画像は参考用です
NT5CC256M8JQ-EK
+BOM1.283V~1.45V 2Gbit 933MHz DDR3 SDRAM Memory (ICs) RoHS
-
メーカー南アジアのテクノロジー
-
メーカー品番 #NT5CC256M8JQ-EK
-
データシート NT5CC256M8JQ-EK DataSheet
-
在庫状況8050
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| ClockFrequency | 933MHz |
| MemoryFormat | DDR3 SDRAM |
| MemorySize | 2Gbit |
| Operatingtemperature | 0℃~+95℃ |
| Voltage-Supply | 1.283V~1.45V |
概要
Description
Key features of the NT5CC256M8JQ-EK include ease of integration into memory modules due to its standardized architecture, low power consumption compared to its predecessors, and high data transfer rates, which enhance system performance. The DDR3 technology enables the chip to double the data rate of DDR2 while maintaining lower voltage requirements, which is crucial for energy-efficient operation.
This memory chip is designed to operate effectively at various clock speeds and supports features like on-die termination and dynamic on-die termination. The NT5CC256M8JQ-EK is ideal for applications requiring reliable and efficient memory performance, contributing to the overall speed and responsiveness of the system it is implemented in.
Equivalent
1. Samsung K4B2G0846D
2. Hynix H5TQ2G83CFR
3. Micron MT41J256M8HX
4. Kingston D2516EC4BXGJD
These equivalents are based on similar specifications like density, form factor, and performance characteristics. However, always verify compatibility with the specific requirements of your application or system.
Features
1. Capacity: 2Gb (Gigabit).
2. Type: DDR3 SDRAM (Synchronous Dynamic Random-Access Memory).
3. Data Rate: Supports data rates up to 1600 MT/s (Megatransfers per second).
4. Voltage: Operates at a low voltage of 1.35V to 1.5V, enhancing energy efficiency.
5. Organization: Configured as 256M x 8, offering wide data paths for faster processing.
6. Package: Available in a standard 78-ball FBGA (Fine-Pitch Ball Grid Array) package, optimizing space and enabling better electrical performance.
7. Temperature Range: Suitable for commercial temperature ranges, typically 0°C to 95°C.
8. Compatibility: Designed for compatibility with a wide range of computing and electronic devices.
9. Reliability: Implements Error Correction Code (ECC) for increased data integrity.
These features make the NT5CC256M8JQ-EK suitable for various applications requiring reliable and efficient memory performance, including computing and networking solutions.
Pinout
The primary function of this memory chip is to provide high-speed data storage and retrieval for digital systems, often used in computers, servers, and other electronic devices requiring fast and efficient memory functionality. It supports a clock frequency of up to 1600 MHz, making it suitable for a range of high-performance applications.
The pin configuration includes pins for power, ground, data input/output, address inputs, and control signals, necessary for operation within a memory subsystem. Each pin serves a specific role, from transmitting data to ensuring proper communication and power management within the device.
Manufacturer
Application
Package
Frequently Asked Questions
Q: What is the memory density and organization of the NT5CC256M8JQ-EK?
A: It is a 2Gbit DDR3 SDRAM organized as 256M x 8, suitable for applications requiring high-density memory.
Q: What is the maximum operating frequency of this DDR3 memory?
A: The device supports a clock frequency of 933MHz, equivalent to DDR3-1866 data rate for high-speed data transfer.
Q: What is the recommended operating voltage range for this component?
A: The supply voltage range is 1.283V to 1.45V, compliant with standard DDR3L (low voltage) specifications.
Q: Can it operate in high-temperature environments?
A: Yes, with an operating temperature range of 0°C to +95°C, it is suitable for industrial or extended-temperature applications.
Q: Is this memory compatible with DDR3L systems?
A: Yes, the 1.283V to 1.45V supply voltage range ensures full compatibility with 1.35V DDR3L platforms, offering power savings.