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NTB082N65S3F
+BOMMOSFET N-CH 650V 40A D2PAK
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メーカーオンセミコンダクター社
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メーカー品番 #NTB082N65S3F
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在庫状況9578
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Series | SuperFET® III |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 82mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 4mA |
| Gate Charge (Qg) (Max) @ Vgs | 81 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 3410 pF @ 400 V |
| Power Dissipation (Max) | 313W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-263 (D2PAK) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Base Product Number | NTB082 |
概要
Description
The NTB082N65S3F is a high-performance N-channel MOSFET designed for power management applications. With a voltage rating of 650V and a current capacity of 82A, it is suitable for use in various demanding environments, including telecommunications, industrial automation, and renewable energy systems.
This MOSFET features low gate charge and on-resistance, which enhances its efficiency and reduces power losses during operation. It is built using advanced trench technology, improving its switching characteristics and thermal performance. The device is typically housed in a TO-247 package, facilitating effective heat dissipation.
Key parameters include a maximum R_DS(on) of approximately 0.090 ohms, which contributes to its ability to handle significant power without overheating. The NTB082N65S3F is ideal for applications that require robust performance, such as motor drives, power supplies, and converters. Overall, it represents a reliable choice for engineers seeking efficient, high-voltage MOSFET solutions.
This MOSFET features low gate charge and on-resistance, which enhances its efficiency and reduces power losses during operation. It is built using advanced trench technology, improving its switching characteristics and thermal performance. The device is typically housed in a TO-247 package, facilitating effective heat dissipation.
Key parameters include a maximum R_DS(on) of approximately 0.090 ohms, which contributes to its ability to handle significant power without overheating. The NTB082N65S3F is ideal for applications that require robust performance, such as motor drives, power supplies, and converters. Overall, it represents a reliable choice for engineers seeking efficient, high-voltage MOSFET solutions.
Equivalent
The NTB082N65S3F is a 650V N-channel MOSFET. Equivalent products include:
1. NTP082N65S3F
2. STP08NM65N
3. IRF840
4. FDPF8N65N
Always check datasheets for specific parameters to ensure compatibility, as variations in R_DS(on), V_GS(th), and other characteristics may exist.
1. NTP082N65S3F
2. STP08NM65N
3. IRF840
4. FDPF8N65N
Always check datasheets for specific parameters to ensure compatibility, as variations in R_DS(on), V_GS(th), and other characteristics may exist.
Features
The NTB082N65S3F is a high-performance N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 650V, making it suitable for high-voltage applications.
2. Current Rating: It supports a continuous drain current (I_D) of up to 82A, allowing for substantial load handling.
3. Low R_DS(on): The on-resistance is typically low, which improves efficiency and reduces power loss during operation.
4. Fast Switching Speeds: Optimized for rapid switching, enhancing performance in high-frequency applications.
5. Thermal Resistance: Features a low thermal resistance, aiding in effective heat dissipation.
6. Package Type: Usually housed in a TO-220 or equivalent package, facilitating easy heat sinking and mounting.
These characteristics make the NTB082N65S3F ideal for use in power supplies, converters, and other electronic circuits requiring reliable and efficient power management.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 650V, making it suitable for high-voltage applications.
2. Current Rating: It supports a continuous drain current (I_D) of up to 82A, allowing for substantial load handling.
3. Low R_DS(on): The on-resistance is typically low, which improves efficiency and reduces power loss during operation.
4. Fast Switching Speeds: Optimized for rapid switching, enhancing performance in high-frequency applications.
5. Thermal Resistance: Features a low thermal resistance, aiding in effective heat dissipation.
6. Package Type: Usually housed in a TO-220 or equivalent package, facilitating easy heat sinking and mounting.
These characteristics make the NTB082N65S3F ideal for use in power supplies, converters, and other electronic circuits requiring reliable and efficient power management.
Pinout
The NTB082N65S3F is an N-channel MOSFET designed for high-efficiency applications. It features a TO-220 package with a pin count of 3.
Pin Functions:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate turns the MOSFET on or off.
2. Drain (D): This is the output terminal of the MOSFET where the load is connected. Current flows from the drain to the source when the device is on.
3. Source (S): This terminal is connected to the ground or the lower potential in the circuit. It serves as the return path for current flowing through the MOSFET.
The NTB082N65S3F is known for its low on-resistance and can handle high voltages, making it suitable for applications in power management and motor control.
Pin Functions:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate turns the MOSFET on or off.
2. Drain (D): This is the output terminal of the MOSFET where the load is connected. Current flows from the drain to the source when the device is on.
3. Source (S): This terminal is connected to the ground or the lower potential in the circuit. It serves as the return path for current flowing through the MOSFET.
The NTB082N65S3F is known for its low on-resistance and can handle high voltages, making it suitable for applications in power management and motor control.
Manufacturer
The NTB082N65S3F is manufactured by ON Semiconductor, a global semiconductor company known for its extensive portfolio of products including power management, analog, and digital components. Established in 1960, ON Semiconductor focuses on providing energy-efficient solutions for a wide range of applications, including automotive, industrial, and consumer electronics. The company operates in multiple sectors, emphasizing innovation and sustainability in its product offerings. Its commitment to providing high-performance semiconductor solutions makes it a key player in the electronics industry, catering to the growing demand for efficient and reliable technologies.
Application
The NTB082N65S3F is a high-voltage N-channel MOSFET primarily used in various power electronics applications. Key application areas include:
1. Power Supplies: Efficient switching in DC-DC converters and power management systems.
2. Motor Drives: Used in electric motor control for efficient operation in industrial and automotive applications.
3. Renewable Energy: Utilized in solar inverters and wind turbine converters.
4. Electric Vehicles: Employed in battery management systems and traction inverters.
5. Consumer Electronics: Found in power amplifiers and other high-efficiency devices.
Its high voltage rating and low on-resistance make it suitable for demanding applications.
1. Power Supplies: Efficient switching in DC-DC converters and power management systems.
2. Motor Drives: Used in electric motor control for efficient operation in industrial and automotive applications.
3. Renewable Energy: Utilized in solar inverters and wind turbine converters.
4. Electric Vehicles: Employed in battery management systems and traction inverters.
5. Consumer Electronics: Found in power amplifiers and other high-efficiency devices.
Its high voltage rating and low on-resistance make it suitable for demanding applications.
Package
The NTB082N65S3F is packaged in a TO-247 format, which is commonly used for high-power applications. This package type allows for efficient heat dissipation and easy mounting on heatsinks in electronic circuits.
