiency.
- Reverse Voltage: 60V, suitable for medium-voltage applications.
- Fast Switching: Schottky design ensures quick recovery, reducing switching losses.
- Low Leakage Current: Minimizes power loss in reverse bias.
- Dual Common Cathode Configuration: Two diodes in a single TO-252 (DPAK) package, saving space.
- High Temperature Operation: Rated for up to 150°C junction temperature.
Ideal for power rectification, DC-DC converters, and reverse polarity protection.
- High Current Capacity: 6A average forward current.
- Low Forward Voltage Drop: ~0.49V (typical at 3A), improving efficiency.
- Reverse Voltage: 60V, suitable for medium-voltage applications.
- Fast Switching: Schottky design ensures quick recovery, reducing switching losses.
- Low Leakage Current: Minimizes power loss in reverse bias.
- Dual Common Cathode Configuration: Two diodes in a single TO-252 (DPAK) package, saving space.
- High Temperature Operation: Rated for up to 150°C junction temperature.
Ideal for power rectification, DC-DC converters, and reverse polarity protection.
Pinout
The NRVBD660CTT4G is a Schottky barrier rectifier diode in a TO-263AB (D²PAK) package.
- Pin Count: 3 pins (though typically, only two are active—anode and cathode; the third is often a thermal pad or inactive).
- Function: Designed for high-efficiency rectification in power applications, with:
- Low forward voltage drop (reduces power loss).
- High current capability (up to 60A).
- Fast switching for use in DC-DC converters, SMPS, and reverse polarity protection.
Key specs:
- Voltage Rating: 60V
- Average Rectified Current: 60A
- Operating Temperature: -65°C to +175°C
Concise and functional for power designs.
- Pin Count: 3 pins (though typically, only two are active—anode and cathode; the third is often a thermal pad or inactive).
- Function: Designed for high-efficiency rectification in power applications, with:
- Low forward voltage drop (reduces power loss).
- High current capability (up to 60A).
- Fast switching for use in DC-DC converters, SMPS, and reverse polarity protection.
Key specs:
- Voltage Rating: 60V
- Average Rectified Current: 60A
- Operating Temperature: -65°C to +175°C
Concise and functional for power designs.
Manufacturer
The NRVBD660CTT4G is a Schottky diode manufactured by ON Semiconductor, a leading global supplier of power management and semiconductor solutions.
ON Semiconductor specializes in energy-efficient technologies for automotive, industrial, and consumer applications. Known for high-performance components, the company serves diverse markets with a focus on innovation and reliability.
The NRVBD660CTT4G is part of their rectifier portfolio, designed for efficient power conversion.
ON Semiconductor specializes in energy-efficient technologies for automotive, industrial, and consumer applications. Known for high-performance components, the company serves diverse markets with a focus on innovation and reliability.
The NRVBD660CTT4G is part of their rectifier portfolio, designed for efficient power conversion.
Package
The NRVBD660CTT4G is a Schottky diode in a D2PAK (TO-263-2) surface-mount package. It features a low forward voltage drop and high current capability, commonly used in power rectification and switching applications. The package is designed for efficient thermal performance with an exposed pad for heat dissipation.
