仕様
| 属性 | 値 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Part Status | Active |
| FET Type | N and P-Channel |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 8V |
| Current - Continuous Drain(Id) @ 25°C | 1.3A |
| Rds On(Max) @ Id Vgs | 175mOhm @ 1.2A, 4.5V |
| Vgs(th)(Max) @ Id | 1V @ 250µA |
| Power - Max | 400mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
概要
Description
The NTJD1155LT1G is a dual N-channel MOSFET specifically designed for use in power management applications. Manufactured by ON Semiconductor, it features small signal switching capabilities. This device is housed in a compact SOT-563 package, making it ideal for space-constrained projects.
Key specifications include a maximum drain-source voltage (V_DS) of 20V and a continuous drain current (I_D) of approximately 1.5A per channel. The MOSFET exhibits low on-resistance, enhancing efficiency by minimizing power loss during operation. Its fast switching speed makes it suitable for high-frequency applications.
Common applications for the NTJD1155LT1G include portable electronics, battery-powered devices, and other systems requiring efficient load switching and voltage regulation. It is also appreciated in scenarios where thermal management is crucial, given its low power dissipation. Overall, the NTJD1155LT1G provides a reliable, space-efficient solution for modern electronic designs.
Key specifications include a maximum drain-source voltage (V_DS) of 20V and a continuous drain current (I_D) of approximately 1.5A per channel. The MOSFET exhibits low on-resistance, enhancing efficiency by minimizing power loss during operation. Its fast switching speed makes it suitable for high-frequency applications.
Common applications for the NTJD1155LT1G include portable electronics, battery-powered devices, and other systems requiring efficient load switching and voltage regulation. It is also appreciated in scenarios where thermal management is crucial, given its low power dissipation. Overall, the NTJD1155LT1G provides a reliable, space-efficient solution for modern electronic designs.
Equivalent
The NTJD1155LT1G is a dual N-channel MOSFET. Equivalent or similar products are those with similar specifications, including voltage rating, current capacity, and package type. Some alternatives could include:
1. Vishay Si1902DL
2. Fairchild FDG6319PZ
3. Diodes Inc. DMN61D8LDW
4. Toshiba SSM6K513TU
Always confirm electrical and thermal characteristics from the datasheets to ensure compatibility.
1. Vishay Si1902DL
2. Fairchild FDG6319PZ
3. Diodes Inc. DMN61D8LDW
4. Toshiba SSM6K513TU
Always confirm electrical and thermal characteristics from the datasheets to ensure compatibility.
Features
The NTJD1155LT1G is a dual N-channel MOSFET designed for use in small signal applications. It features:
1. Compact Package: It comes in a compact SOT-563 package which is ideal for space-constrained applications.
2. Low On-Resistance: The device offers low on-resistance, enhancing its efficiency and minimizing power loss.
3. Fast Switching: It supports high-speed switching, which is beneficial for applications requiring quick response times.
4. Low Voltage Operation: Suitable for low voltage applications due to its low threshold voltage.
5. High Power Dissipation: Despite its small size, it can handle a significant amount of power dissipation.
6. ESD Protection: It includes electrostatic discharge protection, which adds to its robustness and reliability.
These features make the NTJD1155LT1G ideal for applications like load switches, battery-powered devices, and portable electronics where efficiency and space are critical.
1. Compact Package: It comes in a compact SOT-563 package which is ideal for space-constrained applications.
2. Low On-Resistance: The device offers low on-resistance, enhancing its efficiency and minimizing power loss.
3. Fast Switching: It supports high-speed switching, which is beneficial for applications requiring quick response times.
4. Low Voltage Operation: Suitable for low voltage applications due to its low threshold voltage.
5. High Power Dissipation: Despite its small size, it can handle a significant amount of power dissipation.
6. ESD Protection: It includes electrostatic discharge protection, which adds to its robustness and reliability.
These features make the NTJD1155LT1G ideal for applications like load switches, battery-powered devices, and portable electronics where efficiency and space are critical.
Pinout
The NTJD1155LT1G is a Dual N-Channel MOSFET device. It comes in a compact SOT-563 package and features a total of 6 pins. The primary function of this MOSFET is to act as a switch or amplifier in electronic circuits, specifically designed for low voltage applications. It is used to control current flow, making it suitable for various switching applications.
In the SOT-563 package, the pins are configured as follows:
- Pins 1, 2, 5, and 6 are the Source and Drain connections for the two separate N-channel MOSFETs within the package.
- Pin 3 and Pin 4 are the Gate connections for each MOSFET, allowing for individual control.
This configuration allows for efficient use in compact circuit designs where space is a constraint. The NTJD1155LT1G is often utilized in mobile devices, battery-powered applications, and other areas where low voltage switching is required.
In the SOT-563 package, the pins are configured as follows:
- Pins 1, 2, 5, and 6 are the Source and Drain connections for the two separate N-channel MOSFETs within the package.
- Pin 3 and Pin 4 are the Gate connections for each MOSFET, allowing for individual control.
This configuration allows for efficient use in compact circuit designs where space is a constraint. The NTJD1155LT1G is often utilized in mobile devices, battery-powered applications, and other areas where low voltage switching is required.
Manufacturer
The NTJD1155LT1G is manufactured by ON Semiconductor, also known as onsemi. Onsemi is a leading global supplier of semiconductor-based solutions. The company focuses on energy-efficient electronics that provide a broad range of applications, including automotive, industrial, cloud power, and Internet of Things (IoT). Onsemi's portfolio includes power and signal management, logic, discrete, and custom devices. Their solutions are designed to help customers reduce global energy use, enable innovative electronics, and improve comfort, performance, and safety.
Application
The NTJD1155LT1G is a dual N-channel MOSFET primarily used in electronic applications requiring efficient voltage regulation and switching. Key application areas include:
1. DC-DC Converters: Used in power management systems for converting DC voltage levels efficiently.
2. Load Switches: Serves as a switch for enabling or disabling power to specific sections of a circuit.
3. Battery Management: Utilized in circuits for battery protection and charge/discharge regulation.
4. Motor Control: Helps in controlling small motors by regulating the voltage and current.
5. Signal Switching: Employed in circuits requiring fast on/off switching capabilities.
These applications benefit from its low on-resistance and small form factor, making it suitable for compact and efficient circuit designs.
1. DC-DC Converters: Used in power management systems for converting DC voltage levels efficiently.
2. Load Switches: Serves as a switch for enabling or disabling power to specific sections of a circuit.
3. Battery Management: Utilized in circuits for battery protection and charge/discharge regulation.
4. Motor Control: Helps in controlling small motors by regulating the voltage and current.
5. Signal Switching: Employed in circuits requiring fast on/off switching capabilities.
These applications benefit from its low on-resistance and small form factor, making it suitable for compact and efficient circuit designs.
Package
The NTJD1155LT1G is a dual N-channel MOSFET and typically comes in a SOT-563 package. This package is a small outline, surface-mount technology ideal for compact electronic applications.
