仕様
| 属性 | 値 |
| Supplier | NTE Electronics, Inc |
| Package / Case | Bag |
| Part Status | Active |
| Transistor Type | NPN |
| Current - Collector(Ic)(Max) | 500 mA |
| Voltage - Collector Emitter Breakdown(Max) | 40 V |
| Vce Saturation(Max) @ Ib Ic | 1.6V @ 30mA, 300mA |
| Current - Collector Cutoff(Max) | 50nA (ICBO) |
| DC Current Gain(h FE)(Min) @ Ic Vce | 100 @ 150mA, 10V |
| Power - Max | 650 mW |
| Frequency - Transition | 350MHz |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Mounting Type | Through Hole |
